Siemens BAT64-04W Silicon schottky diodes (for low-loss, fast-recovery, meter protection, bias isolation and clamping applications integrated diffused guard ring) Datasheet

BAT 64...W
Silicon Schottky Diodes
3
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
2
1
BAT 64W
BAT 64-04W
BAT 64-05W
VSO05561
BAT 64-06W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BAT 64W
63s
Q62702-A1159
1=A
2 n.c.
3=C
BAT 64-04W
64s
Q62702-A1160
1 = A1
2 = C2
3 = C1/A2
BAT 64-05W
65s
Q62702-A1161
1 = A1
2 = A2
3 = C1/2
BAT 64-06W
66s
Q62702-A1162
1 = C1
2 = C2
3 = A1/2
Package
SOT-323
Maximum Ratings
Parameter
Symbol
Value
Diode reverse voltage
VR
40
V
Forward current
IF
250
mA
Average forward current (50/60Hz, sinus)
IFAV
120
Surge forward current (t< 100µs)
IFSM
800
BAT 64W , TS≤120°C Ptot
250
Total power dissipat. BAT64-04/06W , TS≤111°C Ptot
Total power dissipation BAR 64-05W , T S≤104°C Ptot
250
Junction temperature
Tj
150
Storage temperature
Tstg
Total power dissipation
Semiconductor Group
Semiconductor Group
11
Unit
mW
250
°C
-55...+150
Sep-07-1998
1998-11-01
BAT 64...W
Thermal Resistance
Junction - ambient 1) BAT 64W
RthJA
≤255
Junction - ambient 1) BAT 64-04/06W
RthJA
≤290
Junction - ambient 1) BAT 64-05W
RthJA
≤455
Junction - soldering point BAT 64W
RthJS
≤120
Junction - soldering point BAT 64-04/06W
RthJS
≤155
Junction - soldering point BAT 64-05W
RthJS
≤185
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
2
IR
-
-
200
DC characteristics
Reverse current
µA
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
Forward voltage
mV
VF
I F = 1 mA
-
320
350
I F = 10 mA
-
385
430
I F = 30 mA
-
440
520
I F = 100 mA
-
570
750
-
4
6
AC characteristics
Diode capacitance
CT
pF
VR = 1 V, f = 1 MHz
Semiconductor Group
Semiconductor Group
22
Sep-07-1998
1998-11-01
BAT 64...W
Forward current IF = f (V F)
Reverse current IR = f (VR)
T A = Parameter
TA = Parameter
ΙF
10
mA
2
BAT 64...
EHB00057
ΙR
10 2
µA
BAT 64...
EHB00058
TA = 125 C
10 1
10 1
85 C
TA = -40
25
85
125
10 0
C
C
C
C
10 0
10 -1
25 C
10 -1
10 -2
10 -2
0
0.5
V
10 -3
1
VF
Semiconductor Group
Semiconductor Group
0
10
20
V
30
VR
33
Sep-07-1998
1998-11-01
BAT 64...W
Forward current IF = f (TA*; T S)
*Package mounted on epoxy
BAT 64W
300
mA
TS
TA
IF
200
150
100
50
0
0
20
40
60
80
120 °C
100
150
TA,TS
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load IFmax / I FDC = f (tp)
BAT 64W
BAT 64W
10
3
10 2
IFmax / IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
44
Sep-07-1998
1998-11-01
BAT 64...W
Forward current IF = f (TA*; T S)
* Package mounted on epoxy
BAT 64-04/06W
300
mA
TS
TA
IF
200
150
100
50
0
0
20
40
60
80
120 °C
100
150
TA,TS
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load IFmax / I FDC = f (tp)
BAT 64-04/06
BAT 64-04/06W
10
3
10 2
IFmax / IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
55
Sep-07-1998
1998-11-01
BAT 64...W
Forward current IF = f (TA*; T S)
* Package mounted on epoxy
BAT 64-05W
300
mA
TS
IF
200
TA
150
100
50
0
0
20
40
60
80
120 °C
100
150
TA,TS
Permissible Pulse Load R thJS = f (tp)
Permissible Pulse Load IFmax / I FDC = f (tp)
BAT 64-05W
BAT 64-05W
10
3
10 2
IFmax / IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
66
Sep-07-1998
1998-11-01
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