Transistors 2SB1699 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.5±0.1 1.6±0.2 1.5±0.1 3˚ 0.4±0.04 Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −60 V Emitter-base voltage (Collector open) VEBO −6 V Collector current IC −2 A Peak collector current ICP −4 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 45˚ 0.4 max. Rating 2.6±0.1 Symbol 3 2 0.5±0.08 3˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.4±0.08 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0+0.25 –0.20 ■ Features 2.5±0.1 1.5±0.1 3.0±0.15 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: 3A cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −60 V, IE = 0 Collector-emitter cut-off current (Base open) ICEO VCE = −60 V, IB = 0 Forward current transfer ratio * hFE1 VCE = −4 V, IC = −1 A hFE2 VCE = −4 V, IC = − 0.2 A 60 hFE3 VCE = −4 V, IC = −2 A 30 Collector-emitter saturation voltage * VCE(sat) Conditions Min Typ Max Unit −100 µA −100 µA 250 −60 V 80 IC = −2 A, IB = −250 mA − 0.5 V Turn-on time ton IC = −1 A, IB1 = 0.1 A 0.2 µs Storage time tstg IB2 = − 0.1 A, VCC = −50 V 0.4 µs Fall time tf 0.1 µs Transition frequency fT 180 MHz VCB = −10 V, IE = 50 mA, f = 200 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: April 2004 SJC00304AED 1 2SB1699 IC VCE −1.6 IB = −10 mA −1.4 1 Collector current IC (A) 0.8 −9 mA −7 mA −1 −6 mA 0.2 0 0 20 40 60 0 80 100 120 140 160 −2 0 −4 −6 −8 −1 Ta = 85°C −25°C 25°C −1 −10 −102 0 −12 0 − 0.2 −103 Collector current IC (mA) −104 VCE = −4 V 25°C 200 −25°C 100 50 0 − 0.001 − 0.01 − 0.1 −1 Collector current IC (A) SJC00304AED − 0.6 − 0.8 −1 Cob VCB 250 150 − 0.4 Base-emitter voltage VBE (V) hFE IC Ta = 85°C −10−3 − 0.1 −10 − 0.01 300 IC/IB = 8 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC −10 −10−2 − 0.02 −1 mA Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −10−1 − 0.03 −2 mA − 0.2 25°C − 0.04 −3 mA − 0.4 −25°C Ta = 85°C − 0.05 −4 mA − 0.6 0.4 − 0.07 − 0.06 −5 mA − 0.8 0.6 − 0.08 −8 mA −1.2 VCE = −4 V − 0.09 −10 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (W) Ta = 25°C 2 IC VBE − 0.1 Collector current IC (A) PC Ta 1.2 100 10 f = 1 MHz Ta = 25°C 0 −10 −20 −30 Collector-base voltage VCB (V) −40 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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