Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 ● 1.0±0.1 ● 0.8±0.1 0.2–0.05 ■ Features 0.4 Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 100 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics 1:Base 2:Emitter 3:Collector +0.1 EIAJ:SC–75 SS–Mini Type Package (Ta=25˚C) Parameter Symbol Conditions ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Forward current transfer ratio hFE* VCE = 1V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-on time ton Turn-off time toff Storage time tstg FE 0.2±0.1 Marking symbol : 2Y Collector cutoff current *h 0.15–0.05 Parameter 0 to 0.1 (Ta=25˚C) 0.45±0.1 0.3 ■ Absolute Maximum Ratings 0.75±0.15 2 min typ VCB = 15V, IE = 0 Refer to the measurment circuit 60 max Unit 0.1 µA 0.1 µA 200 0.17 0.25 V 1.0 V 450 2 MHz 6 pF 17 ns 17 ns 10 ns Rank classification Rank Q R hFE 60 ~ 120 90 ~ 200 Marking Symbol 2YQ 2YR 1 Transistor 2SC4691 Switching time measurement circuit ton, toff Test Circuit PC — Ta tstg Test Circuit 0.1µF Vout A Vin=10V 0.1µF 500Ω 50Ω 3.3kΩ Vout 1kΩ 910Ω 220Ω 90Ω Vin=10V 3.3kΩ 50Ω VCC=3V Vbb= –3V Vin VCC=10V 50Ω Vbb=2V 10% Vin 10% 90% Vout 500Ω 0 Vin 10% Vout 10% 90% Vout ton toff Collector power dissipation PC (mW) 0.1µF 150 125 100 75 50 25 0 tstg 0 (Waveform at A) VCE(sat) — IC Ta=25˚C IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 100 IC/IB=10 30 10 3 1 Ta=75˚C 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 Collector to emitter voltage VCE (V) 1 3 300 Ta=75˚C 25˚C –25˚C 0.3 1 3 10 30 Collector current IC (mA) 2 300 Ta=–25˚C 25˚C 75˚C 1 0.3 0.1 0.03 100 1 100 10 30 100 300 1000 Cob — VCB 500 400 300 200 100 0 –1 3 Collector current IC (mA) 6 VCE=10V Ta=25˚C Transition frequency fT (MHz) Forward current transfer ratio hFE 400 100 3 fT — IE VCE=1V 0 0.1 10 600 200 10 0.01 0.3 hFE — IC 500 80 100 120 140 160 30 Collector current IC (mA) 600 60 100 Collector output capacitance Cob (pF) Collector current IC (mA) 100 40 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 120 Collector to emitter saturation voltage VCE(sat) (V) IC — VCE 20 Ambient temperature Ta (˚C) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) 1 3 10 30 100 Collector to base voltage VCB (V)