Renesas ISL6556ACR Optimized multiphase pwm controller with 6-bit dac for vr10.x application Datasheet

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NO RECOMMENDED REPLACEMENT
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ISL6556A
DATASHEET
Optimized Multiphase PWM Controller with 6-Bit DAC for VR10.X Application
The ISL6556A controls microprocessor core voltage
regulation by driving up to 4 synchronous-rectified buck
channels in parallel. Multi-phase buck converter architecture
uses interleaved timing to multiply channel ripple frequency
and reduce input and output ripple currents. Lower ripple
results in fewer components, lower component cost, reduced
power dissipation, and smaller implementation area.
The ISL6556A utilizes rDS(ON) current sensing in each
phase for adaptive voltage positioning (droop), channelcurrent balancing, and overcurrent protection. To ensure
droop accuracy, an external NTC compensation circuit can
be used to completely nullify the effect of temperature
related variation in rDS(ON).
A unity gain, differential amplifier is provided for remote
voltage sensing. Any potential difference between remote
and local grounds can be eliminated using the remote-sense
amplifier. The precision threshold-sensitive enable input is
available to accurately coordinate the start up of the
ISL6556A with Intersil MOSFET driver IC. Dynamic-VID™
technology allows seamless on-the-fly VID changes. The
offset pin allows accurate voltage offset settings that are
independent of VID setting. The ISL6556A uses 5V bias and
has a built-in shunt regulator to allow 12V bias using only a
small external limiting resistor.
TEMP. (°C)
Features
• Precision Multi-Phase Core Voltage Regulation
- Differential Remote Voltage Sensing
- 0.5% System Accuracy Over Temperature and Life
- Adjustable Reference-Voltage Offset
• Precision rDS(ON) Current Sensing
- Accurate Load-Line Programming
- Accurate Channel-Current Balancing
- Low-Cost, Lossless Current Sensing
• Internal Shunt Regulator for 5V or 12V Biasing
• Microprocessor Voltage Identification Input
- Dynamic VID™ Technology
- 6-Bit VID Input
- 0.8375V to 1.600V in 12.5mV Steps
• Threshold Enable Function for Precision Sequencing
• Overcurrent Protection
• Overvoltage Protection
- No Additional External Components Needed
- OVP Pin to drive optional Crowbar Device
• 2, 3, or 4 Phase Operation up to 1.5MHz per Phase
Ordering Information
PART NUMBER*
FN9096
Rev 3.00
December 29, 2004
PACKAGE
PKG. DWG. #
ISL6556ACB
0 to 70
28 Ld SOIC
M28.3
ISL6556ACBZ
(Note)
0 to 70
28 Ld SOIC
(Pb-free)
M28.3
ISL6556ACR
0 to 70
32 Ld 5x5B QFN L32.5x5B
ISL6556ACRZ
(Note)
0 to 70
32 Ld 5x5B QFN L32.5x5B
(Pb-free)
• QFN Package Option
- QFN Compliant to JEDEC PUB95 MO-220 QFN - Quad
Flat No Leads - Product Outline
- QFN Near Chip Scale Package Footprint; Improves
PCB Efficiency, Thinner in Profile
• Pb-free Available (RoHS Compliant)
NOTE: Intersil Pb-free products employ special Pb-free material
sets; molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and compatible
with both SnPb and Pb-free soldering operations. Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C.
*Add “-T” suffix for tape and reel.
FN9096 Rev 3.00
December 29, 2004
Page 1 of 24
ISL6556A
Pinouts
VID3
31
29
28
27
EN
ENLL
GND
FS
OVP
30
28 LEAD SOIC
TOP VIEW
26
VCC
32
PGOOD
VID4
32 LEAD QFN
TOP VIEW
OVP
1
28
FS
25
PGOOD
2
27
EN
VID4
3
26
VCC
VID3
4
25
PWM4
VID2
5
24
ISEN4
VID1
6
23
ISEN2
1
24
PWM4
VID2
2
23
ISEN4
VID1
3
22
ISEN2
VID0
4
21
PWM2
VID12.5
5
20
PWM1
OFS
6
19
ISEN1
DAC
7
18
GND
REF
8
17
ISEN3
FN9096 Rev 3.00
December 29, 2004
16
PWM3
15
GND
14
RGND
13
VSEN
12
VDIFF
11
COMP
10
FB
OFSOUT
9
VID0
7
22
PWM2
VID12.5
8
21
PWM1
OFS
9
20
ISEN1
DAC 10
19
ISEN3
REF 11
18
PWM3
FB 12
17
GND
COMP 13
16
RGND
VDIFF 14
15
VSEN
Page 2 of 24
ISL6556A
ISL6565ACR Block Diagram
OVP
VDIFF PGOOD
RGND
x1
S
OVP
LATCH
VSEN
ENLL
VCC
R
1.24V
POWER-ON
RESET (POR)
EN
Q
THREE-STATE
OVP
SOFT START
AND
FAULT LOGIC
CLOCK AND
SAWTOOTH
GENERATOR

+200mV
OFS
FS
PWM1
PWM

Â
OFFSET
PWM2
PWM
OFSOUT

REF
PWM3
PWM
DAC

VID4
VID3
PWM4
PWM
VID2
DYNAMIC
VID
VID1
D/A
VID0
+
E/A
CHANNEL
CURRENT
BALANCE
VID12.5
CHANNEL
DETECT
COMP
ISEN1
I_TRIP
FB
OC

I_TOT
CHANNEL
SAMPLE
&
HOLD
ISEN2
CURRENT
SENSE
ISEN3
ISEN4
GND
FN9096 Rev 3.00
December 29, 2004
Page 3 of 24
ISL6556A
Typical Application of ISL6556ACB
+12V
VIN
VCC
PVCC
BOOT
UGATE
PHASE
HIP6601B
+5V
LGATE
PWM
FB
COMP VCC
GND
+12V
DAC
VDIFF
NTC
THERMISTOR
VIN
VSEN
REF
RGND
VCC
PGOOD
OVP
PVCC
PHASE
ISEN1
ISL6556ACB
VID4
VID3
PWM1
PWM2
VID2
ISEN2
BOOT
UGATE
HIP6601B
LGATE
PWM
GND
VID1
VID0
PWM3
PWM4
FS
RT
GND
VIN
ISEN3
VID12.5
OFS
+12V
VCC
ISEN4
EN
PVCC
µP
LOAD
BOOT
UGATE
PHASE
HIP6601B
LGATE
PWM
VID_PGOOD
(BUFFERED)
GND
+12V
VIN
VCC
PVCC
BOOT
UGATE
PHASE
HIP6601B
LGATE
PWM
FN9096 Rev 3.00
December 29, 2004
GND
Page 4 of 24
ISL6556A
Typical Application of ISL6556ACR
+12V
VIN
VCC
PVCC
BOOT
UGATE
PHASE
HIP6601B
+5V
LGATE
PWM
FB
COMP VCC
VDIFF
VSEN
GND
NTC
THERMISTOR
+12V
EN
VIN
DAC
RGND
PGOOD
OVP
VCC
REF
PVCC
PHASE
OFSOUT
HIP6601B
ISL6556ACR
VID4
VID3
PWM1
PWM2
VID1
ISEN2
VID0
VID12.5
OFS
FS
GND ENLL
LGATE
ISEN1
VID2
PWM3
BOOT
UGATE
PWM
GND
+12V
VIN
ISEN3
PWM4
VCC
ISEN4
EN
PVCC
RT
µP
LOAD
BOOT
UGATE
PHASE
HIP6601B
LGATE
PWM
VID_PGOOD
GND
+12V
VIN
VCC
PVCC
BOOT
UGATE
PHASE
HIP6601B
LGATE
PWM
FN9096 Rev 3.00
December 29, 2004
GND
Page 5 of 24
ISL6556A
ISL6565ACB Block Diagram
OVP
VDIFF PGOOD
RGND
x1
S
VCC
OVP
LATCH
VSEN
R
1.24V
POWER-ON
RESET (POR)
EN
Q
THREE-STATE
OVP
SOFT START
AND
FAULT LOGIC
CLOCK AND
SAWTOOTH
GENERATOR

+200mV
OFS
FS
PWM1
PWM

OFFSET
PWM2
PWM

REF
PWM3
PWM
DAC

VID4
VID3
PWM4
PWM
VID2
DYNAMIC
VID
VID1
D/A
E/A
VID0
CHANNEL
CURRENT
BALANCE
VID12.5
CHANNEL
DETECT
COMP
ISEN1
I_TRIP
FB
OC

I_TOT
SAMPLE
&
HOLD
CHANNEL
ISEN2
CURRENT
SENSE
ISEN3
ISEN4
GND
FN9096 Rev 3.00
December 29, 2004
Page 6 of 24
ISL6556A
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7V
Input, Output, or I/O Voltage (except OVP) . . GND -0.3V to VCC +0.3V
OVP Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+15V
ESD (Human body model) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>4kV
ESD (Machine model) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>300V
ESD (Charged device model) . . . . . . . . . . . . . . . . . . . . . . . . . .>2kV
Thermal Resistance
JA (°C/W)
JC (°C/W)
SOIC Package (Note 1) . . . . . . . . . . . .
60
N/A
QFN Package (Notes 2, 3). . . . . . . . . .
32
3.5
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Operating Conditions
Supply Voltage, VCC (5V bias mode, Note 4) . . . . . . . . . . +5V ±5%
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 125°C
CAUTION: Stress above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational section of this specification is not implied.
NOTES:
1. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Operating Conditions: VCC = 5V or ICC < 25mA (Note 4), TJ = 0°C to 105°C.
Unless Otherwise Specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Nominal Supply
VCC = 5VDC; EN = 5VDC; RT = 100k
ISEN1 = ISEN2 = ISEN3 = ISEN4 = -70A
-
14
18
mA
Shutdown Supply
VCC = 5VDC; EN = 0VDC; RT = 100k
-
10
14
mA
SHUNT REGULATOR
VCC Voltage
VCC tied to 12VDC through 300 resistor, RT = 100k
5.6
5.9
6.2
V
VCC Sink Current
VCC tied to 12VDC through 300 resistor, RT = 100k
-
-
25
mA
VCC Rising
4.2
4.31
4.50
V
VCC Falling
3.7
3.82
4.00
V
EN Rising
1.22
1.24
1.26
V
Hysteresis
-
100
-
mV
Fault Reset
1.10
1.14
1.18
V
ENLL Input Logic Low Level
-
-
0.4
V
ENLL input Logic High Level
0.8
-
-
V
-
-
1
A
POWER-ON RESET AND ENABLE
POR Threshold
ENABLE Threshold
ENLL Leakage Current
ENLL = 5V
REFERENCE VOLTAGE AND DAC
System Accuracy (VID = 1.2V - 1.6V)
(Note 5)
-0.5
-
0.5
%VID
System Accuracy (VID = 0.8375V - 1.1875V)
(Note 5)
-0.8
-
0.8
%VID
-65
-50
-35
A
VID Input Low Level
-
-
0.4
V
VID Input High Level
0.8
-
-
V
VID Pull Up
DAC Source/Sink Current
VID = 010100
-200
-
200
A
OFSOUT Source/Sink Current
(ISL6556ACR Only)
-50
-
50
A
-50
-
50
A
REF Source/Sink Current
FN9096 Rev 3.00
December 29, 2004
Page 7 of 24
ISL6556A
Electrical Specifications
Operating Conditions: VCC = 5V or ICC < 25mA (Note 4), TJ = 0°C to 105°C.
Unless Otherwise Specified. (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Offset resistor connected to ground
485
500
515
mV
VCC=5.00V, offset resistor connected to VCC
2.91
3.00
3.09
V
RT = 100k
-10
-
10
%
0.08
-
1.5
MHz
Sawtooth Amplitude
-
1.5
-
V
Max Duty Cycle
-
66.7
-
%
PIN-ADJUSTABLE OFFSET
Voltage at OFS pin
OSCILLATOR
Accuracy
Adjustment Range
ERROR AMPLIFIER
Open-Loop Gain
RL = 10k to ground
-
80
-
dB
Open-Loop Bandwidth
CL = 100pF, RL = 10k to ground
-
18
-
MHz
Slew Rate
CL = 100pF
4.5
6.0
7.5
V/s
Maximum Output Voltage
4.0
4.3
-
V
Output High Voltage @ 2mA
3.7
-
-
V
Output Low Voltage @ 2mA
-
-
1.35
V
-
20
-
MHz
REMOTE-SENSE AMPLIFIER
Bandwidth
Output High Current
VSEN - RGND = 2.5V
-500
-
500
A
Output High Current
VSEN - RGND = 0.6
-500
-
500
A
PWM OUTPUT
PWM Output Voltage LOW Threshold
Iload = ±500A
-
-
0.3
V
PWM Output Voltage HIGH Threshold
Iload = ±500A
4.3
-
-
V
ISEN1 = ISEN2 = ISEN3 = ISEN4 = 80A, 0°C to 105°C
74
81
91
A
98
110
122
A
-
-
0.4
V
SENSE CURRENT
Sensed Current Tolerance
Overcurrent Trip Level
POWER GOOD AND PROTECTION MONITORS
PGOOD Low Voltage
IPGOOD = 4mA
Undervoltage Offset From VID
VSEN Falling
72
74
76
%VID
Overvoltage Threshold
Voltage above VID, After Soft Start (Note 6)
180
200
220
mV
-
1.63
-
V
1.7
1.8
1.87
V
VCC  POR Threshold, VSEN Falling
-
0.6
-
V
VCC < POR Threshold
-
1.5
-
V
IOVP = -100mA, VCC = 5V
-
1.9
-
V
1.4
-
-
V
Before Enable
VCC < POR Threshold
Overvoltage Reset Voltage
OVP Drive Voltage
Minimum VCC for OVP
NOTES:
4. When using the internal shunt regulator, VCC is clamped to 6.02V (max). Current must be limited to 25mA or less.
5. These parts are designed and adjusted for accuracy with all errors in the voltage loop included.
6. During soft start, VDAC rises from 0 to VID. The overvoltage trip level is the higher of 1.7V and VDAC + 0.2V.
FN9096 Rev 3.00
December 29, 2004
Page 8 of 24
ISL6556A
Functional Pin Description
FB and COMP
Supplies all the power necessary to operate the chip. The
controller starts to operate when the voltage on this pin
exceeds the rising POR threshold and shuts down when the
voltage on this pin drops below the falling POR threshold.
Connect this pin directly to a +5V supply or through a series
300 resistor to a +12V supply.
Inverting input and output of the error amplifier respectively. FB
is connected to VDIFF through a resistor. A negative current,
proportional to output current is present on the FB pin. A
properly sized resistor between VDIFF and FB sets the load
line (droop). The droop scale factor is set by the ratio of the
ISEN resistors and the lower MOSFET rDS(ON). COMP is tied
back to FB through an external R-C network to compensate
the regulator.
GND
DAC and REF
Bias and reference ground for the IC.
The DAC output pin is the output of the precision internal
DAC reference. The REF input pin is the positive input of the
error amplifier. In typical applications, a 1k, 1% resistor is
used between DAC and REF to generate a precise offset
voltage. This voltage is proportional to the offset current
determined by the offset resistor from OFS to ground or VCC.
A capacitor is used between REF and ground to smooth the
voltage transition during Dynamic VID™ operations.
VCC
EN
This pin is a threshold-sensitive enable input for the controller.
Connecting the 12V supply to EN through an appropriate
resistor divider provides a means to synchronize power-up of
the controller and the MOSFET driver ICs. When EN is driven
above 1.24V, the ISL6556A is active depending on status of
ENLL, the internal POR, and pending fault states. Driving EN
below 1.14V will clear all fault states and prime the ISL6556 to
soft start when re-enabled.
ENLL
This pin is implemented in QFN ISL6556A only. It’s a logiclevel enable input for the controller. When asserted to a logic
high, the ISL6556A is active depending on status of EN, the
internal POR, VID inputs and pending fault states. Deasserting
ENLL will clear all fault states and prime the ISL6556A to soft
start when re-enabled.
FS
A resistor, placed from FS to ground will set the switching
frequency. There is an inverse relationship between the value
of the resistor and the switching frequency. See Figure 13 and
Equation 26.
VID4, VID3, VID2, VID1, VID0, and VID12.5
These are the inputs to the internal DAC that provides the
reference voltage for output regulation. Connect these pins
either to open-drain outputs with or without external pull-up
resistors or to active-pull-up outputs. VID4-VID12.5 have 50A
internal pull-up current sources that diminish to zero as the
voltage rises above the logic-high level. These inputs can be
pulled up as high as VCC plus 0.3V.
VDIFF, VSEN, and RGND
VSEN and RGND form the precision differential remote-sense
amplifier. This amplifier converts the differential voltage of the
remote output to a single-ended voltage referenced to local
ground. VDIFF is the amplifier’s output and the input to the
regulation and protection circuitry. Connect VSEN and RGND
to the sense pins of the remote load.
FN9096 Rev 3.00
December 29, 2004
PWM1, PWM2, PWM3, PWM4
Pulse-width modulation outputs. Connect these pins to the
PWM input pins of the Intersil driver IC. The number of active
channels is determined by the state of PWM3 and PWM4. Tie
PWM3 to VCC to configure for 2-phase operation. Tie PWM4
to VCC to configure for 3-phase operation.
ISEN1, ISEN2, ISEN3, ISEN4
Current sense inputs. The ISEN1, ISEN2, ISEN3, and ISEN4
pins are held to a virtual ground such that a resistor connected
between them and the drain terminal of the associated lower
MOSFET will carry a current proportional to the current flowing
through the related channel. The current is determined by the
negative voltage developed across the lower MOSFET’s
rDS(ON) which is the channel current scaled by the inverse of
the rDS(ON). The current is used as a reference for channel
balancing, protection, and load-line regulation (via the FB pin).
Inactive channels should have their respective current sense
inputs left open.
PGOOD
PGOOD is used as an indication of the end of soft-start per
the microprocessor specification. It is an open-drain logic
output that is low impedance until the soft start is completed. It
will be pulled low again once the undervoltage point is reached.
OFS
The OFS pin provides a means to program a dc current for
generating an offset voltage at the REF input. The offset
current is generated via an external resistor and precision
internal voltage references. The polarity of the offset is
selected by connecting the resistor to GND or VCC. For no
offset, the OFS pin should be left unterminated.
Page 9 of 24
ISL6556A
OFSOUT (ISL6556ACR only)
OFSOUT is the output of the offset-current generating circuit. It
must be connected either to REF (recommended) or FB to
generate a dc offset.
OVP
Overvoltage protection pin. This pin pulls to VCC and is
latched when an overvoltage condition is detected. Connect
this pin to the gate of an SCR or MOSFET tied from VIN or
VOUT to ground to prevent damage to the load. This pin may
be pulled as high as 15V to ground with an external resistor.
However, it is only capable of pulling low when VCC is above
2V.
Operation
Multi-Phase Power Conversion
Microprocessor load current profiles have changed to the point
that the advantages of multi-phase power conversion are
impossible to ignore. The technical challenges associated with
producing a single-phase converter which is both cost-effective
and thermally viable have forced a change to the cost-saving
approach of multi-phase. The ISL6556A controller helps in
simplifying the implementation by integrating vital functions
and requiring minimal output components. The block diagrams
on pages 2 and 3 provide top level views of multi-phase power
conversion using the ISL65556ACB and ISL6556ACR
controllers.
IL1 + IL2 + IL3, 7A/DIV
IL3, 7A/DIV
PWM3, 5V/DIV
IL2, 7A/DIV
PWM2, 5V/DIV
frequency of any one phase. In addition, the peak-to-peak
amplitude of the combined inductor currents is reduced in
proportion to the number of phases (Equations 1 and 2).
Increased ripple frequency and lower ripple amplitude mean
that the designer can use less per-channel inductance and
lower total output capacitance for any performance
specification.
Figure 1 illustrates the multiplicative effect on output ripple
frequency. The three channel currents (IL1, IL2, and IL3)
combine to form the AC ripple current and the DC load current.
The ripple component has three times the ripple frequency of
each individual channel current. Each PWM pulse is terminated
1/3 of a cycle after the PWM pulse of the previous phase. The
peak-to-peak current for each phase is about 7A, and the dc
components of the inductor currents combine to feed the load.
To understand the reduction of ripple current amplitude in the
multi-phase circuit, examine the equation representing an
individual channel’s peak-to-peak inductor current.
 V IN -V OUT  V OUT
I PP = -------------------------------------------------L fS V
(EQ. 1)
IN
In Equation 1, VIN and VOUT are the input and output voltages
respectively, L is the single-channel inductor value, and fS is
the switching frequency.
The output capacitors conduct the ripple component of the
inductor current. In the case of multi-phase converters, the
capacitor current is the sum of the ripple currents from each of
the individual channels. Compare Equation 1 to the expression
for the peak-to-peak current after the summation of N
symmetrically phase-shifted inductor currents in Equation 2.
Peak-to-peak ripple current decreases by an amount
proportional to the number of channels. Output-voltage ripple
is a function of capacitance, capacitor equivalent series
resistance (ESR), and inductor ripple current. Reducing the
inductor ripple current allows the designer to use fewer or less
costly output capacitors.
 V IN -N V OUT  V OUT
I L, PP = -------------------------------------------------------L fS V
(EQ. 2)
IN
IL1, 7A/DIV
PWM1, 5V/DIV
1s/DIV
FIGURE 1. PWM AND INDUCTOR-CURRENT WAVEFORMS
FOR 3-PHASE CONVERTER
Interleaving
The switching of each channel in a multi-phase converter is
timed to be symmetrically out of phase with each of the other
channels. In a 3-phase converter, each channel switches 1/3
cycle after the previous channel and 1/3 cycle before the
following channel. As a result, the three-phase converter has a
combined ripple frequency three times greater than the ripple
FN9096 Rev 3.00
December 29, 2004
Another benefit of interleaving is to reduce input ripple current.
Input capacitance is determined in part by the maximum input
ripple current. Multi-phase topologies can improve overall
system cost and size by lowering input ripple current and
allowing the designer to reduce the cost of input capacitance.
The example in Figure 2 illustrates input currents from a threephase converter combining to reduce the total input ripple
current.
The converter depicted in Figure 2 delivers 36A to a 1.5V load
from a 12V input. The RMS input capacitor current is 5.9A.
Compare this to a single-phase converter also stepping down
12V to 1.5V at 36A. The single-phase converter has 11.9A
RMS input capacitor current. The single-phase converter must
Page 10 of 24
ISL6556A
use an input capacitor bank with twice the RMS current
capacity as the equivalent three-phase converter.
INPUT-CAPACITOR CURRENT, 10A/DIV
CHANNEL
Channel
33
input current
INPUT
CURRENT
10A/DIV
CHANNEL 2
INPUT CURRENT
10A/DIV
CHANNEL 1
INPUT CURRENT
10A/DIV
1s/DIV
FIGURE 2. CHANNEL INPUT CURRENTS AND INPUTCAPACITOR RMS CURRENT FOR 3-PHASE
CONVERTER
Figures 14, 15 and 16 in the section entitled Input Capacitor
Selection can be used to determine the input-capacitor RMS
current based on load current, duty cycle, and the number of
channels. They are provided as aids in determining the optimal
input capacitor solution. Figure 17 shows the single phase
input-capacitor RMS current for comparison.
PWM Operation
The timing of each converter leg is set by the number of active
channels. The default channel setting for the ISL6556A is four.
One switching cycle is defined as the time between PWM1
pulse termination signals. The pulse termination signal is the
internally generated clock signal that triggers the falling edge
of PWM1. The cycle time of the pulse termination signal is the
inverse of the switching frequency set by the resistor between
the FS pin and ground. Each cycle begins when the clock
signal commands the channel-1 PWM output to go low. The
PWM1 transition signals the channel-1 MOSFET driver to turn
off the channel-1 upper MOSFET and turn on the channel-1
synchronous MOSFET. In the default channel configuration,
the PWM2 pulse terminates 1/4 of a cycle after PWM1. The
PWM3 output follows another 1/4 of a cycle after PWM2.
PWM4 terminates another 1/4 of a cycle after PWM3.
If PWM3 is connected to VCC, two channel operation is
selected and the PWM2 pulse terminates 1/2 of a cycle later.
Connecting PWM4 to VCC selects three channel operation
and the pulse-termination times are spaced in 1/3 cycle
increments.
Once a PWM signal transitions low, it is held low for a minimum
of 1/3 cycle. This forced off time is required to ensure an
accurate current sample. Current sensing is described in the
next section. After the forced off time expires, the PWM output
is enabled. The PWM output state is driven by the position of
FN9096 Rev 3.00
December 29, 2004
the error amplifier output signal, VCOMP, minus the current
correction signal relative to the sawtooth ramp as illustrated in
Figure 4. When the modified VCOMP voltage crosses the
sawtooth ramp, the PWM output transitions high. The
MOSFET driver detects the change in state of the PWM signal,
turns off the synchronous MOSFET and turns on the upper
MOSFET. The PWM signal remains high until the pulse
termination signal commands the beginning of the next cycle
by triggering the PWM signal low.
Current Sensing
During the forced off time following a PWM transition low, the
controller senses channel current by sampling the voltage
across the lower MOSFET rDS(ON) (see Figure 3). A groundreferenced operational amplifier, internal to the ISL6556A, is
connected to the PHASE node through a resistor, RISEN. The
voltage across RISEN is equivalent to the voltage drop across
the rDS(ON) of the lower MOSFET while it is conducting. The
resulting current into the ISEN pin is proportional to the channel
current, IL. The ISEN current is sampled and held after sufficient
settling time every switching cycle. The sampled current, In, is
used for channel-current balance, load-line regulation,
overcurrent protection, and module current sharing. From Figure
3, the following equation for In is derived
r DS  ON 
I n = I L ---------------------R ISEN
(EQ. 3)
where IL is the channel current.
If rDS(ON) sensing is not desired, an independent currentsense resistor in series with the lower MOSFET source can
serve as a sense element. The circuitry shown in Figure 3
represents channel n of an N-channel converter. This circuitry
is repeated for each channel in the converter, but may not be
active depending upon the status of the PWM3 and PWM4
pins as described under PWM Operation section.
VIN
I
In
SAMPLE
&
HOLD
r DS  ON 
SEN = I L ------------------------R ISEN
CHANNEL N
UPPER MOSFET
IL
ISEN(n)
+
RISEN
I
r
L DS  ON 
+
CHANNEL N
LOWER MOSFET
ISL6556A INTERNAL CIRCUIT
EXTERNAL CIRCUIT
FIGURE 3. INTERNAL AND EXTERNAL CURRENT-SENSING
CIRCUITRY
Page 11 of 24
ISL6556A
Channel-Current Balance
The sampled current, In, from each active channel is used to
gauge both overall load current and the relative channel
current carried in each leg of the converter. The individual
sample currents are summed and divided by the number of
active channels. The resulting average current, IAVG, provides
a measure of the total load current demand on the converter
and the appropriate level of channel current. Using Figures 3
and 4, the average current is defined as
I1 + I2 +  + IN
I AVG = ---------------------------------------N
I OUT
I AVG = ------------N
(EQ. 4)
r DS  ON 
---------------------R ISEN
where N is the number of active channels and IOUT is the total
load current.
VCOMP
+
+
-
PWM1
SAWTOOTH SIGNAL
f(j)
I4 *
IER
IAVG
-
N

+
I3 *
cool more effectively than the other(s) due to nearby air flow or
heat sinking components. The other channel(s) may have
more difficulty cooling with comparatively less air flow and heat
sinking. The hotter channels may also be located close to other
heat-generating components tending to drive their temperature
even higher. In these cases, the proper selection of the current
sense resistors (RISEN in Figure 3) introduces channel current
unbalance into the system. Increasing the value of RISEN in
the cooler channels and decreasing it in the hotter channels
moves all channels into thermal balance at the expense of
current balance.
Voltage Regulation
The integrating compensation network shown in Figure 5
assures that the steady-state error in the output voltage is
limited only to the error in the reference voltage (output of the
DAC) and offset errors in the OFS current source, remotesense and error amplifiers. Intersil specifies the guaranteed
tolerance of the ISL6556A to include the combined tolerances
of each of these elements.
The output of the error amplifier, VCOMP, is compared to the
sawtooth waveform to generate the PWM signals. The PWM
signals control the timing of the Intersil MOSFET drivers and
regulate the converter output to the specified reference
voltage. The internal and external circuitry that controls voltage
regulation is illustrated in Figure 5.
I2
EXTERNAL CIRCUIT
RC CC
COMP
I1
NOTE: *Channels 3 and 4 are optional.
DAC
FIGURE 4. CHANNEL-1 PWM FUNCTION AND CURRENTBALANCE ADJUSTMENT
The average current is subtracted from the individual channel
sample currents. The resulting error current, IER, is filtered to
modify VCOMP. The modified VCOMP signal is compared to a
sawtooth ramp signal to produce a modified pulse width which
corrects for any unbalance and drives the error current toward
zero. Figure 4 illustrates Intersil’s patented current-balance
method as implemented on channel-1 of a multi-phase
converter.
Two considerations designers face are MOSFET selection and
inductor design. Both are significantly improved when channel
currents track at any load level. The need for complex drive
schemes for multiple MOSFETs, exotic magnetic materials,
and expensive heat sinks is avoided, resulting in a costeffective and easy-to-implement solution relative to singlephase conversion. Channel-current balance insures that the
thermal advantage of multi-phase conversion is realized. Heat
dissipation in multiple channels is spread over a greater area
than can easily be accomplished using the single phase
approach.
In some circumstances, it may be necessary to deliberately
design some channel-current unbalance into the system. In a
highly compact design, one or two channels may be able to
FN9096 Rev 3.00
December 29, 2004
ISL6556A INTERNAL CIRCUIT
RREF
REF
CREF
+
FB
RFB
+
VDROOP
-
VOUT+
VOUT-
-
VCOMP
ERROR AMPLIFIER
IAVG
VDIFF
VSEN
+
RGND
DIFFERENTIAL
REMOTE-SENSE
AMPLIFIER
FIGURE 5. OUTPUT VOLTAGE AND LOAD-LINE
REGULATION WITH OFFSET ADJUSTMENT
The ISL6556A incorporates an internal differential remotesense amplifier in the feedback path. The amplifier removes
the voltage error encountered when measuring the output
voltage relative to the local controller ground reference point
resulting in a more accurate means of sensing output voltage.
Connect the microprocessor sense pins to the non-inverting
Page 12 of 24
ISL6556A
input, VSEN, and inverting input, RGND, of the remote-sense
amplifier. The remote-sense output, VDIFF, is connected to the
inverting input of the error amplifier through an external
resistor.
A digital to analog converter (DAC) generates a reference
voltage based on the state of logic signals at pins VID4 through
VID12.5. The DAC decodes the 6-bit logic signal (VID) into one
of the discrete voltages shown in Table 1. Each VID input offers
a 20A pull-up to an internal 2.5V source for use with opendrain outputs. The pull-up current diminishes to zero above the
logic threshold to protect voltage-sensitive output devices.
External pull-up resistors can augment the pull-up current
sources in case leakage into the driving device is greater than
20A.
TABLE 1. VOLTAGE IDENTIFICATION (VID) CODES
VID4
VID3
VID2
VID1
VID0
VID12.5
VDAC
0
1
0
1
0
0
0.8375V
0
1
0
0
1
1
0.8500V
0
1
0
0
1
0
0.8625V
0
1
0
0
0
1
0.8750V
0
1
0
0
0
0
0.8875V
0
0
1
1
1
1
0.9000V
0
0
1
1
1
0
0.9125V
0
0
1
1
0
1
0.9250V
0
0
1
1
0
0
0.9375V
0
0
1
0
1
1
0.9500V
0
0
1
0
1
0
0.9625V
0
0
1
0
0
1
0.975V0
0
0
1
0
0
0
0.9875V
0
0
0
1
1
1
1.0000V
0
0
0
1
1
0
1.0125V
0
0
0
1
0
1
1.0250v
0
0
0
1
0
0
1.0375V
0
0
0
0
1
1
1.0500V
0
0
0
0
1
0
1.0625V
0
0
0
0
0
1
1.0750V
0
0
0
0
0
0
1.0875V
1
1
1
1
1
1
OFF
1
1
1
1
1
0
OFF
1
1
1
1
0
1
1.1000V
1
1
1
1
0
0
1.1125V
1
1
1
0
1
1
1.1250V
1
1
1
0
1
0
1.1375V
1
1
1
0
0
1
1.1500V
FN9096 Rev 3.00
December 29, 2004
TABLE 1. VOLTAGE IDENTIFICATION (VID) CODES (Continued)
VID4
VID3
VID2
VID1
VID0
VID12.5
VDAC
1
1
1
0
0
0
1.1625V
1
1
0
1
1
1
1.1750V
1
1
0
1
1
0
1.1875V
1
1
0
1
0
1
1.2000V
1
1
0
1
0
0
1.2125V
1
1
0
0
1
1
1.2250V
1
1
0
0
1
0
1.2475V
1
1
0
0
0
1
1.2500V
1
1
0
0
0
0
1.2625V
1
0
1
1
1
1
1.2750V
1
0
1
1
1
0
1.2875V
1
0
1
1
0
1
1.3000V
1
0
1
1
0
0
1.3125V
1
0
1
0
1
1
1.3250V
1
0
1
0
1
0
1.3375V
1
0
1
0
0
1
1.3500V
1
0
1
0
0
0
1.3625V
1
0
0
1
1
1
1.3750V
1
0
0
1
1
0
1.3875V
1
0
0
1
0
1
1.4000V
1
0
0
1
0
0
1.4125V
1
0
0
0
1
1
1.4250V
1
0
0
0
1
0
1.4375V
1
0
0
0
0
1
1.4500V
1
0
0
0
0
0
1.4625V
0
1
1
1
1
1
1.4750V
0
1
1
1
1
0
1.4875V
0
1
1
1
0
1
1.5000V
0
1
1
1
0
0
1.5125V
0
1
1
0
1
1
1.5250V
0
1
1
0
1
0
1.5375V
0
1
1
0
0
1
1.5500V
0
1
1
0
0
0
1.5625V
0
1
0
1
1
1
1.5750V
0
1
0
1
1
0
1.5875V
0
1
0
1
0
1
1.600V
Page 13 of 24
ISL6556A
For Negative Offset (connect ROFS to GND):
Load-Line Regulation
Some microprocessor manufacturers require a preciselycontrolled output resistance. This dependence of output
voltage on load current is often termed “droop” or “load line”
regulation. By adding a well controlled output impedance, the
output voltage can be level in the direction that works to control
the voltage spike coincident with fast load current demand
changes.
0.5  R REF
R OFS = -----------------------------V OFFSET
The magnitude of the spike is dictated by the ESR and ESL of
the output capacitors selected. By positioning the no-load
voltage level near the upper specification limit, a larger
negative spike can be sustained without crossing the lower
limit. By adding a well controlled output impedance, the output
voltage under load can effectively be level shifted down so that
a larger positive spike can be sustained without crossing the
upper specification limit.
DAC
As shown in Figure 5, a current proportional to the average
current in all active channels, IAVG, flows from FB through a
load-line regulation resistor, RFB. The resulting voltage drop
across RFB is proportional to the output current, effectively
creating an output voltage droop with a steady-state value
defined as:
V DROOP = I AVG R FB
(EQ. 5)
In most cases, each channel uses the same RISEN value to
sense current. A more complete expression for VDROOP is
derived by combining Equations 4 and 5.
I OUT r DS  ON 
V DROOP = ---------------------------------- R FB
N
R ISEN
(EQ. 8)
FB
DYNAMIC
VID D/A
RREF
E/A
REF
VCC
or
GND
-
ROFS
+
+
OFS
-
ISL6556ACB
2.0V
0.5V
GND
VCC
FIGURE 6. OUTPUT VOLTAGE OFFSET PROGRAMMING
WITH ISL6556ACB (28-LEAD SOIC)
(EQ. 6)
FB
Output-Voltage Offset Programming
The ISL6556A allows the designer to accurately adjust the
offset voltage. When a resistor, ROFS, is connected between
OFS and VCC, the voltage across it is regulated to 2.0V. This
causes a proportional current (IOFS) to flow into OFS. If ROFS
is connected to ground, the voltage across it is regulated to
0.5V, and IOFS flows out of OFS. A resistor between DAC and
REF, RREF, is selected so that the product (IOFS x RREF) is
equal to the desired offset voltage. These functions are shown
in Figures 6 and 7.
DYNAMIC
VID D/A
RREF
E/A
REF
OFSOUT
As evident in Figure 7, the OFSOUT pin must be connected to
the REF pin for this current injection to function in
ISL6556ACR. The current flowing through RREF creates an
offset at the REF pin, which is ultimately duplicated at the
output of the regulator.
Once the desired output offset voltage has been determined,
use the following formulae to set ROFS:
For Positive Offset (connect ROFS to VCC):
2  R REF
R OFS = -------------------------V OFFSET
FN9096 Rev 3.00
December 29, 2004
VCC
or
GND
2.0V
-
ROFS
+
+
0.5V
VCC
(EQ. 7)
DAC
-
ISL6556ACR
OFS
GND
FIGURE 7. OUTPUT VOLTAGE OFFSET PROGRAMMING
WITH ISL6556ACR (32-LEAD QFN)
Page 14 of 24
ISL6556A
Dynamic VID
Modern microprocessors need to make changes to their core
voltage as part of normal operation. They direct the corevoltage regulator to do this by making changes to the VID
inputs during regulator operation. The power management
solution is required to monitor the DAC inputs and respond to
on-the-fly VID changes in a controlled manner. Supervising the
safe output voltage transition within the DAC range of the
processor without discontinuity or disruption is a necessary
function of the core-voltage regulator.
The ISL6556A checks the VID inputs six times every switching
cycle. If the VID code is found to have changed, the controller
waits half of a complete cycle before executing a 12.5mV
change. If during the half-cycle wait period, the difference
between DAC level and the new VID code changes sign, no
change is made. If the VID code is more than 1 bit higher or
lower than the DAC (not recommended), the controller will
execute 12.5mV changes six times per cycle until VID and
DAC are equal. It is for this reason that it is important to
carefully control the rate of VID stepping in 1-bit increments.
In order to ensure the smooth transition of output voltage
during VID change, a VID step change smoothing network
composed of RREF and CREF is required for an ISL6556A
based voltage regulator. The selection of RREF is based on the
desired offset as detailed above in Output-Voltage Offset
Programming. The selection of CREF is based on the time
duration for 1 bit VID change and the allowable delay time.
Assuming the microprocessor controls the VID change at 1 bit
every TVID, the relationship between the time constant of
RREF and CREF network and TVID is given by Equation 9.
C REF R REF = 4 T VID
(EQ. 9)
Typically RREF is selected to be 1k, so with a VID step
change rate of 5s per bit, the value of CREF is 22nF based on
Equation 9.
Initialization
Prior to initialization, proper conditions must exist on the enable
inputs and VCC. When the conditions are met, the controller
begins soft-start. Once the output voltage is within the proper
window of operation, PGOOD asserts logic 1.
Enable and Disable
While in shutdown mode, the PWM outputs are held in a highimpedance state to assure the drivers remain off. The following
input conditions must be met before the ISL6556A is released
from shutdown mode.
1. The bias voltage applied at VCC must reach the internal
power-on reset (POR) rising threshold. Once this threshold
is reached, proper operation of all aspects of the ISL6556A
is guaranteed. Hysteresis between the rising and falling
thresholds assure that once enabled, the ISL6556A will not
FN9096 Rev 3.00
December 29, 2004
inadvertently turn off unless the bias voltage drops
substantially (see Electrical Specifications).
ISL6556A INTERNAL CIRCUIT
EXTERNAL CIRCUIT
VCC
POR
CIRCUIT
+12V
10.7k
ENABLE
COMPARATOR
EN
+
-
1.40k
1.24V
ENLL
(ISL6556ACR only)
SOFT START
AND
FAULT LOGIC
FIGURE 8. POWER SEQUENCING USING THRESHOLDSENSITIVE ENABLE (EN) FUNCTION
2. The ISL6556A features an enable input (EN) for power
sequencing between the controller bias voltage and another
voltage rail. The enable comparator holds the ISL6556A in
shutdown until the voltage at EN rises above 1.24V. The
enable comparator has about 100mV of hysteresis to
prevent bounce. It is important that the driver ICs reach their
POR level before the ISL6556A becomes enabled. The
schematic in Figure 8 demonstrates sequencing the
ISL6556A with the HIP660X family of Intersil MOSFET
drivers, which require 12V bias.
3. (ISL6556ACR only) The voltage on ENLL must be logic
high to enable the controller. This pin is typically connected
to the VID_PGOOD. The ISL6556ACB has this signal
internally connected high.
4. The VID code must not be 111111 or 111110. These codes
signal the controller that no load is present. The controller
will enter shut-down mode after receiving either of these
codes and will execute soft start upon receiving any other
code. These codes can be used to enable or disable the
controller but it is not recommended. After receiving one of
these codes, the controller executes a 2-cycle delay before
changing the overvoltage trip level to the shut-down level
and disabling PWM. Overvoltage shutdown cannot be reset
using one of these codes.
To enable the controller, VCC must be greater than the POR
threshold; the voltage on EN must be greater than 1.24V; for
ISL6556ACR, ENLL must be logic high; and VID cannot be
equal to 111111 or 111110. When each of these conditions is
true, the controller immediately begins the soft-start sequence.
Soft-Start
During soft start, the DAC voltage ramps linearly from zero to
the programmed VID level. The PWM signals remain in the
Page 15 of 24
ISL6556A
64 + 1280  VID
t SS = ----------------------------------------f SW
(EQ. 10)
For example, a regulator with 250kHz switching frequency
having VID set to 1.35V has tSS equal to 6.912ms.
Power Good Signal
The power good pin (PGOOD) is an open-drain logic output
that transitions high when the converter is operating after soft
start.
PGOOD pulls low during shutdown and releases high after a
successful soft start. PGOOD only transitions low when an
undervoltage condition is detected or the controller is disabled
by a reset from EN, ENLL, POR, or one of the no-CPU VID
codes. After an undervoltage event, PGOOD will return high
unless the controller has been disabled. PGOOD does not
automatically transition low upon detection of an overvoltage
condition.
PGOOD
A 100mV offset exists on the remote-sense amplifier at the
beginning of soft start and ramps to zero during the first 640
cycles of soft start (704 cycles following enable). This prevents
the large inrush current that would otherwise occur should the
output voltage start out with a slight negative bias.
During the first 640 cycles of soft start (704 cycles following
enable) the DAC voltage increments the reference in 25mV
steps. The remainder of soft start sees the DAC ramping with
12.5mV steps.
VOUT, 500mV/DIV
+
UV
OC
-
high-impedance state until the controller detects that the
ramping DAC level has reached the output-voltage level. This
protects the system against the large, negative inductor
currents that would otherwise occur when starting with a preexisting charge on the output as the controller attempted to
regulate to zero volts at the beginning of the soft-start cycle.
The soft-start time, tSS, begins with a delay period equal to 64
switching cycles followed by a linear ramp with a rate
determined by the switching period, 1/fSW.
SOFT START, FAULT
AND CONTROL LOGIC
+
VDIFF
100A
+
I1
REPEAT FOR
EACH CHANNEL
75%
DAC
REFERENCE
-
OV
OC
-
+
100A
IAVG
OVP
VID + 0.2V
FIGURE 10. POWER GOOD AND PROTECTION CIRCUITRY
2ms/DIV
EN, 5V/DIV
Undervoltage Detection
500s/DIV
FIGURE 9. SOFT-START WAVEFORMS WITH AN UN-BIASED
OUTPUT. FSW = 500kHz
Fault Monitoring and Protection
The ISL6556A actively monitors output voltage and current to
detect fault conditions. Fault monitors trigger protective
measures to prevent damage to a microprocessor load. One
common power good indicator is provided for linking to
external system monitors. The schematic in Figure 10 outlines
the interaction between the fault monitors and the power good
signal.
FN9096 Rev 3.00
December 29, 2004
The undervoltage threshold is set at 75% of the VID code.
When the output voltage at VSEN is below the undervoltage
threshold, PGOOD gets pulled low.
Overvoltage Protection
When VCC is above 1.4V, but otherwise not valid as defined
under Power on Reset in Electrical Specifications, the
overvoltage trip circuit is active using auxiliary circuitry. In this
state, an overvoltage trip occurs if the voltage at VSEN
exceeds 1.8V.
With valid VCC, the overvoltage circuit is sensitive to the
voltage at VDIFF. In this state, the trip level is 1.7V prior to valid
enable conditions being met as described in Enable and
Disable. The only exception to this is when the IC has been
disabled by an overvoltage trip. In that case the overvoltage
trip point is VID plus 200mV. During soft start, the overvoltage
trip level is the higher of 1.7V or VID plus 200mV. Upon
successful soft start, the overvoltage trip level is 200mV above
Page 16 of 24
ISL6556A
VID. Two actions are taken by the ISL6556A to protect the
microprocessor load when an overvoltage condition occurs.
At the inception of an overvoltage event, all PWM outputs
are commanded low until the voltage at VSEN falls below
0.6V with valid VCC or 1.5V otherwise. This causes the
Intersil drivers to turn on the lower MOSFETs and pull the
output voltage below a level that might cause damage to the
load. The PWM outputs remain low until VDIFF falls to the
programmed DAC level when they enter a high-impedance
state. The Intersil drivers respond to the high-impedance
input by turning off both upper and lower MOSFETs. If the
overvoltage condition reoccurs, the ISL6556A will again
command the lower MOSFETs to turn on. The ISL6556A will
continue to protect the load in this fashion as long as the
overvoltage condition recurs.
Simultaneous to the protective action of the PWM outputs, the
OVP pin pulls to VCC delivering up to 100mA to the gate of a
crowbar MOSFET or SCR placed either on the input rail or the
output rail. Turning on the MOSFET or SCR collapses the
power rail and causes a fuse placed further up stream to blow.
The fuse must be sized such that the MOSFET or SCR will
not overheat before the fuse blows. The OVP pin is tolerant to
12V (see Absolute Maximum Ratings), so an external resistor
pull up can be used to augment the driving capability. If using
a pull up resistor in conjunction with the internal overvoltage
protection function, care must be taken to avoid nuisance trips
that could occur when VCC is below 2V. In that case, the
controller is incapable of holding OVP low.
Once an overvoltage condition is detected, normal PWM
operation ceases until the ISL6556A is reset. Cycling the
voltage on EN or ENLL or VCC below the POR-falling
threshold will reset the controller. Cycling the VID codes will
not reset the controller.
Overcurrent Protection
ISL6556A has two levels of overcurrent protection. Each
phase is protected from a sustained overcurrent condition on
a delayed basis, while the combined phase currents are
protected on an instantaneous basis.
In instantaneous protection mode, the ISL6556A takes
advantage of the proportionality between the load current
and the average current, IAVG to detect an overcurrent
condition. See the Channel-Current Balance section for
more detail on how the average current is measured. The
average current is continually compared with a constant
100A reference current as shown in Figure 10. Once the
average current exceeds the reference current, a
comparator triggers the converter to shutdown.
In individual overcurrent protection mode, the ISL6556A
continuously compares the current of each channel with the
same 100A reference current. If any channel current
exceeds the reference current continuously for eight
consecutive cycles, the comparator triggers the converter to
shutdown.
FN9096 Rev 3.00
December 29, 2004
At the beginning of overcurrent shutdown, the controller
places all PWM signals in a high-impedance state
commanding the Intersil MOSFET driver ICs to turn off both
upper and lower MOSFETs. The system remains in this state
a period of 4096 switching cycles. If the controller is still
enabled at the end of this wait period, it will attempt a soft
start. If the fault remains, trip-retry cycles continue
indefinitely as shown in Figure 11 until either controller is
disabled or the fault is cleared. Note that the energy
delivered during trip-retry cycling is much less than during
full-load operation, so there is no thermal hazard during this
kind of operation.
OUTPUT CURRENT, 50A/DIV
0A
OUTPUT VOLTAGE,
500mV/DIV
0V
2ms/DIV
FIGURE 11. OVERCURRENT BEHAVIOR IN HICCUP MODE.
FSW = 500kHz
General Design Guide
This design guide is intended to provide a high-level
explanation of the steps necessary to create a multi-phase
power converter. It is assumed that the reader is familiar with
many of the basic skills and techniques referenced below. In
addition to this guide, Intersil provides complete reference
designs that include schematics, bills of materials, and example
board layouts for all common microprocessor applications.
Power Stages
The first step in designing a multi-phase converter is to
determine the number of phases. This determination
depends heavily on the cost analysis which in turn depends
on system constraints that differ from one design to the next.
Principally, the designer will be concerned with whether
components can be mounted on both sides of the circuit
board; whether through-hole components are permitted; and
the total board space available for power-supply circuitry.
Generally speaking, the most economical solutions are
those in which each phase handles between 15 and 20A. All
surface-mount designs will tend toward the lower end of this
current range. If through-hole MOSFETs and inductors can
be used, higher per-phase currents are possible. In cases
where board space is the limiting constraint, current may be
pushed as high above 30A per phase, but these designs
Page 17 of 24
ISL6556A
require heat sinks and forced air to cool the MOSFETs,
inductors and heat-dissipating surfaces.
MOSFETs
The choice of MOSFETs depends on the current each MOSFET
will be required to conduct; the switching frequency; the
capability of the MOSFETs to dissipate heat; and the availability
and nature of heat sinking and air flow.
LOWER MOSFET POWER CALCULATION
The calculation for heat dissipated in the lower MOSFET is
simple, since virtually all of the heat loss in the lower MOSFET
is due to current conducted through the channel resistance
(rDS(ON)). In Equation 11, IM is the maximum continuous
output current; IPP is the peak-to-peak inductor current (see
Equation 1); d is the duty cycle (VOUT/VIN); and L is the perchannel inductance.
I L, 2PP  1-d 
 I M 2
P LOW 1 = r DS  ON   -----  1 – d  + ----------------------------12
 N
(EQ. 11)
An additional term can be added to the lower-MOSFET loss
equation to account for additional loss accrued during the dead
time when inductor current is flowing through the lowerMOSFET body diode. This term is dependent on the diode
forward voltage at IM, VD(ON); the switching frequency, fS; and
the length of dead times, td1 and td2, at the beginning and the
end of the lower-MOSFET conduction interval respectively.
I
I M I PP
 M
P LOW 2 = V D  ON  f S  ----- t d1 +  ------  N- + -------N
2 
I PP
-------- t
2  d2
(EQ. 12)
Thus the total maximum power dissipated in each lower
MOSFET is approximated by the summation of PLOW,1 and
PLOW,2.
UPPER MOSFET POWER CALCULATION
In addition to rDS(ON) losses, a large portion of the upperMOSFET losses are due to currents conducted across the
input voltage (VIN) during switching. Since a substantially
higher portion of the upper-MOSFET losses are dependent on
switching frequency, the power calculation is more complex.
Upper MOSFET losses can be divided into separate
components involving the upper-MOSFET switching times; the
lower-MOSFET body-diode reverse-recovery charge, Qrr; and
the upper MOSFET rDS(ON) conduction loss.
When the upper MOSFET turns off, the lower MOSFET does
not conduct any portion of the inductor current until the voltage
at the phase node falls below ground. Once the lower
MOSFET begins conducting, the current in the upper MOSFET
falls to zero as the current in the lower MOSFET ramps up to
assume the full inductor current. In Equation 13, the required
time for this commutation is t1 and the approximated
associated power loss is PUP,1.
I M I PP  t 1 
P UP,1  V IN  -----  ----  f
 N- + -------2   2 S
FN9096 Rev 3.00
December 29, 2004
(EQ. 13)
At turn on, the upper MOSFET begins to conduct and this
transition occurs over a time t2. In Equation 14, the
approximate power loss is PUP,2.
 I M I PP  t 2 
P UP, 2  V IN  ----- – ---------  ----  f S
2  2
N
(EQ. 14)
A third component involves the lower MOSFET’s reverserecovery charge, Qrr. Since the inductor current has fully
commutated to the upper MOSFET before the lowerMOSFET’s body diode can draw all of Qrr, it is conducted
through the upper MOSFET across VIN. The power dissipated
as a result is PUP,3 and is approximately
P UP,3 = V IN Q rr f S
(EQ. 15)
Finally, the resistive part of the upper MOSFETs is given in
Equation 16 as PUP,4.
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summation of the results from
Equations 13, 14, 15 and 16. Since the power equations
depend on MOSFET parameters, choosing the correct
MOSFETs can be an iterative process involving repetitive
solutions to the loss equations for different MOSFETs and
different switching frequencies.
2
 I M
I PP2
P UP,4  r DS  ON   ----- d + ---------12
 N
(EQ. 16)
Current Sensing
The ISEN pins are denoted ISEN1, ISEN2, ISEN3 and ISEN4.
The resistors connected between these pins and the
respective phase nodes determine the gains in the load-line
regulation loop and the channel-current balance loop as well
as setting the overcurrent trip point. Select values for these
resistors based on the room temperature rDS(ON) of the lower
MOSFETs; the full-load operating current, IFL; and the number
of phases, N using Equation 17 (see also Figure 3).
r DS  ON 
R ISEN = ---------------------70 10 – 6
I FL
-------N
(EQ. 17)
In certain circumstances, it may be necessary to adjust the value
of one or more ISEN resistor. When the components of one or
more channels are inhibited from effectively dissipating their
heat so that the affected channels run hotter than desired,
choose new, smaller values of RISEN for the affected phases
(see the section entitled Channel-Current Balance). Choose
RISEN,2 in proportion to the desired decrease in temperature
rise in order to cause proportionally less current to flow in the
hotter phase.
T
R ISEN ,2 = R ISEN ----------2
T 1
(EQ. 18)
In Equation 18, make sure that T2 is the desired temperature
rise above the ambient temperature, and T1 is the measured
temperature rise above the ambient temperature. While a single
Page 18 of 24
ISL6556A
adjustment according to Equation 18 is usually sufficient, it may
occasionally be necessary to adjust RISEN two or more times to
achieve optimal thermal balance between all channels.
C2 (OPTIONAL)
RC
Load-Line Regulation Resistor
The load-line regulation resistor is labeled RFB in Figure 5. Its
value depends on the desired full-load droop voltage
(VDROOP in Figure 5). If Equation 17 is used to select each
ISEN resistor, the load-line regulation resistor is as shown in
Equation 19.
CC
COMP
+
RFB
VDROOP
ISL6556A
FB
IOUT
-
V DROOP
R FB = ------------------------6
70 10
If one or more of the ISEN resistors is adjusted for thermal
balance, as in Equation 18, the load-line regulation resistor
should be selected according to Equation 20 where IFL is the
full-load operating current and RISEN(n) is the ISEN resistor
connected to the nth ISEN pin.
V DROOP
R FB = -------------------------------I FL r DS  ON 
VDIFF
(EQ. 19)
 RISEN  n 
(EQ. 20)
n
Compensation
The two opposing goals of compensating the voltage regulator
are stability and speed. Depending on whether the regulator
employs the optional load-line regulation as described in LoadLine Regulation.
FIGURE 12. COMPENSATION CONFIGURATION FOR
LOAD-LINE REGULATED ISL6556A CIRCUIT
The feedback resistor, RFB, has already been chosen as
outlined in Load-Line Regulation Resistor. Select a target
bandwidth for the compensated system, f0. The target
bandwidth must be large enough to assure adequate transient
performance, but smaller than 1/3 of the per-channel switching
frequency. The values of the compensation components
depend on the relationships of f0 to the L-C pole frequency and
the ESR zero frequency. For each of the following three, there
is a separate set of equations for the compensation
components.
Case 1:
COMPENSATING LOAD-LINE REGULATED CONVERTER
The load-line regulated converter behaves in a similar manner
to a peak-current mode controller because the two poles at the
output-filter L-C resonant frequency split with the introduction
of current information into the control loop. The final location of
these poles is determined by the system function, the gain of
the current signal, and the value of the compensation
components, RC and CC.
Since the system poles and zero are affected by the values of
the components that are meant to compensate them, the
solution to the system equation becomes fairly complicated.
Fortunately there is a simple approximation that comes very
close to an optimal solution. Treating the system as though it
were a voltage-mode regulator by compensating the L-C poles
and the ESR zero of the voltage-mode approximation yields a
solution that is always stable with very close to ideal transient
performance.
1
------------------- > f 0
2 LC
2f 0 V pp LC
R C = R FB ----------------------------------0.75V IN
0.75V IN
C C = ----------------------------------2V PP R FB f 0
Case 2:
1
1
-------------------  f 0 < ----------------------------2C  ESR 
2 LC
V PP  2  2 f 02 LC
R C = R FB -------------------------------------------0.75 V
(EQ. 21)
IN
0.75V IN
C C = -----------------------------------------------------------2
 2  f 02 V PP R FB LC
Case 3:
1
f 0 > -----------------------------2C  ESR 
2 f 0 V pp L
R C = R FB ----------------------------------------0.75 V IN  ESR 
0.75V IN  ESR  C
C C = -----------------------------------------------2V PP R FB f 0 L
In Equations 21, L is the per-channel filter inductance divided
by the number of active channels; C is the sum total of all
output capacitors; ESR is the equivalent-series resistance of
the bulk output-filter capacitance; and VPP is the peak-to-peak
sawtooth signal amplitude as described in Figure 4 and
Electrical Specifications.
FN9096 Rev 3.00
December 29, 2004
Page 19 of 24
ISL6556A
Once selected, the compensation values in Equations 21
assure a stable converter with reasonable transient
performance. In most cases, transient performance can be
improved by making adjustments to RC. Slowly increase the
value of RC while observing the transient performance on an
oscilloscope until no further improvement is noted. Normally,
CC will not need adjustment. Keep the value of CC from
Equations 21 unless some performance issue is noted.
The optional capacitor C2, is sometimes needed to bypass
noise away from the PWM comparator (see Figure 12). Keep a
position available for C2, and be prepared to install a highfrequency capacitor of between 22pF and 150pF in case any
leading-edge jitter problem is noted.
Output Filter Design
The output inductors and the output capacitor bank together to
form a low-pass filter responsible for smoothing the pulsating
voltage at the phase nodes. The output filter also must provide
the transient energy until the regulator can respond. Because it
has a low bandwidth compared to the switching frequency, the
output filter necessarily limits the system transient response.
The output capacitor must supply or sink load current while the
current in the output inductors increases or decreases to meet
the demand.
In high-speed converters, the output capacitor bank is usually
the most costly (and often the largest) part of the circuit. Output
filter design begins with minimizing the cost of this part of the
circuit. The critical load parameters in choosing the output
capacitors are the maximum size of the load step, I; the loadcurrent slew rate, di/dt; and the maximum allowable outputvoltage deviation under transient loading, VMAX. Capacitors
are characterized according to their capacitance, ESR, and
ESL (equivalent series inductance).
At the beginning of the load transient, the output capacitors
supply all of the transient current. The output voltage will
initially deviate by an amount approximated by the voltage drop
across the ESL. As the load current increases, the voltage
drop across the ESR increases linearly until the load current
reaches its final value. The capacitors selected must have
sufficiently low ESL and ESR so that the total output-voltage
deviation is less than the allowable maximum. Neglecting the
contribution of inductor current and regulator response, the
output voltage initially deviates by an amount
di
V   ESL  ----- +  ESR  I
dt
(EQ. 22)
The filter capacitor must have sufficiently low ESL and ESR so
that V < VMAX.
Most capacitor solutions rely on a mixture of high-frequency
capacitors with relatively low capacitance in combination with
bulk capacitors having high capacitance but limited highfrequency performance. Minimizing the ESL of the highfrequency capacitors allows them to support the output voltage
as the current increases. Minimizing the ESR of the bulk
FN9096 Rev 3.00
December 29, 2004
capacitors allows them to supply the increased current with
less output voltage deviation.
The ESR of the bulk capacitors also creates the majority of the
output-voltage ripple. As the bulk capacitors sink and source
the inductor ac ripple current (see Interleaving and Equation
2), a voltage develops across the bulk-capacitor ESR equal to
IC,PP (ESR). Thus, once the output capacitors are selected,
the maximum allowable ripple voltage, VPP(MAX), determines
the lower limit on the inductance.
 V IN - N V OUT  V OUT
L   ESR  --------------------------------------------------------f S V IN V PP MAX 
(EQ. 23)
Since the capacitors are supplying a decreasing portion of the
load current while the regulator recovers from the transient, the
capacitor voltage becomes slightly depleted. The output
inductors must be capable of assuming the entire load current
before the output voltage decreases more than VMAX. This
places an upper limit on inductance.
Equation 24 gives the upper limit on L for the cases when the
trailing edge of the current transient causes a greater outputvoltage deviation than the leading edge. Equation 25
addresses the leading edge. Normally, the trailing edge
dictates the selection of L because duty cycles are usually less
2NCVO
L  --------------------  V MAX - I  ESR  
 I  2
(EQ. 24)
 1.25  NC
L  --------------------------  V MAX - I  ESR    V - V 
IN
O
 I  2
(EQ. 25)
than 50%. Nevertheless, both inequalities should be
evaluated, and L should be selected based on the lower of the
two results. In each equation, L is the per-channel inductance,
C is the total output capacitance, and N is the number of active
channels.
Input Supply Voltage Selection
The VCC input of the ISL6556A can be connected either directly
to a +5V supply or through a current limiting resistor to a +12V
supply. An integrated 5.8V shunt regulator maintains the voltage
on the VCC pin when a +12V supply is used. A 300 resistor is
suggested for limiting the current into the VCC pin to a worstcase maximum of approximately 25mA.
Switching Frequency
There are a number of variables to consider when choosing
the switching frequency, as there are considerable effects on
the upper-MOSFET loss calculation. These effects are outlined
in MOSFETs, and they establish the upper limit for the
switching frequency. The lower limit is established by the
requirement for fast transient response and small outputvoltage ripple as outlined in Output Filter Design. Choose the
lowest switching frequency that allows the regulator to meet
the transient-response requirements.
Page 20 of 24
ISL6556A
INPUT-CAPACITOR CURRENT (IRMS / IO)
0.3
100
10
100
1000
SWITCHING FREQUENCY (kHz)
10000
FIGURE 13. RT vs SWITCHING FREQUENCY
·
 10.6258-  1.03167  log  f S  
– 1200
IL,PP = 0
IL,PP = 0.5 IO
IL,PP = 0.75 IO
0
0.2
0.4
0.6
0.8
1.0
FIGURE 14. NORMALIZED INPUT-CAPACITOR RMS CURRENT
vs DUTY CYCLE FOR 2-PHASE CONVERTER
Switching frequency is determined by the selection of the
frequency-setting resistor, RT (see the figures labeled Typical
Application on pages 4 and 5). Figure 13 and Equation 26 are
provided to assist in selecting the correct value for RT.
R T = 1.0203  10 
0.1
DUTY CYCLE (VO/VIN)
(EQ. 26)
Input Capacitor Selection
The input capacitors are responsible for sourcing the ac
component of the input current flowing into the upper
MOSFETs. Their RMS current capacity must be sufficient to
handle the ac component of the current drawn by the upper
MOSFETs which is related to duty cycle and the number of
active phases.
For a two phase design, use Figure 14 to determine the inputcapacitor RMS current requirement given the duty cycle,
maximum sustained output current (IO), and the ratio of the
per-phase peak-to-peak inductor current (IL,PP) to IO. Select a
bulk capacitor with a ripple current rating which will minimize
the total number of input capacitors required to support the
RMS current calculated. The voltage rating of the capacitors
should also be at least 1.25 times greater than the maximum
input voltage.
Figures 15 and 16 provide the same input RMS current
information for three and four phase designs respectively. Use
the same approach to selecting the bulk capacitor type and
number as described above.
Low capacitance, high-frequency ceramic capacitors are
needed in addition to the bulk capacitors to suppress leading
and falling edge voltage spikes. The result from the high
current slew rates produced by the upper MOSFETs turn on
and off. Select low ESL ceramic capacitors and place one as
close as possible to each upper MOSFET drain to minimize
board parasitic impedances and maximize suppression.
0.3
INPUT-CAPACITOR CURRENT (IRMS/IO)
10
0.2
0
IL,PP = 0
IL,PP = 0.5 IO
IL,PP = 0.25 IO
IL,PP = 0.75 IO
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
DUTY CYCLE (VO/VIN)
FIGURE 15. NORMALIZED INPUT-CAPACITOR RMS CURRENT
vs DUTY CYCLE FOR 3-PHASE CONVERTER
0.3
INPUT-CAPACITOR CURRENT (IRMS/IO)
RT (k)
1000
IL,PP = 0
IL,PP = 0.5 IO
IL,PP = 0.25 IO
IL,PP = 0.75 IO
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
DUTY CYCLE (VO/VIN)
FIGURE 16. NORMALIZED INPUT-CAPACITOR RMS CURRENT
vs DUTY CYCLE FOR 4-PHASE CONVERTER
FN9096 Rev 3.00
December 29, 2004
Page 21 of 24
ISL6556A
MULTI-PHASE RMS IMPROVEMENT
Figure 17 is provided as a reference to demonstrate the
dramatic reductions in input-capacitor RMS current upon the
implementation of the multi-phase topology. For example,
compare the input RMS current requirements of a two-phase
converter versus that of a single phase. Assume both
converters have a duty cycle of 0.25, maximum sustained
output current of 40A, and a ratio of IC,PP to IO of 0.5. The
single phase converter would require 17.3 Arms current
capacity while the two-phase converter would only require 10.9
Arms. The advantages become even more pronounced when
output current is increased and additional phases are added to
keep the component cost down relative to the single phase
approach.
Next, place the input and output capacitors. Position one highfrequency ceramic input capacitor next to each upper
MOSFET drain. Place the bulk input capacitors as close to the
upper MOSFET drains as dictated by the component size and
dimensions. Long distances between input capacitors and
MOSFET drains result in too much trace inductance and a
reduction in capacitor performance. Locate the output
capacitors between the inductors and the load, while keeping
them in close proximity to the microprocessor socket.
The ISL6556A can be placed off to one side or centered
relative to the individual phase switching components. Routing
of sense lines and PWM signals will guide final placement.
Critical small signal components to place close to the controller
include the ISEN resistors, RT resistor, feedback resistor, and
compensation components.
INPUT-CAPACITOR CURRENT (IRMS/IO)
0.6
Bypass capacitors for the ISL6556A and HIP660X driver bias
supplies must be placed next to their respective pins. Trace
parasitic impedances will reduce their effectiveness.
Plane Allocation and Routing
0.4
Dedicate one solid layer, usually a middle layer, for a ground
plane. Make all critical component ground connections with
vias to this plane. Dedicate one additional layer for power
planes; breaking the plane up into smaller islands of common
voltage. Use the remaining layers for signal wiring.
0.2
IL,PP = 0
IL,PP = 0.5 IO
IL,PP = 0.75 IO
0
0
0.2
0.4
0.6
0.8
1.0
DUTY CYCLE (VO/VIN)
FIGURE 17. NORMALIZED INPUT-CAPACITOR RMS
CURRENT vs DUTY CYCLE FOR SINGLE-PHASE
CONVERTER
Route phase planes of copper filled polygons on the top and
bottom once the switching component placement is set. Size
the trace width between the driver gate pins and the MOSFET
gates to carry 1A of current. When routing components in the
switching path, use short wide traces to reduce the associated
parasitic impedances.
Layout Considerations
The following layout strategies are intended to minimize the
impact of board parasitic impedances on converter performance
and to optimize the heat-dissipating capabilities of the printedcircuit board. These sections highlight some important practices
which should not be overlooked during the layout process.
Component Placement
Within the allotted implementation area, orient the switching
components first. The switching components are the most
critical because they carry large amounts of energy and tend to
generate high levels of noise. Switching component placement
should take into account power dissipation. Align the output
inductors and MOSFETs such that space between the
components is minimized while creating the PHASE plane.
Place the Intersil MOSFET driver IC as close as possible to the
MOSFETs they control to reduce the parasitic impedances due
to trace length between critical driver input and output signals.
If possible, duplicate the same placement of these components
for each phase.
FN9096 Rev 3.00
December 29, 2004
Page 22 of 24
ISL6556A
Small Outline Plastic Packages (SOIC)
M28.3 (JEDEC MS-013-AE ISSUE C)
N
28 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
H
0.25(0.010) M
B M
INCHES
E
SYMBOL
-B-
1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
B S
MILLIMETERS
MIN
MAX
NOTES
A
0.0926
0.1043
2.35
2.65
-
0.0040
0.0118
0.10
0.30
-
B
0.013
0.0200
0.33
0.51
9
C
0.0091
0.0125
0.23
0.32
-
D
0.6969
0.7125
17.70
18.10
3
E
0.2914
0.2992
7.40
7.60
4
0.05 BSC
0.394
h
0.01
0.029
L
0.016
0.050
8o
0o

0.419
1.27 BSC
H
N
NOTES:
MAX
A1
e

MIN
10.00
-
0.25
0.75
5
0.40
1.27
6
28
0o
-
10.65
28
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2
of Publication Number 95.
7
8o
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch)
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
© Copyright Intersil Americas LLC 2002-2004. All Rights Reserved.
All trademarks and registered trademarks are the property of their respective owners.
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN9096 Rev 3.00
December 29, 2004
Page 23 of 24
ISL6556A
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
L32.5x5B
32 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VHHD-2 ISSUE C
MILLIMETERS
SYMBOL
MIN
NOMINAL
MAX
NOTES
A
0.80
0.90
1.00
-
A1
-
-
0.05
-
A2
-
-
1.00
9
A3
b
0.20 REF
0.18
D
0.30
5,8
5.00 BSC
D1
D2
0.23
9
-
4.75 BSC
3.15
3.30
9
3.45
7,8
E
5.00 BSC
-
E1
4.75 BSC
9
E2
3.15
e
3.30
3.45
7,8
0.50 BSC
-
k
0.25
-
-
-
L
0.30
0.40
0.50
8
L1
-
-
0.15
10
N
32
2
Nd
8
3
Ne
8
3
P
-
-
0.60
9

-
-
12
9
Rev. 1 10/02
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P &  are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
FN9096 Rev 3.00
December 29, 2004
Page 24 of 24
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