PHILIPS BCP53-10 Pnp medium power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP51; BCP52; BCP53
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 08
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V)
DESCRIPTION
1
• Medium power (max. 1.3 W).
base
2, 4
collector
3
emitter
APPLICATIONS
• Audio, telephony and automotive applications
• Thick and thin-film circuits.
4
handbook, halfpage
2, 4
DESCRIPTION
1
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BCP51
−
−45
V
BCP52
−
−60
V
BCP53
−
−100
V
BCP51
−
−45
V
BCP52
−
−60
V
BCP53
−
−80
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−1.5
A
IBM
peak base current
Ptot
total power dissipation
Tstg
open collector
−
−0.2
A
−
1.3
W
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
VALUE
note 1
UNIT
95
K/W
14
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
TYP. MAX. UNIT
IE = 0; VCB = −30 V
−
−
−100
nA
IE = 0; VCB = −30 V; Tj = 125 °C
−
−
−10
µA
−
−
−100
nA
IC = −5 mA
40
−
−
IC = −150 mA
63
−
250
IC = −500 mA
25
−
−
BCP53-10
63
−
160
BCP51-16; BCP52-16; BCP53-16
100
−
250
collector cut-off current
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
VCE = −2 V; see Fig.2
hFE
MIN.
DC current gain
IC = 150 mA; VCE = −2 V; see Fig.2
VCEsat
collector-emitter saturation voltage
IC = −500 mA; IB = −50 mA
−
−
−0.5
V
VBE
base-emitter voltage
IC = −500 mA; VCE = −2 V
−
−
−1
V
fT
transition frequency
IC = −10 mA; VCE = −5 V;
f = 100 MHz
−
115
−
MHz
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
MBH730
160
handbook, full pagewidth
VCE = −2 V
hFE
120
80
40
0
−10−1
−1
−10
−102
Fig.2 DC current gain; typical values.
1999 Apr 08
4
−103
IC (mA)
−104
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
1999 Apr 08
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 08
6
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
NOTES
1999 Apr 08
7
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SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 08
Document order number:
9397 750 05533
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