Cypress CY7C056V 3.3v 16k/32k x 36 flex36â ¢ asynchronous dual-port static ram Datasheet

1
CY7C056V
CY7C057V
PRELIMINARY
3.3V 16K/32K x 36
FLEx36™ Asynchronous Dual-Port Static RAM
• Expandable data bus to 72 bits or more using Master/Slave Chip Select when using more than one device
• On-Chip arbitration logic
• Semaphores included to permit software handshaking
between ports
• INT flag for port-to-port communication
• Byte Select on Left Port
• Bus Matching on Right Port
• Depth Expansion via dual chip enables
• Pin select for Master or Slave
• Commercial and Industrial Temperature Ranges
• Compact package
— 144-Pin TQFP (20 x 20 x 1.4 mm)
Features
• True dual-ported memory cells which allow simultaneous access of the same memory location
• 16K x 36 organization (CY7C056V)
• 32K x 36 organization (CY7C057V)
• 0.25-micron CMOS for optimum speed/power
• High-speed access: 10/12/15/20 ns
• Low operating power
— Active: ICC = 260 mA (typical)
— Standby: ISB3 = 10 µA (typical)
• Fully asynchronous operation
• Automatic power-down
— 172-Ball BGA (1.0 mm pitch) (15 x 15 x .51 mm)
Logic Block Diagram
R/WL
B0–B3
CE0L
CE1L
R/WR
Left
Port
Control
Logic
CEL
OEL
Right
Port
Control
Logic
9
9
9
I/O
Control
I/O18L–I/O 26L
I/O
Control
9
BA
WA
9/18/36
Bus
Match
9
I/OR
9
I/O27L–I/O 35L
14/15
OER
9
I/O9L–I/O17L
[1]
CER
9
I/O0L–I/O8L
A0L–A 13/14L
CE 0R
CE 1R
Address
Decode
BM
SIZE
Address
Decode
True Dual-Ported
RAM Array
14/15
14/15
[1]
A0R–A13/14R
14/15
Interrupt
Semaphore
Arbitration
SEMR
SEML
[2]
[2]
BUSYL
INTL
BUSYR
INTR
M/S
Notes:
1. A0–A13 for 16K; A0–A14 for 32K devices.
2. BUSY is an output in Master mode and an input in Slave mode.
For the most recent information, visit the Cypress web site at www.cypress.com
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
April 27, 2000
PRELIMINARY
CY7C056V
CY7C057V
Each port has independent control pins: Chip Enable (CE)[3],
Read or Write Enable (R/W), and Output Enable (OE). Two
flags are provided on each port (BUSY and INT). BUSY signals that the port is trying to access the same location currently
being accessed by the other port. The Interrupt Flag (INT) permits communication between ports or systems by means of a
mail box. The semaphores are used to pass a flag, or token,
from one port to the other to indicate that a shared resource is
in use. The semaphore logic is comprised of eight shared
latches. Only one side can control the latch (semaphore) at
any time. Control of a semaphore indicates that a shared resource is in use. An automatic Power-Down feature is controlled independently on each port by Chip Select (CE0 and
CE 1) pins.
Functional Description
The CY7C056V and CY7C057V are low-power CMOS 16K
and 32K x 36 dual-port static RAMs. Various arbitration
schemes are included on the devices to handle situations
when multiple processors access the same piece of data. Two
ports are provided, permitting independent, asynchronous access for reads and writes to any location in memory. The devices can be utilized as standalone 36-bit dual-port static
RAMs or multiple devices can be combined in order to function
as a 72-bit or wider master/slave dual-port static RAM. An M/S
pin is provided for implementing 72-bit or wider memory applications without the need for separate master and slave devices or additional discrete logic. Application areas include interprocessor/multiprocessor designs, communications status
buffering, and dual-port video/graphics memory.
The CY7C056V and CY7C057V are available in 144-Pin Thin
Quad Plastic Flatpack (TQFP) and 172-Ball Ball Grid Array
(BGA) packages.
Note:
3. CE is LOW when CE0 ≤ VIL and CE1 ≥ VIH.
2
CY7C056V
CY7C057V
PRELIMINARY
Pin Configurations
144-Pin Thin Quad Flatpack (TQFP)
I/O33L
I/O34L
I/O35L
A0L
A1L
A2L
A3L
A4L
A5L
A6L
A7L
B0
B1
B2
B3
OEL
R/WL
VDD
VSS
VSS
CE0L
CE1L
M/S
SEML
INTL
BUSYL
A8L
A9L
A10L
A11L
A12L
A13L
NC
I/O26L
I/O25L
I/O24L
CY7C056V (16K x 36)
CY7C057V (32K x 36)
108
107
106
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
Notes:
4. This pin is A14L for CY7C057V.
5. This pin is A14R for CY7C057V.
3
I/O5R
I/O6R
I/O7R
I/O8R
VDD
I/O18R
I/O19R
I/O20R
I/O21R
VSS
I/O22R
I/O23R
I/O0L
I/O0R
I/O1R
I/O2R
I/O3R
I/O4R
VSS
I/O5L
VSS
I/O4L
I/O3L
I/O2L
I/O1L
I/O19L
I/O18L
VDD
I/O8L
I/O7L
I/O6L
I/O21L
I/O20L
I/O23L
I/O22L
VSS
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
[4]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
I/O32L
I/O31L
VSS
I/O30L
I/O29L
I/O28L
I/O27L
VDD
I/O17L
I/O16L
I/O15L
I/O14L
VSS
I/O13L
I/O12L
I/O11L
I/O10L
I/O9L
I/O9R
I/O10R
I/O11R
I/O12R
I/O13R
VSS
I/O14R
I/O15R
I/O16R
I/O17R
VDD
I/O27R
I/O28R
I/O29R
I/O30R
VSS
I/O31R
I/O32R
Top View
I/O33R
I/O34R
I/O35R
A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
BM
SIZE
WA
BA
OER
R/WR
VDD
VSS
VDD
CE0R
CE1R
VDD
SEMR
INTR
BUSYR
A8R
A9R
A10R
A11R
A12R
A13R
[5]
NC
I/O26R
I/O25R
I/O24R
CY7C056V
CY7C057V
PRELIMINARY
Pin Configurations (continued)
172-Ball Ball Grid Array (BGA)
Top View
1
2
3
4
5
6
A
I/O32L
I/O30L
NC
VSS
I/O13L
VDD
B
A0L
I/O33L
I/O29
I/O17L
C
NC
A1L
I/O31L
I/O27L
D
A2L
A3L
I/O35L
I/O34L
E
A4L
A5L
NC
B0L
NC
F
VDD
A6L
A7L
B1L
NC
G
OEL
B2L
B3L
H
VSS
R/WL
J
A9L
K
I/O14L I/O12L
NC
7
8
I/O11L I/O11R
I/O9L
I/O9R
9
10
11
12
13
14
VDD
I/O13R
VSS
NC
I/O30R
I/O32R
I/O12R I/O14R I/O17R
I/O29R I/O33R
A0R
I/O27R
I/O31R
A1R
NC
I/O16R I/O28R I/O34R
I/O35R
A3R
A2R
I/O15L I/O10L I/O10R I/O15R
I/O28L I/O16L
VSS
VSS
NC
NC
NC
NC
BM
NC
A5R
A4R
NC
SIZE
A7R
A6R
VDD
CE0L
CE0R
BA
WA
OER
A8L
CE1L
CE1R
A8R
R/WR
VSS
A10L
VSS
M/S
NC
NC
VDD
VDD
A10R
A9R
A11L
A12L
NC
SEML
NC
NC
SEMR
NC
A12R
A11R
L
BUSYL
A13L
INTL
I/O26L
INTR
A13R
BUSYR
M
NC
NC
I/O22L
I/O18L
NC
N
I/O24L
I/O20L
I/O8L
I/O6L
P
I/O23L
I/O21L
NC
VSS
NC
I/O25L I/O19L
NC
VSS
VSS
I/O19R I/O25R I/O26R
I/O7L
I/O2L
I/O2R
I/O7R
NC
I/O18R
I/O22R
[5]
NC
I/O5L
I/O3L
I/O0L
I/O0R
I/3R
I/O5R
I/O6R
I/O8R
I/O20R
I/O24R
I/O4L
VDD
I/O1L
I/O1R
VDD
I/O4R
VSS
NC
I/O21R
I/O23R
[4]
4
NC
CY7C056V
CY7C057V
PRELIMINARY
Selection Guide
CY7C056V
CY7C057V
-10
CY7C056V
CY7C057V
-12
CY7C056V
CY7C057V
-15
CY7C056V
CY7C057V
-20
Maximum Access Time (ns)
10
12
15
20
Typical Operating Current (mA)
260
250
240
230
Typical Standby Current for ISB1 (mA) (Both Ports TTL Level)
60
55
50
45
10 µA
10 µA
10 µA
10 µA
Typical Standby Current for ISB3 (µA) (Both Ports CMOS
Level)
Pin Definitions
Left Port
Right Port
Description
A0L–A13/14L
A0R–A13/14R
Address (A0–A13 for 16K; A0–A14 for 32K devices)
SEML
SEMR
Semaphore Enable
CE0L, CE1L
CE0R, CE1R
Chip Enable (CE is LOW when CE0 ≤ VIL and CE1 ≥ VIH)
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
I/O0L–I/O 35L
I/O0R–I/O 35R
Data Bus Input/Output
OEL
OER
Output Enable
R/WL
R/WR
Read/Write Enable
B0–B3
Byte Select Inputs. Asserting these signals enables read and write operations to the corresponding bytes of the memory array.
BM, SIZE
See Bus Matching for details.
WA, BA
See Bus Matching for details.
M/S
Master or Slave Select
VSS
Ground
VDD
Power
Output Current into Outputs (LOW)............................. 20 mA
Maximum Ratings
Static Discharge Voltage .......................................... >2001V
(Above which the useful life may be impaired. For user guidelines, not tested.)
Latch-Up Current .................................................... >200 mA
Storage Temperature .................................–65°C to +150°C
Operating Range
Ambient Temperature with
Power Applied .............................................–55°C to +125°C
Range
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
Commercial
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to VDD+0.5V
DC Input Voltage...................................–0.5V to VDD+0.5V
Industrial
Ambient
Temperature
VDD
0°C to +70°C
3.3V ± 165 mV
–40°C to +85°C
3.3V ± 165 mV
Shaded areas contain advance information.
[6]
Note:
6. Pulse width < 20 ns.
5
CY7C056V
CY7C057V
PRELIMINARY
Electrical Characteristics Over the Operating Range [7, 8]
VOH
Output HIGH Voltage
(VDD = Min., IOH = –4.0 mA)
VOL
Output LOW Voltage
(VDD = Min., IOL = +4.0 mA)
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IOZ
Output Leakage Current
ICC
Operating Current (VDD =
Max., IOUT = 0 mA) Outputs
Disabled
2.4
2.0
10
Standby Current (Both Ports Com’l.
TTL Level and Deselected) Indust.
f = fMAX
60
ISB2
Standby Current (One Port
TTL Level and Deselected)
f = fMAX
185 250
Com’l.
80
10
250 385
Standby Current (Both Ports Com’l.
CMOS Level and Deselect- Indust.
ed) f =0
0.01
ISB4
Standby Current (One Port
CMOS Level and Deselected) f = fMAX[9]
170 220
Com’l.
1
–10
10
265
385
75
50
70
65
95
180 240
175
230
190
255
0.01
1
0.01
1
160 210
Indust.
Max.
Typ.
Min.
Max.
2.0
360
55
0.4
0.01
1
155
200
170
215
V
V
0.8
240
Indust.
ISB3
Typ.
2.0
–10
V
0.4
0.8
Indust.
ISB1
2.4
0.4
2.0
260 410
-20
2.4
0.8
-10
Min.
Max.
2.4
0.4
Com’l.
-15
Typ.
Min.
Max.
Description
-12
Typ.
Parameter
Min.
-10
Unit
CY7C056V
CY7C057V
–10
230
0.8
V
10
µA
340 mA
mA
45
65
mA
165
210 mA
mA
mA
0.01
1
mA
mA
145
180 mA
mA
Shaded areas contain advance information.
Capacitance[10]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VDD = 3.3V
Max.
Unit
10
pF
10
pF
Notes:
7. Cross Levels are VDD – 0.2V< VZ<0.2V.
8. Deselection for a port occurs if CE0 is HIGH or if CE1 is LOW.
9. fMAX = 1/t RC = All inputs cycling at f = 1/tRC (except Output Enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level
standby ISB3.
10. Tested initially and after any design or process changes that may affect these parameters.
6
CY7C056V
CY7C057V
PRELIMINARY
AC Test Load and Waveforms
3.3V
Z0 = 50Ω
R = 50Ω
OUTPUT
R1 = 590Ω
C
[11]
OUTPUT
VTH = 1.5V
C = 5 pF
(b) Three-State Delay (Load 2)
(a) Normal Load (Load 1)
3.0V
ALL INPUT PULSES
VSS
90%
10%
90%
10%
≤ 3 ns
≤ 3 ns
∆ (ns) for access time
7
6
5
4
3
2
1
20[12] 30
60
80 100
200
Capacitance (pF)
(b) Load Derating Curve
Notes:
11. External AC Test Load Capacitance = 10 pF.
12. (Internal I/O pad Capacitance = 10 pF) + AC Test Load.
7
R2 = 435Ω
CY7C056V
CY7C057V
PRELIMINARY
Switching Characteristics Over the Operating Range[13]
CY7C056V
CY7C057V
-10
Parameter
Description
Min.
-12
Max.
Min.
-15
Max.
Min.
-20
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
10
tOHA
Output Hold From Address
Change
tACE[3, 14]
CE LOW to Data Valid
10
12
15
20
ns
tDOE
OE LOW to Data Valid
6
8
10
12
ns
tLZOE[3, 15, 16, 17]
tHZOE[3, 15, 16, 17]
tLZCE[3, 13, 16, 17]
tHZCE[3, 15, 16, 17]
OE Low to Low Z
tLZBE
Byte Enable to Low Z
tHZBE
Byte Enable to High Z
tPU[3, 17]
tPD[3, 17]
tABE[14]
CE LOW to Power-Up
3
0
3
8
3
3
3
8
0
3
3
10
0
ns
12
10
3
0
ns
ns
12
10
ns
ns
0
10
10
ns
20
3
0
10
3
20
15
3
0
8
CE HIGH to High Z
15
12
3
OE HIGH to High Z
CE LOW to Low Z
12
10
ns
ns
12
0
ns
ns
CE HIGH to Power-Down
10
12
15
20
ns
Byte Enable Access Time
10
12
15
20
ns
Write Cycle
tWC
Write Cycle Time
10
12
15
20
ns
tSCE[3, 14]
CE LOW to Write End
7.5
10
12
15
ns
tAW
Address Valid to Write End
7.5
10
12
15
ns
tHA
Address Hold From Write
End
0
0
0
0
ns
tSA[14]
Address Set-Up to Write
Start
0
0
0
0
ns
tPWE
Write Pulse Width
7.5
10
12
15
ns
tSD
Data Set-Up to Write End
7.5
10
10
15
ns
tHD
Data Hold From Write End
0
0
0
0
ns
tHZWE[16, 17]
tLZWE[16, 17]
tWDD[18]
tDDD[18]
R/W LOW to High Z
R/W HIGH to Low Z
8
10
3
3
10
3
12
3
ns
ns
Write Pulse to Data Delay
20
25
30
45
ns
Write Data Valid to Read
Data Valid
16
20
25
30
ns
Busy Timing[19]
tBLA
BUSY LOW from Address
Match
10
12
15
20
ns
tBHA
BUSY HIGH from Address
Mismatch
10
12
15
20
ns
tBLC
BUSY LOW from CE LOW
10
12
15
20
ns
Notes:
13. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I OI/IOH and 10-pF load capacitance.
14. To access RAM, CE = L and SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire tSCE time.
15. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.
16. Test conditions used are Load 2.
17. This parameter is guaranteed by design, but it is not production tested. For information on port-to-port delay through RAM cells from writing port to reading
port, refer to Read Timing with Busy waveform.
18. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.
19. Test conditions used are Load 1.
8
CY7C056V
CY7C057V
PRELIMINARY
Switching Characteristics Over the Operating Range[13] (continued)
CY7C056V
CY7C057V
-10
Parameter
Busy Timing
Description
Min.
-12
Max.
Min.
-15
Max.
Min.
-20
Max.
Min.
Max.
Unit
20
ns
[19]
tBHC
BUSY HIGH from CE HIGH
10
12
tPS
Port Set-Up for Priority
5
5
5
5
ns
tWB
R/W LOW after BUSY (Slave)
0
0
0
0
ns
tWH
R/W HIGH after BUSY HIGH
(Slave)
8
11
13
15
ns
tBDD[19]
BUSY HIGH to Data Valid
10
15
12
15
20
ns
Interrupt Timing[19]
tINS
INT Set Time
10
12
15
20
ns
tINR
INT Reset Time
10
12
15
20
ns
Semaphore Timing
tSOP
SEM Flag Update Pulse (OE
or SEM)
10
10
10
10
ns
tSWRD
SEM Flag Write to Read
Time
5
5
5
5
ns
tSPS
SEM Flag Contention Window
5
5
5
5
ns
tSAA
SEM Address Access Time
10
12
Data Retention Mode
15
20
ns
Timing
The CY7C056V and CY7C057V are designed with battery
backup in mind. Data retention voltage and supply current are
guaranteed over temperature. The following rules ensure data
retention:
Data Retention Mode
VCC
1. Chip Enable (CE)[3] must be held HIGH during data retention,
within VDD to VDD – 0.2V.
3.15V
VCC > 2.0V
3.15V
VCC to VCC – 0.2V
CE
tRC
V
IH
2. CE must be kept between V DD – 0.2V and 70% of VDD
during the power-up and power-down transitions.
3. The RAM can begin operation >tRC after VDD reaches the
minimum operating voltage (3.15 volts).
Parameter
ICC DR1
Notes:
20. tBDD is a calculated parameter and is the greater of tWDD–tPWE (actual) or tDDD–tSD (actual).
21. CE = VDD, Vin = VSS to VDD, TA = 25°C. This parameter is guaranteed but not tested.
9
Test Conditions[21]
@ VDDDR = 2V
Max.
Unit
50
µA
CY7C056V
CY7C057V
PRELIMINARY
Switching Waveforms
Read Cycle No. 1 (Either Port Address Access)[22, 23, 24]
tRC
ADDRESS
tOHA
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (Either Port CE/OE Access)[22, 25, 26]
tACE
CE0, CE1, B0,B1,
SELECT VALID
B2, B3, WA, BA
tDOE
OE
tHZCE
tHZOE
tLZOE
DATA VALID
DATA OUT
tLZCE
tPU
tPD
I
CURRENT
CC
I
SB
Read Cycle No. 3 (Either Port)[22, 24, 25, 26]
tRC
ADDRESS
tAA
tOHA
B0, B1, B2,
B3, WA, BA
BYTE SELECT VALID
tHZCE
tLZCE
tABE
CE0, CE1
CHIP SELECT VALID
tACE
tHZCE
tLZCE
DATA OUT
Notes:
22. R/W is HIGH for read cycles.
23. Device is continuously selected. CE0 = VIL, CE1=VIH, and B0, B1, B2, B3, WA, BA are valid. This waveform cannot be used for semaphore reads.
24. OE = VIL.
25. Address valid prior to or coinciding with CE0 transition LOW and CE1 transition HIGH.
26. To access RAM, CE0 = VIL, CE1=VIH, B0, B1, B2, B3, WA, BA are valid, and SEM = VIH. To access semaphore, CE0 = VIH, CE1=VIL and SEM = VIL or CE0 and SEM=VIL,
and CE1= B0 = B1 = B2 = B3, =VIH.
10
CY7C056V
CY7C057V
PRELIMINARY
Switching Waveforms (continued)
Write Cycle No. 1: R/W Controlled Timing[27, 28, 29, 30]
tWC
ADDRESS
tHZOE [33]
OE
tAW
[31, 32]
CHIP SELECT VALID
CE0, CE1
tPWE[30]
tSA
tHA
R/W
tHZWE[33]
DATA OUT
tLZWE
NOTE 34
NOTE 34
tSD
tHD
DATA IN
Write Cycle No. 2: CE Controlled Timing[27, 28, 29, 35]
tWC
ADDRESS
tAW
[31, 32]
CHIP SELECT VALID
CE0, CE1
tSA
tSCE
tHA
R/W
tSD
tHD
DATA IN
Notes:
27. R/W must be HIGH during all address transitions.
28. A write occurs during the overlap (tSCE or tPWE) of CE0=VIL and CE1=VIH or SEM=VIL and B0–3 LOW.
29. tHA is measured from the earlier of CE0/CE1 or R/W or (SEM or R/W) going HIGH at the end of Write Cycle.
30. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on
the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tPWE.
31. To access RAM, CE0 = VIL, CE1=SEM = VIH.
32. To access byte B0, CE0 = VIL, B0 = VIL, CE1=SEM = VIH.
To access byte B1, CE0 = VIL , B1 = VIL, CE1=SEM = VIH.
To access byte B2, CE0 = VIL , B2 = VIL, CE1=SEM = VIH.
To access byte B3, CE0 = VIL , B3 = VIL, CE1=SEM = VIH.
33. Transition is measured ±150 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
34. During this period, the I/O pins are in the output state, and input signals must not be applied.
35. If the CE0 LOW and CE1 HIGH or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
11
CY7C056V
CY7C057V
PRELIMINARY
Switching Waveforms (continued)
Semaphore Read After Write Timing, Either Side[36]
tSAA
A 0–A 2
VALID ADRESS
VALID ADRESS
tAW
tACE
tHA
SEM
tOHA
tSCE
tSOP
tSD
I/O 0
DATA IN VALID
tSA
tPWE
DATA OUT VALID
tHD
R/W
tSWRD
tDOE
tSOP
OE
WRITE CYCLE
READ CYCLE
Timing Diagram of Semaphore Contention[37, 38, 39]
A0L –A 2L
MATCH
R/WL
SEM L
tSPS
A 0R –A 2R
MATCH
R/WR
SEMR
Notes:
36. CE0 = HIGH and CE1 = LOW for the duration of the above timing (both write and read cycle).
37. I/O0R = I/O0L = LOW (request semaphore); CE0R = CE0L = HIGH and CE1R = CE1L=LOW.
38. Semaphores are reset (available to both ports) at cycle start.
39. If tSPS is violated, the semaphore will definitely be obtained by one side or the other, but which side will get the semaphore is unpredictable.
12
CY7C056V
CY7C057V
PRELIMINARY
Switching Waveforms (continued)
Timing Diagram of Write with BUSY (M/S=HIGH)[40]
tWC
ADDRESS
MATCH
R
tPWE
R/W
R
tHD
tSD
DATA IN
VALID
R
tPS
ADDRESS
MATCH
L
tBLA
BUSY
tBHA
tBDD
L
tDDD
DATA
VALID
OUTL
tWDD
Write Timing with Busy Input (M/S=LOW)
tPWE
R/W
BUSY
tWB
tWH
Note:
40. CE0L = CE0R = LOW; CE1L = CE1R = HIGH.
13
CY7C056V
CY7C057V
PRELIMINARY
Switching Waveforms (continued)
Busy Timing Diagram No. 1 (CE Arbitration)[41]
CELValid First:
ADDRESS L, R
ADDRESS MATCH
CE0L, CE1L
CHIP SELECT VALID
tPS
CE0R, CE1R
CHIP SELECT VALID
tBLC
tBHC
BUSY R
CER Valid First:
ADDRESS L, R
ADDRESS MATCH
CE0L, CE1L
CHIP SELECT VALID
tPS
CE0R, CE1R
CHIP SELECT VALID
tBLC
tBHC
BUSY L
Busy Timing Diagram No. 2 (Address Arbitration)[41]
Left Address Valid First:
tRC or tWC
ADDRESS
L
ADDRESS MATCH
ADDRESS MISMATCH
tPS
ADDRESS
R
tBLA
BUSY
tBHA
R
Right Address Valid First:
tRC or tWC
ADDRESS
R
ADDRESS MATCH
ADDRESS MISMATCH
tPS
ADDRESS
L
tBLA
BUSY
tBHA
L
Note:
41. If tPS is violated, the busy signal will be asserted on one side or the other, but there is no guarantee to which side BUSY will be asserted.
14
CY7C056V
CY7C057V
PRELIMINARY
Switching Waveforms (continued)
Interrupt Timing Diagrams
Left Side Sets INTR :
ADDRESS
L
tWC
WRITE 3FFF (7FFF for CY7C057V)
tHA [42]
CE0L, CE1L
R/W
CHIP SELECT VALID
L
INT R
tINS [43]
Right Side Clears INT R :
tRC
READ 3FFF
(7FFF for CY7C057V)
ADDRESS
R
CHIP SELECT VALID
CE0R, CE1R
tINR [43]
R/WR
OE R
INT R
Right Side Sets INT L:
tWC
ADDRESSR
WRITE 3FFE (7FFE for CY7C057V)
tHA[42]
CE0R , CE1R
CHIP SELECT VALID
R/W R
INT L
[43]
tINS
Left Side Clears INT L:
tRC
READ 3FFE
(7FFF for CY7C057V)
ADDRESSL
CE0L,CE1L
CHIP SELECT VALID
tINR[43]
R/W L
OE L
INT L
Notes:
42. tHA depends on which enable pin (CE0L/CE1L or R/WL) is deasserted first.
43. tINS or tINR depends on which enable pin (CE0L/CE1L or R/WL) is asserted last.
15
CY7C056V
CY7C057V
PRELIMINARY
port has access. If tPS is violated, one port will definitely gain permission to the location, but it is not predictable which port will get that
permission. BUSY will be asserted tBLA after an address match or
tBLC after CE is taken LOW.
Architecture
The CY7C056V and CY7C057V consist of an array of 16K and
32K words of 36 bits each of dual-port RAM cells, I/O and
address lines, and control signals (CE0/CE1, OE, R/W). These
control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes/reads to the same
location, a BUSY pin is provided on each port. Two Interrupt (INT)
pins can be utilized for port-to-port communication. Two
Semaphore (SEM) control pins are used for allocating shared
resources. With the M/S pin, the devices can function as a
master (BUSY pins are outputs) or as a slave (BUSY pins are
inputs). The devices also have an automatic power-down feature controlled by CE0/CE1. Each port is provided with its own
Output Enable control (OE), which allows data to be read from
the device.
A M/S pin is provided in order to expand the word width by configuring
the device as either a master or a slave. The BUSY output of the
master is connected to the BUSY input of the slave. This will allow the
device to interface to a master device with no external components.
Writing to slave devices must be delayed until after the BUSY input
has settled (tBLC or tBLA), otherwise, the slave chip may begin a write
cycle during a contention situation. When tied HIGH, the M/S pin allows the device to be used as a master and, therefore, the BUSY line
is an output. BUSY can then be used to send the arbitration outcome
to a slave.
Functional Description
Semaphore Operation
Write Operation
The CY7C056V and CY7C057V provide eight semaphore
latches, which are separate from the dual-port memory locations. Semaphores are used to reserve resources that are
shared between the two ports. The state of the semaphore
indicates that a resource is in use. For example, if the left port
wants to request a given resource, it sets a latch by writing a
zero to a semaphore location. The left port then verifies its
success in setting the latch by reading it. After writing to the
semaphore, SEM or OE must be deasserted for tSOP before attempting to read the semaphore. The semaphore value will be available tSWRD + tDOE after the rising edge of the semaphore write. If the
left port was successful (reads a 0), it assumes control of the shared
resource, otherwise (reads a 1) it assumes the right port has control
and continues to poll the semaphore. When the right side has relinquished control of the semaphore (by writing a 1), the left side will
succeed in gaining control of the semaphore. If the left side no longer
requires the semaphore, a one is written to cancel its request.
Master/Slave
Data must be set up for a duration of tSD before the rising edge
of R/W in order to guarantee a valid write. A write operation is controlled by either the R/W pin (see Write Cycle No. 1 waveform) or the
CE0 and CE1 pins (see Write Cycle No. 2 waveform). Required inputs
for non-contention operations are summarized in Table 1.
If a location is being written to by one port and the opposite
port attempts to read that location, a port-to-port flowthrough
delay must occur before the data is read on the output; otherwise the data read is not deterministic. Data will be valid on the
port tDDD after the data is presented on the other port.
Read Operation
When reading the device, the user must assert both the OE
and CE[3] pins. Data will be available tACE after CE or tDOE after OE
is asserted. If the user wishes to access a semaphore flag, then the
SEM pin must be asserted instead of the CE[3] pin, and OE must also
be asserted.
Semaphores are accessed by asserting SEM LOW. The SEM
pin functions as a chip select for the semaphore latches. For normal
semaphore access, CE[3] must remain HIGH during SEM LOW. A
CE active semaphore access is also available. The semaphore may
be accessed through the right port with CE0R/CE1R active by asserting the Bus Match Select (BM) pin LOW and asserting the Bus Size
Select (SIZE) pin HIGH. The semaphore may be accessed through
the left port with CE0L/CE1L active by asserting all B0–3 Byte Select
pins HIGH. A0–2 represents the semaphore address. OE and R/W
are used in the same manner as a normal memory access. When
writing or reading a semaphore, the other address pins have no effect.
Interrupts
The upper two memory locations may be used for message
passing. The highest memory location (3FFF for the
CY7C056V, 7FFF for the CY7C057V) is the mailbox for the
right port and the second-highest memory location (3FFE for
the CY7C056V, 7FFE for the CY7C057V) is the mailbox for the
left port. When one port writes to the other port’s mailbox, an
interrupt is generated to the owner. The interrupt is reset when
the owner reads the contents of the mailbox. The message is
user defined.
When writing to the semaphore, only I/O0 is used. If a zero is
written to the left port of an available semaphore, a 1 will appear at the
same semaphore address on the right port. That semaphore can
now only be modified by the port showing 0 (the left port in this case).
If the left port now relinquishes control by writing a 1 to the semaphore, the semaphore will be set to 1 for both ports. However, if the
right port had requested the semaphore (written a 0) while the left port
had control, the right port would immediately own the semaphore as
soon as the left port released it. Table 3 shows sample semaphore
operations.
Each port can read the other port’s mailbox without resetting
the interrupt. The active state of the busy signal (to a port)
prevents the port from setting the interrupt to the winning port.
Also, an active busy to a port prevents that port from reading
its own mailbox and, thus, resetting the interrupt to it.
If an application does not require message passing, do not
connect the interrupt pin to the processor’s interrupt request
input pin.
The operation of the interrupts and their interaction with Busy
are summarized in Table 2.
When reading a semaphore, data lines 0 through 8 output the
semaphore value. The read value is latched in an output register to prevent the semaphore from changing state during a
write from the other port. If both ports attempt to access the
semaphore within tSPS of each other, the semaphore will definitely
be obtained by one side or the other, but there is no guarantee
which side will control the semaphore.
Busy
The CY7C056V and CY7C057V provide on-chip arbitration to
resolve simultaneous memory location access (contention). If
both ports’ Chip Enables[3] are asserted and an address match
occurs within tPS of each other, the busy logic will determine which
16
CY7C056V
CY7C057V
PRELIMINARY
Table 1. Non-Contending Read/Write[3]
Inputs
Outputs
CE
R/W
OE
B0, B1, B2, B3
SEM
I/O0–I/O35
H
X
X
X
H
High Z
Deselected: Power-Down
X
X
X
All H
H
High Z
Deselected: Power-Down
L
L
X
H/L
H
Data In and High Z
L
L
X
All L
H
Data In
L
H
L
H/L
H
Data Out and High Z
L
H
L
All L
H
Data Out
X
X
H
X
X
High Z
H
H
L
X
L
Data Out
Read Data in Semaphore Flag
X
H
L
All H
L
Data Out
Read Data in Semaphore Flag
H
X
X
L
Data In
Write DIN0 into Semaphore Flag
X
X
All H
L
Data In
Write DIN0 into Semaphore Flag
X
Any L
L
L
X
Operation
Write to Selected Bytes Only
Write to All Bytes
Read Selected Bytes Only
Read All Bytes
Outputs Disabled
Not Allowed
[3, 44]
Table 2. Interrupt Operation Example (assumes BUSYL = BUSYR = HIGH)
Left Port
Function
Right Port
R/WL
CEL
OEL
A0L–13L
INTL
R/WR
CER
OE R
A0R–13R
INTR
Set Right INTR Flag
L
L
X
3FFF
X
X
X
X
X
L[46]
Reset Right INTR Flag
X
X
X
X
X
X
L
L
3FFF
H[45]
Set Left INTL Flag
X
X
X
X
L[45]
L
L
X
3FFE
X
[46]
X
X
X
X
X
Reset Left INTL Flag
X
L
L
3FFE
H
Table 3. Semaphore Operation Example
I/O0–I/O8 Left
I/O0–I/O8 Right
No Action
Function
1
1
Semaphore Free
Left Port Writes 0 to Semaphore
0
1
Left Port Has Semaphore Token
Right Port Writes 0 to
Semaphore
0
1
No Change. Right Side Has No Write Access to
Semaphore
Left Port Writes 1 to Semaphore
1
0
Right Port Obtains Semaphore Token
Left Port Writes 0 to Semaphore
1
0
No Change. Left Port Has No Write Access to Semaphore
Right Port Writes 1 to
Semaphore
0
1
Left Port Obtains Semaphore Token
Left Port Writes 1 to Semaphore
1
1
Semaphore Free
Right Port Writes 0 to
Semaphore
1
0
Right Port Has Semaphore Token
Right Port Writes 1 to
Semaphore
1
1
Semaphore Free
Left Port Writes 0 to Semaphore
0
1
Left Port Has Semaphore Token
Left Port Writes 1 to Semaphore
1
1
Semaphore Free
Notes:
44. A0L–14L and A0R–14R, 7FFF/7FFE for the CY7C057V.
45. If BUSYR=L, then no change.
46. If BUSYL=L, then no change.
17
Status
CY7C056V
CY7C057V
PRELIMINARY
Right Port Configuration [47, 48, 49]
BM
SIZE
Configuration
I/O Pins Used
0
0
x36 (Standard)
I/O0–35
0
1
x36 (CE Active SEM Mode)
I/O0–35
1
0
x18
I/O0–17
1
1
x9
I/O0–8
Right Port Operation
Configuration
WA
BA
Data Accessed[50]
I/O Pins Used
x36
X
X
DQ 0–35
I/O0–35
x18
0
X
DQ 0–17
I/O0–17
x18
1
X
DQ18–35
I/O0–17
x9
0
0
DQ0–8
I/O0–8
x9
0
1
DQ 9–17
I/O0–8
x9
1
0
DQ18–26
I/O0–8
x9
1
1
DQ27–35
I/O0–8
Left Port Operation
Control Pin
Effect
B0
I/O0–8 Byte Control
B1
I/O9–17 Byte Control
B2
I/O18–26 Byte Control
B3
I/O27–35 Byte Control
Notes:
47. BM and SIZE must be configured one clock cycle before operation is guaranteed.
48. In x36 mode WA and BA pins are “Don’t Care.”
49. In x18 mode BA pin is a “Don’t Care.”
50. DQ represents data output of the chip.
18
CY7C056V
CY7C057V
PRELIMINARY
Long-Word (36-bit) Operation
Bus Match Operation
Bus Match Select (BM) and Bus Size Select (SIZE) set to a
logic “0” will enable standard cycle long-word (36-bit) operation. In this mode, the right port’s I/O operates essentially in an
identical fashion as does the left port of the dual-port SRAM.
However no Byte Select control is available. All 36 bits of the
long-word are shifted into and out of the right port’s I/O buffer
stages. All read and write timing parameters may be identical
with respect to the two data ports. When the right port is configured for a long-word size, Word Address (WA), and Byte
Address (BA) pins have no application and their inputs are
“Don’t Care”[51] for the external user.
The right port of the CY7C057V 32Kx36 dual-port SRAM can
be configured in a 36-bit long-word, 18-bit word, or 9-bit byte
format for data I/O. The data lines are divided into four lanes,
each consisting of 9 bits (byte-size data lines).
x36
/
CY7C056V
CY7C057V
16K/32Kx36
Dual Port
9
/
9
/
9
/
9
/
BUS MODE
BA WA
x9, x18, x36
/
Word (18-bit) Operation
Word (18-bit) bus sizing operation is enabled when Bus Match
Select (BM) is set to a logic “1” and the Bus SIze Select (SIZE)
pin is set to a logic “0”. In this mode, 18 bits of data are ported
through I/O 0R–17R. The level applied to the Word Address
(WA) pin during word bus size operation determines whether
the most-significant or least-significant data bits are ported
through the I/O0R–17R pins in an Upper Word/Lower Word select fashion (note that when the right port is configured for word
size operation, the Byte Address pin has no application and its
input is “Don’t Care”[51]).
BM SIZE
The Bus Match Select (BM) pin works with Bus Size Select
(SIZE) to select bus width (long-word, word, or byte) for the
right port of the dual-port device. The data sequencing arrangement is selected using the Word Address (WA) and Byte
Address (BA) input pins. A logic “0” applied to both the Bus
Match Select (BM) pin and to the Bus Size Select (SIZE) pin
will select long-word (36-bit) operation. A logic “1” level applied
to the Bus Match Select (BM) pin will enable either byte or
word bus width operation on the right port I/Os depending on
the logic level applied to the SIZE pin. The level of Bus Match
Select (BM) must be static throughout device operation.
Device operation is accomplished by treating the WA pin as an
additional address input and using standard cycle address and
data setup/hold times. When transferring data in word (18-bit)
bus match format, the unused I/O18R–35R pins are three-stated.
Byte (9-bit) Operation
Normally, the Bus Size Select (SIZE) pin would have no standard-cycle application when BM = LOW and the device is in
long-word (36-bit) operation. A “special” mode has been added however to disable ALL right port I/Os while the chip is
active. This I/O disable mode is implemented when SIZE is
forced to a logic “1” while BM is at a logic “0”. It allows the busmatched port to support a chip enable “Don’t Care” semaphore read/write access similar to that provided on the left port
of the device when all Byte Select (B0–3) control inputs are
deselected.
Byte (9-bit) bus sizing operation is enabled when Bus Match
Select (BM) is set to a logic “1” and the Bus Size Select (SIZE)
pin is set to a logic “1”. In this mode, data is ported through
I/O0R–8R in four groups of 9-bit bytes. A particular 9-bit byte
group is selected according to the levels applied to the Word
Address (WA) and Byte Address (BA) input pins.
The Bus Size Select (SIZE) pin selects either a byte or word
data arrangement on the right port when the Bus Match Select
(BM) pin is HIGH. A logic “1” on the SIZE pin when the BM pin
is HIGH selects a byte bus (9-bit) data arrangement). A logic
“0” on the SIZE pin when the BM pin is HIGH selects a word
bus (18-bit) data arrangement. The level of the Bus Size Select
(SIZE) must also be static throughout normal device operation.
I/Os
Rank
WA
BA
I/O27R–35R
Upper-MSB
1
1
I/O18R–26R
Lower-MSB
1
0
I/O9R–17R
Upper-MSB
0
1
I/O0R–8R
Lower-MSB
0
0
Device operation is accomplished by treating the Word Address (WA) pin and the Byte Address (BA) pins as additional
address inputs having standard cycle address and data setup/hold times. When transferring data in byte (9-bit) bus match
format, the unused I/O 9R–35R pins are three-stated.
Note:
51. Even though a logic level applied to a “Don’t Care” input will not change the logical operation of the dual-port, inputs that are temporarily a “Don’t Care” (along
with unused inputs) must not be allowed to float. They must be forced either HIGH or LOW.
19
CY7C056V
CY7C057V
PRELIMINARY
Ordering Information
Speed
(ns)
Ordering Code
10
CY7C056V–10AC
12
CY7C056V–12AC
15
CY7C056V–15AC
CY7C056V–10BAC
CY7C056V–12BAC
CY7C056V–15AI
20
BB172
A144
BB172
144-Pin Thin Quad Flat Pack
Operating
Range
Commercial
172-Ball Ball Grid Array (BGA)
Commercial
144-Pin Thin Quad Flat Pack
Commercial
172-Ball Ball Grid Array (BGA)
Commercial
A144
144-Pin Thin Quad Flat Pack
Commercial
A144
144-Pin Thin Quad Flat Pack
Industrial
BB172
172-Ball Ball Grid Array (BGA)
Commercial
CY7C056V–15BAI
BB172
172-Ball Ball Grid Array (BGA)
Industrial
CY7C056V–20AC
A144
144-Pin Thin Quad Flat Pack
Commercial
172-Ball Ball Grid Array (BGA)
Commercial
Ordering Code
10
CY7C057V–10AC
12
CY7C057V–12AC
15
CY7C057V–15AC
CY7C057V–10BAC
CY7C057V–12BAC
CY7C057V–15AI
20
A144
Package Type
CY7C056V–15BAC
CY7C056V–20BAC
Speed
(ns)
Package
Name
BB172
Package
Name
A144
BB172
A144
BB172
Package Type
144-Pin Thin Quad Flat Pack
Operating
Range
Commercial
172-Ball Ball Grid Array (BGA)
Commercial
144-Pin Thin Quad Flat Pack
Commercial
172-Ball Ball Grid Array (BGA)
Commercial
A144
144-Pin Thin Quad Flat Pack
Commercial
A144
144-Pin Thin Quad Flat Pack
Industrial
CY7C057V–15BAC
BB172
172-Ball Ball Grid Array (BGA)
Commercial
CY7C057V–15BAI
BB172
172-Ball Ball Grid Array (BGA)
Industrial
CY7C057V–20AC
A144
144-Pin Thin Quad Flat Pack
Commercial
172-Ball Ball Grid Array (BGA)
Commercial
CY7C057V–20BAC
BB172
Shaded areas contain advance information.
Document #: 38–00742–B
20
PRELIMINARY
CY7C056V
CY7C057V
Package Diagrams
144-Pin Plastic Thin Quad Flat Pack (TQFP) A144
51-85047-A
21
CY7C056V
CY7C057V
PRELIMINARY
Package Diagrams (continued)
172-Ball BGA BB172
51-85114
© Cypress Semiconductor Corporation, 2000 The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
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