Infineon BCX51-16 Pnp silicon af transistor Datasheet

BCX51...BCX53
PNP Silicon AF Transistors
• For AF driver and output stages
1
• High collector current
2
• Low collector-emitter saturation voltage
3
• Complementary types: BCX54...BCX56 (NPN)
2
VPS05162
Type
Marking
Pin Configuration
BCX51
AA
1=B
2=C
3=E
SOT89
BCX51-10
AC
1=B
2=C
3=E
SOT89
BCX51-16
AD
1=B
2=C
3=E
SOT89
BCX52
AE
1=B
2=C
3=E
SOT89
BCX52-10
AG
1=B
2=C
3=E
SOT89
BCX52-16
AM
1=B
2=C
3=E
SOT89
BCX53
AH
1=B
2=C
3=E
SOT89
BCX53-10
AK
1=B
2=C
3=E
SOT89
BCX53-16
AL
1=B
2=C
3=E
SOT89
1
Package
Feb-10-2004
BCX51...BCX53
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Collector-base voltage
BCX51
Unit
BCX52
BCX53
45
60
80
VCBO
45
60
100
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
Peak collector current
ICM
1.5
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 130 °C
Ptot
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
1
V
A
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
≤20
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Feb-10-2004
BCX51...BCX53
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCX51
45
-
-
BCX52
60
-
-
BCX53
80
-
-
BCX51
45
-
-
BCX52
60
-
-
BCX53
100
-
-
V(BR)EBO
5
-
-
ICBO
-
-
100
nA
ICBO
-
-
20
µA
h FE
25
-
-
BCX51...53
40
-
250
hFE-grp.10
63
100
160
hFE-grp.16
100
160
250
25
-
-
VCEsat
-
-
0.5
VBE(ON)
-
-
1
fT
-
125
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
-
IC = 5 mA, VCE = 2 V
h FE
DC current gain 1)
IC = 150 mA, VCE = 2 V
DC current gain 1)
h FE
IC = 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
AC Characteristics
Transition frequency
MHz
IC = 50 mA, VCE = 10 V, f = 20 MHz
1) Pulse test: t ≤ 300µs, D = 2%
3
Feb-10-2004
BCX51...BCX53
Total power dissipation Ptot = f(TS)
Collector current IC = f (VBE)
VCE = 2V
1.2
10 4
W
EHP00437
mA
1
Ptot
BCX 51...53
ΙC
0.9
10 3
0.8
5
100 ˚C
25 ˚C
-50 ˚C
0.7
0.6
10 2
0.5
5
0.4
1
0.3
10
0.2
5
0.1
0
0
20
40
60
80
120 °C
100
10 0
150
0
0.2
0.4
0.8
0.6
TS
VBE
Permissible pulse load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp)
VCE = 10V
10 3
BCX 51...53
EHP00438
Ptot max
5
Ptot DC
10 3
fT
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
BCX 51...53
EHP00439
MHz
tp
tp
D=
T
1.0 V 1.2
5
10 2
5
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 1
10 0
0
5 10 1
5
10 2
mA
10 3
ΙC
tp
4
Feb-10-2004
BCX51...BCX53
DC current gain hFE = f (I C)
Collector-emitter saturation voltage
VCE = 2V
IC = f (VCEsat), hFE = 10
10 3
BCX 51...53
EHP00440
10
4 BCX 51...53
EHP00441
mA
5
ΙC
h FE
10 2
10
100 ˚C
25 ˚C
3
5
-50 ˚C
100 ˚C
25 ˚C
-50 ˚C
5
10
2
5
10 1
10
5
1
5
10 0
10 0
5 10 2
5 10 1
5 10 3
10
mA 10 4
0
0
0.2
0.4
0.6
ΙC
Base-emitter saturation voltage
VCB = 30V
IC = f (VBEsat), hFE = 10
Ι CB0
BCX 51...53
0.8
VCE sat
Collector cutoff current ICBO = f (TA)
10 4
nA
V
EHP00442
10 4
BCX 51...53
EHP00443
mA
ΙC
max
10 3
10 3
5
5
100 ˚C
25 ˚C
-50 ˚C
10 2
5
10 2
typ
10 1
5
5
10
10 0
1
5
5
10 -1
10 0
0
50
100
˚C
150
0
0.2
0.4
0.6
0.8
1.0 V 1.2
VBE sat
TA
5
Feb-10-2004
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