Renesas HAT2092R Silicon n channel power mos fet high speed power switching Datasheet

HAT2092R
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G0511-0300
(Previous ADE-208-1236A(Z))
Rev.3.00
Jan.13.2005
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
Low drive current
High density mounting
Outline
7 8
D D
SOP-8
8
5
7 6
2
G
3
1 2
5 6
D D
4
G
4
S1
MOS1
S3
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Pch Note3
Ratings
30
±20
11
88
11
2
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Rev.3.00 Jan. 13, 2005 page 1 of 7
Unit
V
V
A
A
A
W
W
°C
°C
HAT2092R
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Rev.3.00 Jan. 13, 2005 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
Min
30
±20
—
—
1.0
—
—
12
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
13
17
20
1400
340
190
22
4
4
15
17
50
Max
—
—
±10
1
2.5
16
25
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
tf
VDF
—
—
9
0.85
—
1.10
trr
—
50
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 5.5 A, VGS = 10 V Note4
ID = 5.5 A, VGS = 4.5 V Note4
ID = 5.5 A, VDS = 10 V Note4
VDS = 10V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 10 V
ID = 11 A
VGS = 10 A, ID = 5.5 A
VDD ≅ 10 V
RL = 1.83 Ω
Rg = 4.7 Ω
IF = 11A, VGS = 0 Note4
IF = 11A, VGS = 0
diF/ dt =50A/µs
HAT2092R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
2.0
ive
Dr
at
er
Op
1
Dr
Op
er
0
50
10
at
ion
100
150
Ambient Temperature
200
Ta (°C)
DC
Op
tio
1
0µ
1m
PW
era
s
s
=1
0m
s
n
(P
W
Operation in
this area is
0.1 limited by RDS(on)
ion
ive
1.0
10
Drain Current
3.0
10 µs
100
ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
2
Channel Dissipation
Pch (W)
4.0
< 1Note
0s 4
)
Ta = 25°C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10 V
Pulse Test
40
3.5 V
30
20
VGS = 3 V
10
0
VDS = 10 V
Pulse Test
4V
2
4
6
Drain to Source Voltage
40
ID (A)
ID (A)
4.5 V
Drain Current
Typical Transfer Characteristics
50
Drain Current
50
0.12
ID = 10 A
0.08
5A
0.04
0
2A
4
8
12
Gate to Source Voltage
Rev.3.00 Jan. 13, 2005 page 3 of 7
16
VGS
20
(V)
Drain to Source On State Resistance
RDS(on) (mΩ)
(V)
VDS(on)
Drain to Source Voltage
0.16
Pulse Test
20
Tc = 75°C
25°C
-25°C
10
0
8
10
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
30
1
2
3
Gate to Source Voltage
4
VGS
5
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
VGS= 4.5 V
10 V
5
2
1
0.1 0.2 0.5 1 2
5 10 20
Drain Current ID (A)
50 100
Static Drain to Source on State Resistance
vs. Temperature
50
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2092R
Pulse Test
40
30
20
ID = 2 A, 5 A
10 A
VGS = 4.5 V
2 A, 5 A, 10 A
10
10 V
0
-40
100
Tc = -25°C
30
10
75°C
25°C
3
1
0.3
0.1
0.1
0
40
80
120
160
Case Temperature Tc (°C)
VDS = 10 V
Pulse Test
0.3
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
50
20
3000
10
0.1 0.2
0.5 1
2
Reverse Drain Current
Ciss
1000
Coss
300
Crss
100
30
di/dt = 50 A/µs
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
10
5 10 20
IDR (A)
0
10
VDD = 25 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
Rev.3.00 Jan. 13, 2005 page 4 of 7
50
4
0
40
VGS (V)
100
Switching Time t (ns)
VDD = 25 V
10 V 8
5V
20
0
16
12
VDS
40
Switching Characteristics
Gate to Source Voltage
Drain to Source Voltage VDS (V)
VGS
40
30
200
20
ID = 11 A
20
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
10
100
Typical Capacitance vs.
Drain to Source Voltage
100
30
30
10
Drain Current ID (A)
Body–Drain Diode Reverse
Recovery Time
50
3
1
td(off)
50
tf
20
tr
td(on)
10
5
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
2
0.1 0.2
0.5 1
2
5 10
Drain Current ID (A)
20
HAT2092R
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
50
10 V
40
VGS = 0
5V
30
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
D=1
1
0.1
0.05
θ ch - f(t) = γs (t) x θ ch - f
θ ch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.01
uls
e
p
ot
PDM
h
1s
0.001
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
100
1000
10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.2
0.1
0.01
0.1
0.05
θ ch - f(t) = γs (t) x θ ch - f
θ ch - f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.001
1s
h
p
ot
uls
e
PDM
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Rev.3.00 Jan. 13, 2005 page 5 of 7
100
1000
10000
HAT2092R
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.3.00 Jan. 13, 2005 page 6 of 7
tr
10%
90%
td(off)
tf
HAT2092R
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
1
1.75 Max
*0.22 ± 0.03
0.20 ± 0.03
4
0.75 Max
+ 0.10
6.10 – 0.30
1.08
*0.42 ± 0.08
0.40 ± 0.06
0.14 – 0.04
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Ordering Information
Part Name
HAT2092R-EL-E
HAT2092RJ-EL-E
Quantity
2500 pcs
2500 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Jan. 13, 2005 page 7 of 7
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