Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET ■ Features unit: mm ● Avalanche energy capacity guaranteed ● High-speed switching ● No secondary breakdown ● High electrostatic breakdown voltage 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Unit VDSS 400 V VGSS ±20 V DC ID ±0.5 A Pulse IDP ±1 A 0.25 mJ Avalanche energy capacity * Ratings Gate to Source voltage Allowable power TC = 25°C dissipation Ta = 25°C EAS* 10 PD 0.5±0.1 0.75±0.1 Drain to Source breakdown voltage Drain current 1.0±0.1 0.1±0.05 0.93±0.1 0.8max 2.5±0.1 ● High-speed switching (switching power supply) ● For high-frequency power amplification 1.0±0.2 ■ Applications 1.8±0.1 7.3±0.1 0.5±0.1 2.3±0.1 4.6±0.1 1 2 1: Gate 2: Drain 3: Source U Type Package 3 W 1 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 2mH, IL = 0.5A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 320V, VGS = 0 10 µA Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 10V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 0.1A Forward transfer admittance | Yfs | VDS = 10V, ID = 0.1A Diode forward voltage VDSF IDR = 0.1A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss 400 V 1 3 17 100 23 160 V Ω mS −1.5 V 48 pF 10 pF 5 pF Turn-on time (delay time) td(on) 65 ns Rise time tr VDD = 100V, ID = 0.1A 35 ns Fall time tf VGS = 10V, RL = 1Ω 40 ns Turn-off time (delay time) td(off) 70 ns Thermal resistance between channel and case Rth(ch-c) 12.5 °C/W Thermal resistance between channel and atmosphere Rth(ch-a) 125 °C/W 1