Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation PD 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0.1 to 0.3 0.4±0.2 0 to 0.1 Gate to Drain voltage +0.1 Unit 0.8 Ratings +0.2 1.1 –0.1 Symbol 3 2 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter 1 0.95 +0.2 2.9 –0.05 ● Low ON-resistance ● Low-noise characteristics 1.9±0.2 ■ Features 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 4L ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol IDSS* Gate to Source leakage current IGSS VGS = −30V, VDS = 0 Gate to Drain voltage VGDS IG = −10µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA Forward transfer admittance | Yfs | VDS = 10V, ID = 1mA, f = 1kHz Drain to Source ON-resistance RDS(on) VDS = 10mV, VGS = 0 Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * Conditions Drain to Source cut-off current VDS = 10V, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz min typ 0.2 max Unit 6 mA −10 nA −65 V −1.5 1.8 2.5 −3.5 V mS 300 Ω 7 pF 1.5 pF IDSS rank classification Runk O P Q R IDSS (mA) 0.2 to 1 0.6 to 1.5 1 to 3 2.5 to 6 Marking Symbol 4LO 4LP 4LQ 4LR 1 Silicon Junction FETs (Small Signal) PD Ta ID VDS 2.5 Ta=25˚C 280 200 160 120 80 2.0 Drain current ID (mA) 2.0 240 VGS=0V 1.5 – 0.1V – 0.2V 1.0 – 0.3V – 0.4V 0.5 Ta=–25˚C 1.5 25˚C 1.0 75˚C 0.5 40 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 | Yfs | VGS 4 3 IDSS=10mA 2 1 Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25˚C – 0.4 0 VDS=10V Ta=25˚C 2.0 IDSS=10mA 1.5 1.0 0.5 Gate to source voltage VGS (V) 0 1 2 3 4 5 0 Ciss, Coss, Crss VDS 0 – 0.8 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Gate to source voltage VGS (V) | Yfs | ID 2.5 –1.2 0 –1.2 6 Drain to source voltage VDS (V) 5 0 –1.6 5 6 Drain current ID (mA) 7 8 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 0 Forward transfer admittance |Yfs| (mS) ID VGS 2.5 Drain current ID (mA) Allowable power dissipation PD (mW) 320 2 2SK1103 10 VGS=0 f=1MHz Ta=25˚C 8 6 Ciss 4 2 Coss Crss 0 1 3 10 30 100 Drain to source voltage VDS (V)