Transistors 2SB1679 Silicon PNP epitaxial planer type For low-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Large current capacitance • Low collector to emitter saturation voltage • Small type package, allowing downsizing and thinning of the equipment. 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector to base voltage VCBO −15 V Collector to emitter voltage VCEO −10 V Emitter to base voltage VEBO −7 V Peak collector current ICP − 0.5 A Collector current IC −1 A Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 10° 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 3V ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit −100 nA Collector cutoff current ICBO VCB = −10 V, IE = 0 Collector to base voltage VCBO IC = −10 µA, IE = 0 −15 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −10 V Emitter to base voltage VEBO Forward current transfer ratio *1 hFE1 *2 VCE = −2 V, IC = − 0.5 A 130 hFE2 VCE = −2 V, IC = −1 A 60 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency −7 V 350 VCE(sat) IC = − 0.4 A, IB = −8 mA − 0.16 − 0.3 VBE(sat) IC = − 0.4 A, IB = −8 mA − 0.8 −1.2 VCB = −10 V, IE = 50 mA, f = 200 MHz 130 MHz VCB = −10 V, IE = 0, f = 1 MHz 22 pF fT Collector output capacitance IE = −10 µA, IC = 0 Cob V V Note) *1: Pulse measurement *2: Rank classification Rank R S hFE1 130 to 220 180 to 350 1