Composite Transistors XN6401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –60 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO –50 V VEBO –7 V IC –100 mA Peak collector current ICP –200 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) ■ Electrical Characteristics Parameter Collector to base voltage 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5O Internal Connection 6 Tr1 1 2 5 4 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Collector cutoff current *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SB709A × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 ICBO VCB = –20V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10V, IC = –2mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = –10V, IC = –2mA 0.5 460 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF 0.99 – 0.3 – 0.5 V Ratio between 2 elements 1 Composite Transistors XN6401 PT — Ta IC — VCE 500 IC — I B –60 –60 400 300 200 100 –250µA –40 –200µA –30 –150µA –20 –100µA –10 0 0 40 80 120 –20 –10 0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 0 –100 Collector to emitter voltage VCE (V) IB — VBE IC — VBE Collector current IC (mA) –200 –150 –100 –25˚C –160 –120 –80 –40 –50 Collector to emitter saturation voltage VCE(sat) (V) 25˚C Ta=75˚C –400 VCE(sat) — IC VCE=–5V –200 –250 –300 –10 VCE=–5V Ta=25˚C –300 –200 Base current IB (µA) –240 –350 IC/IB=10 –3 –1 25˚C Ta=75˚C –25˚C –0.3 –0.1 –0.03 –0.01 –0.003 0 0 –0.4 –0.8 –1.2 0 –1.6 –0.4 –1.2 –1.6 Base to emitter voltage VBE Base to emitter voltage VBE (V) hFE — IC Transition frequency fT (MHz) 500 400 Ta=75˚C 25˚C –25˚C 200 100 140 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 –100 –300 –1000 Cob — VCB VCB=–10V Ta=25˚C 120 100 80 60 40 0 0.1 –10 8 20 –3 –3 Collector current IC (mA) 160 VCE=–10V 0 –1 –0.001 –1 –2.0 (V) fT — I E 600 300 –0.8 Collector output capacitance Cob (pF) 0 Forward current transfer ratio hFE –30 0 160 –400 2 –40 –50µA Ambient temperature Ta (˚C) Base current IB (µA) VCE= – 5V Ta=25˚C –50 Collector current IC (mA) –50 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=–300µA 0.3 1 3 10 30 Emitter current IE (mA) 100 f=1MHz IE=0 Ta=25˚C 7 6 5 4 3 2 1 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to base voltage VCB (V) Composite Transistors XN6401 NF — IE NF — IE 20 6 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 3 2 1 0.1 0.3 1 3 300 200 hfe 10 Emitter current IE (mA) 100 14 12 Parameter h 4 0 0.01 0.03 VCB=–5V Rg=50kΩ Ta=25˚C 16 Noise figure NF (dB) Noise figure NF (dB) 5 18 h Parameter — IE f=100Hz 10 1kHz 8 50 20 10 10kHz 6 5 4 3 2 2 0 0.1 hoe (µS) 30 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10 1 0.1 hie (kΩ) VCE=–5V f=270Hz Ta=25˚C hre (×10–4) 0.2 0.3 0.5 1 2 3 5 10 Emitter current IE (mA) h Parameter — VCE 300 200 hfe IE=2mA f=270Hz Ta=25˚C Parameter h 100 50 30 20 hoe (µS) 10 5 3 hre (×10–4) hie (kΩ) 2 1 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) 3