Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency power amplification 2.3±0.1 1 Symbol Ratings Unit Collector to base voltage VCBO –27 V Collector to emitter voltage VCEO –18 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –5 A Collector power dissipation (TC=25°C) PC 20 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 3 Unit: mm 6.5±0.2 5.35 4.35 0.75 2.3 2.3 0.6 0.5±0.1 1 Parameter 2 1:Base 2:Collector 3:Emitter U Type Package (Ta=25˚C) Parameter ■ Electrical Characteristics 0.8max 2.3±0.1 4.6±0.1 1.8 ■ Absolute Maximum Ratings 0.5±0.1 0.75±0.1 5.5±0.2 13.3±0.3 ● 1.0±0.1 0.1±0.05 0.93±0.1 6.0 ● Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 2 3 2.3±0.1 ● 2.5±0.1 ■ Features 1.0±0.2 1.8±0.1 7.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –10V, IE = 0 –100 nA Emitter cutoff current IEBO VEB = –5V, IC = 0 –1 µA Collector to emitter voltage VCEO IC = –1mA, IB = 0 –18 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Forward current transfer ratio hFE * VCE = –2V, IC = –2A 90 Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.1A Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz *h FE 625 –1 120 V MHz 85 pF Rank classification Rank P Q R hFE 90 to 135 125 to 205 180 to 625 1 Power Transistors 2SB967 PC — Ta IC — VCE TC=25˚C TC=Ta –5 20 16 12 8 –10 –30mA –25mA –4 –20mA –15mA –3 –10mA –2 –5mA Collector current IC (A) 24 –1 25˚C –8 TC=100˚C –25˚C –6 –4 –2 4 –1mA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –12 0 hFE — IC 30000 3000 –1 1000 TC=100˚C –25˚C – 0.1 – 0.03 25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Cob — VCB IE=0 f=1MHz TC=25˚C 160 120 80 40 –3 –10 –30 TC=100˚C 25˚C 300 –25˚C 100 –100 Collector to base voltage VCB (V) –2.0 VCB=–6V f=200MHz TC=25˚C 200 160 120 80 40 30 10 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) 200 –1.6 fT — IE 10000 –3 –1.2 240 Transition frequency fT (MHz) –10 – 0.8 VCE=–2V Forward current transfer ratio hFE –30 – 0.3 – 0.4 Base to emitter voltage VBE (V) 100000 IC/IB=30 0 –1 –10 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 Collector to emitter saturation voltage VCE(sat) (V) VCE=–2V IB=–40mA –35mA 0 Collector output capacitance Cob (pF) –12 28 0 2 IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 32 –10 1 3 10 30 Emitter current IE (mA) 100