Infineon IPU60R1K5CE 600v coolmos⪠ce power transistor Datasheet

IPD60R1K5CE,IPU60R1K5CE
MOSFET
600VCoolMOSªCEPowerTransistor
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
IPAK
tab
1
tab
2
1
3
2 3
Drain
Pin 2, Tab
Gate
Pin 1
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1500
mΩ
Id.
5
A
Qg.typ
9.4
nC
ID,pulse
8
A
Eoss@400V
1
µJ
Type/OrderingCode
Package
IPD60R1K5CE
PG-TO 252
IPU60R1K5CE
PG-TO 251
Final Data Sheet
Marking
60S1K5CE
1
RelatedLinks
see Appendix A
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600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
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IPD60R1K5CE,IPU60R1K5CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
5
3.2
A
TC=25°C
TC=100°C
-
8
A
TC=25°C
-
-
26
mJ
ID=0.6A; VDD=50V; see table 11
EAR
-
-
0.09
mJ
ID=0.6A; VDD=50V; see table 11
Avalanche current, repetitive
IAR
-
-
0.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
TO-251, TO252
Ptot
-
-
49
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
3.5
A
TC=25°C
Diode pulse current
IS,pulse
-
-
8
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Maximum diode commutation speed
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-251,TO252
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
2.57
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
1.6mm (0.063 in.) from case for 10s
1)
Limited by Tj max. Maximum duty cycle D=0.50
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
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IPD60R1K5CE,IPU60R1K5CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3.0
3.5
V
VDS=VGS,ID=0.09mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.26
3.28
1.50
-
Ω
VGS=10V,ID=1.1A,Tj=25°C
VGS=10V,ID=1.1A,Tj=150°C
Gate resistance
RG
-
14
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
2.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
200
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
16
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
11
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance,
time related2)
Co(tr)
-
41.3
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
8
-
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2Ω;seetable10
Rise time
tr
-
7
-
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2Ω;seetable10
Turn-off delay time
td(off)
-
40
-
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2Ω;seetable10
Fall time
tf
-
20
-
ns
VDD=400V,VGS=10V,ID=1.4A,
RG=12.2Ω;seetable10
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
1.1
-
nC
VDD=480V,ID=1.4A,VGS=0to10V
Gate to drain charge
Qgd
-
5
-
nC
VDD=480V,ID=1.4A,VGS=0to10V
Gate charge total
Qg
-
9.4
-
nC
VDD=480V,ID=1.4A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=480V,ID=1.4A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)
Final Data Sheet
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IPD60R1K5CE,IPU60R1K5CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=1.4A,Tj=25°C
230
-
ns
VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
-
1.1
-
µC
VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
-
9.8
-
A
VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
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IPD60R1K5CE,IPU60R1K5CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
Diagram2:Safeoperatingarea(NonFullPAK)
101
50
1 µs
45
10 µs
100 µs
40
1 ms
100
35
DC
ID[A]
Ptot[W]
30
25
10-1
20
15
10-2
10
5
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea(NonFullPAK)
Diagram4:Max.transientthermalimpedance(NonFullPAK)
1
101
10
1 µs
10 µs
100 µs
100
0.5
1 ms
100
DC
0.2
ZthJC[K/W]
ID[A]
0.1
10-1
0.05
0.02
10-1
0.01
single pulse
10-2
10-3
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
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IPD60R1K5CE,IPU60R1K5CE
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
9
6
20 V
8
20 V
10 V
5
10 V
7
8V
8V
5
ID[A]
ID[A]
6
7V
4
3
6V
2
5.5 V
7V
3
6V
5.5 V
2
5V
1
5V
1
4
4.5 V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
7.0
4.0
6.5
3.5
6.0
5.5
3.0
5V
4.5
5.5V
6.5 V
6V
2.5
7V
RDS(on)[Ω]
RDS(on)[Ω]
5.0
4.0
3.5
10 V
98%
2.0
typ
1.5
3.0
2.5
1.0
2.0
0.5
1.5
1.0
0
1
2
3
4
5
6
0.0
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=1.1A;VGS=10V
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600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
9
10
9
25 °C
8
8
7
120 V
7
6
480 V
6
VGS[V]
ID[A]
5
150 °C
4
5
4
3
3
2
2
1
0
1
0
2
4
6
8
10
0
12
0
1
2
3
VGS[V]
4
5
6
7
8
9
10
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
30
25 °C
125 °C
25
101
IF[A]
EAS[mJ]
20
100
15
10
5
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=0.6A;VDD=50V
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600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
680
660
103
640
620
C[pF]
VBR(DSS)[V]
Ciss
600
102
580
Coss
10
560
1
540
Crss
520
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
1.5
Eoss[µJ]
1.0
0.5
0.0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
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600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
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600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
6PackageOutlines
*) mold flash not included
DIM
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
e1
N
H
L
L3
L4
F1
F2
F3
F4
F5
F6
MILLIMETERS
MIN
MAX
2.16
2.41
0.00
0.15
0.64
0.89
0.65
1.15
5.00
5.50
0.46
0.60
0.46
0.98
5.97
6.22
5.02
5.84
6.40
6.73
4.70
5.60
2.29 (BSC)
4.57 (BSC)
3
9.40
10.48
1.18
1.70
0.90
1.25
0.51
1.00
10.60
6.40
2.20
5.80
5.76
1.20
INCHES
MIN
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
0.370
0.046
0.035
0.020
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
0.090 (BSC)
0.180 (BSC)
3
0.413
0.067
0.049
0.039
0.417
0.252
0.087
0.228
0.227
0.047
DOCUMENT NO.
Z8B00003328
SCALE
0
2.0
0
2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
01-09-2015
REVISION
05
Figure1OutlinePG-TO252,dimensionsinmm/inches
Final Data Sheet
11
2016-03-31
600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
TO251-3-21/-341/-345
DOCUMENT NO.
Z8B00003330
DIM
A
A1
b
b2
b4
c
c2
D
D1
E
E1
e
e1
N
L
L1
L2
MILLIMETERS
MIN
2.16
0.90
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.70
INCHES
MAX
2.41
1.14
0.89
1.15
5.50
0.60
0.89
6.22
5.77
6.73
5.21
MIN
0.085
0.035
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.185
2.29
4.57
3
8.89
0.85
0.89
MAX
0.095
0.045
0.035
0.045
0.217
0.024
0.035
0.245
0.227
0.265
0.205
0.090
0.180
3
9.65
2.29
1.37
0.350
0.033
0.035
SCALE
0
2.0
0
2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
31-08-2015
0.380
0.090
0.054
REVISION
04
Figure2OutlinePG-TO251,dimensionsinmm/inches
Final Data Sheet
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IPD60R1K5CE,IPU60R1K5CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSTMCEWebpage:www.infineon.com
• IFXCoolMOSTMCEapplicationnote:www.infineon.com
• IFXCoolMOSTMCEsimulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
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600VCoolMOSªCEPowerTransistor
IPD60R1K5CE,IPU60R1K5CE
RevisionHistory
IPD60R1K5CE, IPU60R1K5CE
Revision:2016-03-31
Previous Revision
Date
Subjects (major changes since last revision)
2014-09-25
Release of final version
2015-11-17
Updated to qualified for standard grade & updated package drawing
2016-03-31
Modified Id, Rthjc. Modified SOA, Zthjc curves
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
14
2016-03-31
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