Comchip CURC302-G Smd ultra fast recovery rectifier Datasheet

COMCHIP
SMD Ultra Fast Reco ver y Rect ifier s
SMD Diodes Specialist
CURC301-G Thru. CURC307-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 3.0 Amp
RoHS Device
Features
DO-214AB (SMC)
-Ideal for surface mount applications.
-Easy pick and place.
0.280(7.11)
0.260(6.60)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.245(6.22)
0.220(5.59)
0.124(3.15)
0.108(2.75)
-Fast recovery time: 50~75nS.
-Low leakage current.
Mechanical data
0.320(8.13)
0.305(7.75)
-Case: JEDEC DO-214AB, molded plastic.
0.012(0.31)
0.006(0.15)
0.103(2.62)
0.079(2.00)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Symbol
CURC
301-G
CURC
302-G
CURC
303-G
CURC
304-G
CURC
305-G
CURC
306-G
CURC
307-G
Units
Max. repetitive peak reverse voltage
V RRM
50
100
200
400
600
800
1000
V
Max. DC blocking voltage
V DC
50
100
200
400
600
800
1000
V
Max. RMS voltage
V RMS
35
70
140
280
420
560
700
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
I FSM
100
A
Max. average forward current
IO
3.0
A
Max. instantaneous forward voltage at
3.0A
VF
Reverse recovery time
T rr
Max. DC reverse current at T A =25 OC
rated DC blocking voltage T A =125 OC
IR
5.0
150
RθJL
20
TJ
150
O
C
T STG
-55 to +150
O
C
Parameter
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
1.3
1.0
50
1.7
V
75
nS
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm 2 square land area.
REV:A
Page 1
QW-BU004
Comchip Technology CO., LTD.
COMCHIP
SMD Ultra Fast Reco ver y Rect ifier s
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CURC301-G thru CURC307-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
100
CURC301-G~303-G
F o r w a rd C u rren t (A)
Rever s e C urr e n t (μA )
O
T J =125 C
100
10
T J =25 OC
1
10
CURC304-G
1
CURC305-G~307-G
0.1
O
T J =25 C
Pulse width 300μS
4% duty cycle
0.1
0.01
0
20
40
60
80
100
120
0
140
Fig.3 Junction Capacitance
0.4
0.6
0.8
1.0
1.2
1.4
1.6 1.8
Fig.4 Non-repetitive Forward Surge Current
200
Peak Forward Surge Current ( A)
100
100
J u n c ti o n C apaci t ance (p F )
0.2
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
10
T J =25 OC
f=1MHz
Vsig=50mVp-p
O
T J =25 C
8.3ms single half sine
wave, JEDEC method
80
60
40
20
0
1
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
3.5
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
3.0
2.5
2.0
1.5
Single phase
Half wave 60Hz
1.0
0.5
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
150
175
Ambient Temperature ( OC)
REV:A
Page 2
QW-BU004
Comchip Technology CO., LTD.
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