Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 ■ Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1Z (Ta=25˚C) Parameter Symbol Collector cutoff current 3 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 1 0 to 0.1 ● 0.65±0.15 0.8 ● +0.2 ● 2.9 –0.05 ● 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.2 1.1 –0.1 ● 0.4 –0.05 ■ Features +0.25 1.5 –0.05 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 1000 2000 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 0.2 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 120 *h FE V MHz Rank classification Rank R S hFE 400 ~ 800 600 ~ 1200 Marking Symbol 1ZR 1ZS T 1000 ~ 2000 1ZT 1 Transistor 2SD1030 PC — Ta IC — VCE 120 160 120 80 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 40 20 60 80 100 120 140 160 2 4 6 8 10 12 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 6 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 0.8 1.2 250 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 0.3 1 3 1.6 2.0 VCB=10V Ta=25˚C VCE=10V 10 30 Collector current IC (mA) 8 7 0.4 Base to emitter voltage VBE (V) 1800 1200 3 1 0 fT — I E 1500 10 0.3 40 Collector to emitter voltage VCE (V) Forward current transfer ratio hFE 30 0.01 0.1 60 hFE — IC IC/IB=10 0.1 80 0 0 VCE(sat) — IC 100 –25˚C 20 Transition frequency fT (MHz) 40 Ta=75˚C 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 120 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 240 100 200 150 100 50 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100