PANASONIC XN4316

Composite Transistors
XN04316 (XN4316)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
3
2
1
0.30+0.10
–0.05
■ Basic Part Number
0.50+0.10
–0.05
• UNR2216 (UN2216) + UNR2116 (UN2116)
Rating
Unit
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
V
IC
100
mA
Collector-base voltage
(Emitter open)
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
300
mW
Collector current
Tr2
Overall
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1.1+0.2
–0.1
Parameter
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
0 to 0.1
Symbol
Collector-base voltage
(Emitter open)
1.1+0.3
–0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
Tr1
2.8+0.2
–0.3
6
5˚
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
5
1.50+0.25
–0.05
4
(0.65)
■ Features
0.16+0.10
–0.06
0.4±0.2
For switching/digital circuits
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 7U
Internal Connection
4
5
Tr2
3
6
Tr1
2
1
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJJ00065BED
1
XN04316
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.01
mA
hFE
VCE = 10 V, IC = 5 mA
460

0.25
V
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
R1
Transition frequency
fT
Typ
Max
V
0.1
160
4.9
−30%
µA
V
0.2
VCB = 10 V, IE = −2 mA, f = 200 MHz
Unit
V
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
Input resistance
Min
4.7
+30%
150
V
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.01
mA
hFE
VCE = −10 V, IC = −5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
R1
Transition frequency
fT
Typ
Unit
V
− 0.1
160
µA
460

− 0.25
V
− 0.2
V
−4.9
−30%
VCB = −10 V, IE = 1 mA, f = 200 MHz
Max
V
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Input resistance
Min
V
4.7
80
+30%
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00065BED
XN04316
Characteristics charts of Tr1
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
100
IC / IB = 10
1
Ta = 75°C
25°C
0.1
25°C
−25°C
200
100
1
10
0
100
1
IO  VIN
104
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
300
−25°C
0.01
0.1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJJ00065BED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
3
XN04316
Characteristics charts of Tr2
IC  VCE
VCE(sat)  IC
− 0.9 mA
− 0.8 mA
−120
Collector current IC (mA)
Ta = 25°C
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
0
−2
0
−4
−6
−8
−10
Collector-emitter voltage VCE
−12
IC / IB = 10
−10
−1
Ta = 75°C
25°C
− 0.1
−1
−10
−104
200
4
3
2
25°C
−25°C
100
0
−1
−100
−10
−100
−1 000
Collector current IC (mA)
VIN  IO
VO = −5 V
Ta = 25°C
−103
−100
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
IO  VIN
−102
−10
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
1
0
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
4
300
Collector current IC (mA)
(V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VCE = −10 V
−25°C
− 0.01
− 0.1
Cob  VCB
6
hFE  IC
400
Forward current transfer ratio hFE
IB = −1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
−100
−160
−1
− 0.4
− 0.6
− 0.8
−1.0
−1.2
Input voltage VIN (V)
SJJ00065BED
−1.4
− 0.01
− 0.1
−1
−10
Output current IO (mA)
−100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP