Dynex DCR820SG64 Phase control thyristor Datasheet

DCR820SG
DCR820SG
Phase Control Thyristor
Supersedes October 2000 version, DS4214-5.1
DS4214-6.0 July 2001
FEATURES
KEY PARAMETERS
■
Double Side Cooling
VDRM
6500V
■
High Surge Capability
IT(AV)
387A
ITSM
6000A
dVdt*
1000V/µs
dI/dt
100A/µs
APPLICATIONS
■
High Power Drives
■
High Voltage Power Supplies
■
DC Motor Control
■
Welding
■
Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR820SG65
DCR820SG64
DCR820SG63
DCR820SG62
DCR820SG61
DCR820SG60
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
6500
6400
6300
6200
6100
6000
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 50mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
Lower voltage grades available.
Outline type code: G.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR820SG62
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR820SG
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise
Symbol
Parameter
Conditions
Max.
Units
387
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
608
A
Continuous (direct) on-state current
-
567
A
260
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
408
A
Continuous (direct) on-state current
-
357
A
Conditions
Max.
Units
310
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
485
A
Continuous (direct) on-state current
-
447
A
204
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
321
A
Continuous (direct) on-state current
-
279
A
IT
Half wave resistive load
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DCR820SG
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
4.8
kA
VR = 50% VRRM - 1/4 sine
115 x 103
A2s
10ms half sine; Tcase = 125oC
6.0
kA
VR = 0
180 x 103
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.032
o
Anode dc
-
0.064
o
Cathode dc
-
0.064
o
Double side
-
0.008
o
Single side
-
0.016
o
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
–55
150
o
Clamping force
10.8
13.2
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 12.0kN
with mounting compound
C/W
C/W
C/W
C
Virtual junction temperature
C
C
kN
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DCR820SG
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
50
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC.
-
1000
V/µs
-
50
A/µs
Rate of rise of on-state current
From 67% VDRM to 1000A,
Gate source 10V, 5Ω
tr ≤ 0.5µs. Tj = 125oC.
Repetitive 50Hz
dI/dt
Non-repetitive
-
100
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.6
V
rT
On-state slope resistance
At Tvj = 125oC
-
3.5
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 20V, 10Ω
Rise time 0.5µs, Tj = 25oC
-
3.3
µs
IL
Latching current
Tj = 25oC, VD = 20V.
-
1
A
IH
Holding current
Tj = 25oC, VD = 5V, IT = 5A, ITM = 500A
30
120
mA
tq
Turn-off time
IT = 500A, tp = 1ms, Tj = 125˚C,
VRM = 100V, dIRR/dt = 10A/µs,
dVDR/dt = 25V/µs to 3000V
500
1200
µs
QS
Stored charge - triangular approximation
through IRR and 25% IRR
IT = 320A, -dIT/dt = 6A/µs
600
1500
µC
Typ.
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
-
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
-
300
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
-
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
-
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
-
0.25
V
VRGM
Peak reverse gate voltage
-
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
-
10
A
PGM
Peak gate power
See Fig.8/9 Gate characteristics curves and table
-
100
W
PG(AV)
Mean gate power
-
5
W
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DCR820SG
CURVES
600
1500
Tj = 125˚C
Tj = 125˚C
500
Instantaneous on-state current, IT - (A)
Instantaneous on-state current, IT - (A)
1250
1000
750
500
400
300
200
100
250
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
7.0
1
1.5
2.5
3
3.5
2.0
Instantaneous on-state voltage, VT - (V)
4
Fig.3 Maximum (limit) on-state characteristics
Where
A = -0.759775
B = 0.639225
C = 0.004376
D = -0.092153
these values are valid for Tj = 125˚C for IT 100A to 1500A
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DCR820SG
800
2000
1800
700
1600
600
Power loss - (W)
Power loss - (W)
1400
1200
1000
800
500
400
300
Conduction angle
Conduction angle
600
180˚
400
200
180˚
120˚
200
120˚
90˚
60˚
30˚
90˚
60˚
100
30˚
15˚
15˚
0
0
0
50
100
150
200
250
300
350
0
400
50
Mean on-state current, IT(AV) - (A)
Fig.4 Sine wave power dissipation curves
100
150
200
Mean on-state current, IT(AV) - (A)
250
Fig.5 Sine wave power dissipation curves
800
2000
1800
700
1600
600
1200
Power loss (W)
Power loss - (W)
1400
1000
800
500
400
300
Conduction angle
D.C.
600
Conduction angle
D.C.
200
180˚
120˚
90˚
180˚
400
120˚
90˚
200
100
60˚
60˚
30˚
30˚
0
0
0
100
400
200
300
500
Mean on-state current, IT(AV) - (A)
Fig.6 Square wave power dissipation curves
600
0
50
100
150
200
250
Mean on-state current, IT(AV) - (A)
300
350
Fig.7 Square wave power dissipation curves
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DCR820SG
10
Upper limit
Lower limit
9
Gate trigger voltage, VGT - (V)
8
7
6
Table gives pulse power PGM in Watts
5
Preferred gate drive area
Tj = -40˚C
4
Tj = 25˚C
3
Tj = 125˚C
2
Pulse Width
µs
100
200
500
1000
10000
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Gate trigger current, IGT - (A)
0.7
0.8
0.9
7
8
9
1.0
Fig.8 Gate characteristics
25
Upper Limit
Lower Limit
5W
10W
20W
50W
100W
Gate trigger voltage, VGT - (V)
20
15
10
5
0
0
1
2
3
4
5
6
Gate trigger current, IGT - (A)
10
Fig.9 Gate characteristics
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DCR820SG
1000
10000
Peak reverse recovery current, IRR - (A)
Total stored charge, QRA3 - (µC)
Conditions:
Tj = 125˚C
IT = 320A
VR = 100V
Max
1000
Min
IT
QRA3
dI/dt
100
0.1
1.0
Conditions:
Tj = 125˚C
IT = 320A
VR = 100V
Max
25% IRR
IRR
10
Min
100
10
0.1
100
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.11 Reverse recovery current
Fig.10 Stored charge
0.1
12.5
7.5
5
0.1
I2t
0.05
2.5
0
1
10
ms
5
1
10
0
50
Cycles at 50Hz
Duration
Fig.12 Surge (non-repetitive) on-state current vs time
(with 50% VRRM @ Tcase = 125˚C)
Thermal impedance - junction to case, Zth(j-c) - (˚C/W)
10
I2t value for fusing - (A2s x 106)
Peak half sinewave on-state current - (kA)
Anode side cooled
Double side
cooled
0.01
0.001
0.001
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
Double side
0.032
0.034
0.044
0.057
0.1
Time - (s)
Single side
0.064
0.066
0.076
0.089
1.0
10
Fig.13 Maximum (limit) transient thermal impedance
- junction to case
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DCR820SG
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Hole Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode
Ø58.5 max
Ø34 nom
27.0
25.4
Ø1.5
Gate
Ø34 nom
Anode
Nominal weight: 250g
Clamping force: 12kN ±10%
Lead lenght: 420mm
Lead terminal connector: M4 ring
Package outline type code: G
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DCR820SG
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4224-6 Issue No. 6.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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