Vishay ILCT6 Optocoupler, phototransistor output, dual channel Datasheet

ILCT6/ MCT6
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel
Features
•
•
•
•
•
Current Transfer Ratio, 50 % Typical
Leakage Current, 1.0 nA Typical
Two Isolated Channels Per Package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
1
8 E
C
2
7 C
C
3
6 C
A
4
5 E
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
e3
i179016
Pb
Pb-free
can also be used to replace relays and transformers
in many digital interface applications, as well as analog applications such as CRT modulation.
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Order Information
Part
Description
The ILCT6/ MCT6 is a two channel optocoupler for
high density applications. Each channel consists of
an optically coupled pair with a Gallium Arsenide
infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of
electrical isolation between input and output.
The ILCT6/ MCT6 is especially designed for driving
medium-speed logic, where it may be used to eliminate troublesome ground loop and noise problems. It
Remarks
ILCT6
CTR ≥ 20 %, DIP-8
MCT6
CTR ≥ 20 %, DIP-8
ILCT6-X007
CTR ≥ 20 %, SMD-8 (option 7)
ILCT6-X009
CTR ≥ 20 %, SMD-8 (option 9)
MCT6-X007
CTR ≥ 20 %, SMD-8 (option 7)
MCT6-X009
CTR ≥ 20 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
60
mA
IFM
3.0
A
Pdiss
100
mW
1.3
mW/°C
Rated forward current, DC
Peak forward current, DC
Power dissipation
Derate linearly from 25 °C
Document Number 83645
Rev. 1.4, 26-Oct-04
1.0 µs pulse, 300 pps
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ILCT6/ MCT6
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Value
Unit
IC
30
mA
BVCEO
30
V
Pdiss
150
mW
2
mW/°C
Collector current
Collector-emitter breakdown voltage
Power dissipation
Derate linearly from 25 °C
Coupler
Parameter
Test condition
Symbol
Value
Unit
VISO
5300
VRMS
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥
Ω
Isolation test voltage
Isolation resistance
1011
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Total package dissipation
Ptot
Derate linearly from 25 °C
400
mW
5.33
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
10
sec.
Lead soldering time at 260 °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 20 mA
Test condition
Symbol
VF
Min
1.25
1.50
Unit
V
Reverse current
VR = 3.0 V
IR
0.1
10
µA
Junction capacitance
VF = 0 V
Cj
25
pF
Output
Symbol
Min
Typ.
Collector-emitter breakdown
voltage
Parameter
IC = 10 µA, IE = 10 µA
BVCEO
30
65
V
Emitter-collector breakdown
voltage
IC = 10 µA, IE = 10 µA
BVECO
7.0
10
V
Collector-emitter leakage
current
VCE = 10 V
ICEO
1.0
Collector-emitter capacitance
VCE = 0 V
CCE
8.0
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Test condition
Max
100
Unit
nA
pf
Document Number 83645
Rev. 1.4, 26-Oct-04
ILCT6/ MCT6
Vishay Semiconductors
Coupler
Parameter
Test condition
Saturation voltage, collectoremitter
IC = 2.0 mA, IF = 16 mA
Symbol
Min
Typ.
VCEsat
Max
Unit
0.40
V
Capacitance (input-output)
f = 1.0 MHz
0.5
pF
Capacitance between channels
f = 1.0 MHz
0.4
pF
Bandwidth
IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω
150
kHz
CIO
Current Transfer Ratio
Parameter
DC Current Transfer Ratio
Test condition
Symbol
Min
Typ.
IF = 10 mA, VCE = 10 V
CTRDC
20
50
Symbol
Min
Typ.
Max
Unit
%
Switching Characteristics
Parameter
Test condition
IC = 2.0 mA, RE = 100 Ω,
VCE = 10 V
Switching times, output
transistor
ton, toff
Max
Unit
µs
3.0
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.5
1. 3
Ta = –55°C
NCTR - Normalized CTR
VF - Forward Voltage - V
1.4
1.2
Ta = 25°C
1.1
1.0
0.9
Ta = 85°C
0.8
Normalized to:
VCE = 10 V, IF = 10 mA
TA= 25°C
CTRce(sat) VCE = 0.4 V
1.0
0.5
NCTR(SAT)
NCTR
0.0
0.7
.1
1
10
IF - Forward Current - mA
.1
100
iilct6_01
1
10
100
I F - LED Current - mA
iilct6_02
Figure 1. Forward Voltage vs. Forward Current
Document Number 83645
Rev. 1.4, 26-Oct-04
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
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ILCT6/ MCT6
Vishay Semiconductors
35
Normalized to:
VCE = 10 V, IF = 10 mA, TA= 25°C
ˇ
CTRce(sat) VCE = 0.4 V
1.0
ICE - Collector Current - mA
TA= 50°C
0.5
NCTR(SAT)
NCTR
30
25
50°C
20
15
85°C
10
5
0
0.0
.1
1
10
100
0
10
I F - LED Current - mA
iilct6_03
40
30
50
60
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
1.5
10 5
ICEO - Collector-Emitter - nA
NCTR - Normalized CTR
20
IF - LED Current - mA
iilct6_06
Figure 3. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Normalized to:
VCE = 10 V, IF = 10 mA
TA= 25°C
1.0
CTRce(sat) VCE = 0.4 V
TA= 70°C
0.5
NCTR(SAT)
NCTR
10 4
10 3
10 2
.1
1
10
Vce = 10 V
10 1
Typical
10 0
10 -1
10 -2
-20
0.0
100
0
20
40
60
80
100
TA - Ambient Temperature - °C
I F - LED Current - mA
iilct6_04
iilct6_07
Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Normalized to:
V CE = 10 V, I F = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
1.0
TA = 85°C
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
IF - LED Current - mA
tpLH - Propagation Delay µs
1000
1.5
NCTR - Normalized CTR
70°C
25°C
2.5
Ta = 25°C, IF = 10 mA
Vcc = 5 V, Vth = 1.5 V
tpHL
100
2.0
10
1.5
tpLH
1
100
tpHL - Propagation Delay µs
NCTR - Normalized CTR
1.5
1.0
.1
1
10
100
RL - Collector Load Resistor - kΩ
iilct6_05
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED
Current
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iilct6_08
Figure 8. Propagation Delay vs. Collector Load Resistor
Document Number 83645
Rev. 1.4, 26-Oct-04
ILCT6/ MCT6
Vishay Semiconductors
IF
VCC = 5 V
IF = 10 mA
t PHL
VO
VO
tPLH
F = 10 KHz,
DF = 50%
tS
RL = 75 Ω
50%
iilct6_10
iilct6_09
tD
tF
tR
Figure 9. Switching Timing
Figure 10. Switching Schematic
Package Dimensions in Inches (mm)
pin one ID
4
3
2
1
5
6
7
8
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
i178006
Document Number 83645
Rev. 1.4, 26-Oct-04
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
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ILCT6/ MCT6
Vishay Semiconductors
Option 7
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
TYP.
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
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.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18494
Document Number 83645
Rev. 1.4, 26-Oct-04
ILCT6/ MCT6
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83645
Rev. 1.4, 26-Oct-04
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