Diodes DMN32D2LDF Common source dual n-channel Datasheet

DMN32D2LDF
COMMON SOURCE DUAL N-CHANNEL
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
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Mechanical Data
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Common Source Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Small Surface Mount Package
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q 101 Standards for High Reliability
Case: SOT-353
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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G2
G2
SOT-353
S
S
G1
G1
Q1
ESD PROTECTED
D2
Maximum Ratings Q1, Q2
Thermal Characteristics Q1, Q2
Symbol
VDSS
VGSS
ID
Value
30
±10
400
Unit
V
V
mA
PD
RθJA
280
446
mW
°C/W
Tj, TSTG
-55 to +150
°C
@TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics Q1, Q2
@TA = 25°C unless otherwise specified
Characteristic
@ TC = 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
30
⎯
⎯
⎯
V
μA
IGSS
⎯
⎯
⎯
1
±10
±1
VGS(th)
0.6
|Yfs|
VSD
⎯
⎯
⎯
100
0.5
⎯
⎯
⎯
⎯
⎯
⎯
Ciss
Coss
Crss
⎯
⎯
⎯
ton
toff
RDS (ON)
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
D1
Schematic Diagram
@TA = 25°C unless otherwise specified
Characteristic
Switching Time
D2
TOP VIEW
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
D1
BOTTOM VIEW
TOP VIEW
Q2
Turn-on Time
Turn-off Time
μA
1.2
V
2.2
1.5
1.2
Ω
⎯
1.4
mS
V
39
10
3.6
⎯
⎯
⎯
pF
pF
pF
⎯
11
⎯
nS
⎯
51
⎯
nS
Test Condition
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 20mA
VGS = 2.5V, ID = 20mA
VGS = 4.0V, ID = 100mA
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
VDS = 3V, VGS = 0V
f = 1.0MHz
VDD = 5V, ID = 10 mA,
VGS = 0-5V
1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
1 of 4
www.diodes.com
January 2008
© Diodes Incorporated
NEW PRODUCT
DMN32D2LDF
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
2 of 4
www.diodes.com
January 2008
© Diodes Incorporated
DMN32D2LDF
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
VGS = 4V
ID = 100mA
1.4
VGS = 2.5V
ID = 20mA
VGS = 1.8V
ID = 20mA
1.2
1
0.8
0.6
-75
-50 -25
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C°)
Fig. 7 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
50
f = 1 MHz
40
CT, CAPACITANCE (pF)
Ciss
30
20
10
Coss
Crss
0
0
Ordering Information
Part Number
DMN32D2LDF-7
Notes:
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
20
(Note 5)
Case
SOT-353
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information (Note 6)
G2
S
KDV
D2
Notes:
G1
YM
NEW PRODUCT
1.8
KDV = Product Type Marking Code (See Note 6)
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
D1
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
2008
V
Feb
2
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
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Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
January 2008
© Diodes Incorporated
DMN32D2LDF
Package Outline Dimensions
A
NEW PRODUCT
TOP VIEW
B C
H
K
M
J
D
F
L
SOT-353
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
⎯
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
E
Z
E
C
G
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
4 of 4
www.diodes.com
January 2008
© Diodes Incorporated
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