Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 1.0±0.1 0.1±0.05 0.93±0.1 1.0±0.2 2.5±0.1 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 0.8max ■ Applications 1.8±0.1 7.3±0.1 0.5±0.1 0.5±0.1 0.75±0.1 2.3±0.1 4.6±0.1 ■ Absolute Maximum Ratings (TC = 25°C) Ratings Unit Drain to Source breakdown voltage Parameter VDSS 150 V Gate to Source voltage Drain current Symbol VGSS ±20 V DC ID ±6 A Pulse IDP ±12 A EAS* 3.6 mJ Avalanche energy capacity * Allowable power TC = 25°C dissipation Ta = 25°C 20 PD 1 2 1: Gate 2: Drain 3: Source U Type Package 3 Internal Connection D G W 1 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C S L = 0.1mH, IL = 6A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 120V, VGS = 0 10 µA Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 ±10 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 10V, ID = 1mA RDS(on)1 VGS = 10V, ID = 3A RDS(on)2 VGS = 4V, ID = 3A 4.2 Drain to Source ON-resistance Forward transfer admittance | Yfs | VDS = 10V, ID = 3A Diode forward voltage VDSF IDR = 6A, VGS = 0 Input capacitance (Common Source) Ciss 150 V 1 2.5 V 300 450 mΩ 340 510 mΩ −1.6 V S 300 pF 76 pF Reverse transfer capacitance (Common Source) Crss 40 pF Turn-on time ton 80 ns Turn-off time (delay time) td(off) 920 ns Fall time tf 250 ns Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz VDD = 100V, ID = 3A VGS = 10V, RL = 33Ω 1