ATMEL ATA5575M1

Features
•
•
•
•
•
•
•
•
•
•
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Contactless Power Supply
Contactless Read/Write Data Transmission
Radio Frequency fRF from 100 kHz to 150 kHz
128-bit EEPROM User Memory: 16 Bytes (8 Bits Each)
8-bit Configuration Memory
High Q-antenna Tolerance Due to Built-in Options
Applications
– Access Control
• Standard Unique Format (Manchester, RF/64)
• 40-bitData Memory
• 14-bit Parity Memory
• 9-bit Header Memory
On-chip Trimmed Antenna Capacitor
– 330 pF ±3%
– 250 pF ±3%
Mega Pads 200 µm × 400 µm
Mega Pads 200 µm × 400 µm with 25 µm Gold Bumps for Direct Coil Bonding
Other Options:
– Direct Access Mode
– OTP Functionality
1. Description
The ATA5575 is a contactless read/write identification IC (IDIC®) for applications in
the 100-kHz to 150-kHz frequency band. A single coil connected to the chip serves as
the IC’s power supply and bi-directional communication interface. The antenna and
chip together form a transponder or tag.
Read/Write
LF RFID IDIC
100 kHz to
150 kHz
ATA5575M1
Summary
Preliminary
The on-chip 128-bit user EEPROM (16 bytes with 8 bits each) can be read and written
byte-wise from a base station (reader). Data is transmitted from the IDIC (uplink) using
load modulation. This is achieved by damping the RF field with a resistive load
between the two terminals Coil 1 and Coil 2. The IC receives and decodes serial base
station commands (downlink), which are encoded as 100% amplitude modulated
(OOK) pulse-interval-encoded bit streams.
The ATA5575 is an EEPROM-based circuit. It is optimized for maximum read range.
Programming is also possible, but the write range is limited.
The chip has to be locked after loading the application-specific data into the device.
Until the enable bits are set properly, the ATA5575M1 transmits all digits “0” in unique
format. Typical applications run at 125 kHz.
NOTE: This is a summary document.
The complete document is available.
For more information, please contact
your local Atmel sales office.
9167AS–RFID–11/09
2. System Block Diagram
Figure 2-1.
RFID System Using ATA5575 Tag
Coil interface
Power
Reader
or
Base station
Data
Controller
Transponder
Memory
ATA5575
3. ATA5575 - Functional Blocks
Figure 3-1.
Block Diagram
POR
Mode register
Write
decoder
Coil 1
Analog front end
Modulator
Memory
(136-bit EEPROM)
Coil 2
Data-rate
generator
Controller
Input register
Test logic
2
HV generator
ATA5575M1 [Preliminary]
9167AS–RFID–11/09
ATA5575M1 [Preliminary]
4. Analog Front End (AFE)
The AFE includes all circuits which are directly connected to the coil terminals, it generates the
IC’s power supply and handles the bi-directional data communication with the reader. The
AFE consists of the following blocks:
• Rectifier to generate a DC supply voltage from the AC coil voltage
• Clock extractor
• Switchable load between Coil 1 and Coil 2 for data transmission from tag to the reader
• Field-gap detector for data transmission from the base station to the tag
• ESD protection circuitry
4.1
Data Rate Generator
The data rate is fixed to RF/64.
4.2
Write Decoder
The write decoder detects the write gaps and verifies the validity of the data stream according
to the Atmel® downlink protocol (pulse interval encoding).
4.3
HV Generator
This on-chip charge pump circuit generates the high voltage required for programming the
EEPROM.
4.4
DC Supply
Power is externally supplied to the IDIC via the two coil connections. The IC rectifies and regulates this RF source and uses it to generate its supply voltage.
4.5
Power-On Reset (POR)
The power-on reset circuit blocks the voltage supply to the IDIC until an acceptable voltage
threshold has been reached. This, in turn, triggers the default initialization delay sequence.
During this configuration period of 98 field clocks, the ATA5575 is initialized with the configuration data stored in EEPROM byte 16.
4.6
Clock Extraction
The clock extraction circuit uses the external RF signal as its internal clock source.
4.7
Controller
The control logic module executes the following functions:
• Load mode register with configuration data from EEPROM byte 16 after power-on and
during reading
• Controls each EEPROM memory read/write access and handles the data protection
• Handle the downlink command decoding, detecting protocol violations and error conditions
3
9167AS–RFID–11/09
4.8
Mode Register
The mode register maintains a readable shadow copy of the configuration data held in byte 16
of the EEPROM. It is continually refreshed during read mode and (re-)loaded after every POR
event or reset command. Depending on the version, the configuration data is pre-programmed
when leaving Atmel’s production.
4.9
Modulator
The modulator encodes the serialized EEPROM data for transmission to a tag reader or a
base station. Modulation available: Manchester.
4.10
Memory
Figure 4-1.
Memory Map
1………………....…………….8
Configuration Data
Byte 16
User Data
Byte 15
User Data
Byte 14
User Data
Byte 13
User Data
Byte 12
User Data
Byte 11
User Data
Byte 10
User Data
Byte 9
User Data
Byte 8
User Data
Byte 7
User Data
Byte 6
User Data
Byte 5
User Data
Byte 4
User Data
Byte 3
User Data
Byte 2
User Data
Byte 1
User Data
Byte 0
8 bits
Not transmitted
The memory is a 136-bit EEPROM, which is arranged in 17 bytes of 8 bits each. Programming
is carried out byte-wise, so a complete byte will be programmed with a single command.
Byte 16 contains the mode/configuration data, which is not transmitted during regular read
operations.
A special bit combination in byte 16 will lock the entire memory. Once locked, the memory
(including byte 16 itself) can not be re-programmed once more via the RF field.
4
ATA5575M1 [Preliminary]
9167AS–RFID–11/09
ATA5575M1 [Preliminary]
5. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Value
Unit
Maximum DC current into Coil1/Coil2
Icoil
TBD
mA
Maximum AC current into Coil1/Coil2
f = 125 kHz
Icoil p
TBD
mA
Power dissipation (dice) (free-air condition, time of
application: 1s)
Ptot
TBD
mW
Electrostatic discharge maximum to ANSI/ESD-STM5.1-2001
standard (HBM)
Vmax
TBD
V
Operating ambient temperature range
Tamb
–40 to +85
°C
Storage temperature range (data retention reduced)
Tstg
–40 to +150
°C
t
6. Electrical Characteristics
Tamb = +25°C; fcoil = 125 kHz; unless otherwise specified
No.
1
2.1
Parameters
Symbol
Min.
Typ.
Max.
Unit
RF frequency range
Test Conditions
fRF
100
125
150
kHz
Supply current
(without current
= 25°C(1)
T
consumed by the external amb
LC tank circuit)
IDD
1.5
3
µA
T
5
µA
Q
µA
Q
2.2
Read – full temperature
range
2
2.3
Programming – full
temperature range
25
3.1
Read mode and write
command(2)
Coil voltage (AC supply)
Program EEPROM(2)
3.2
4
5.1
5.2
Start-up time
Clamp
6.1
Modulation parameters
6.2
6.3
Vcoil pp
Vcoil pp = 6V
Type*
6
Vclamp
V
Q
16
Vclamp
V
Q
ms
Q
tstartup
1.1
3 mA current into Coil1/2
Vpp
TBD
17
TBD
V
T
20 mA current into Coil1/2
Vpp
TBD
20
TBD
V
T
3 mA current into Coil1/2
and modulation ON
Vpp
TBD
7
TBD
V
Q
20 mA current into Coil1/2
and modulation ON
Vpp
TBD
9
TBD
V
T
mV/°C
Q
Thermal stability
Vmod lo /Tamb
–1
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
1. IDD measurement setup: EEPROM programmed to 00 ... 000 (erase all); chip in modulation defeat.
2. Current into Coil1/Coil2 is limited to 10 mA.
3. Since the EEPROM performance is influenced by assembly processes, Atmel can not confirm the parameters for -DDW
(tested die on unsawn wafer) delivery.
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9167AS–RFID–11/09
6. Electrical Characteristics (Continued)
Tamb = +25°C; fcoil = 125 kHz; unless otherwise specified
No.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
7.1
Clock detection level
Vcoil pp = 8V
Vclkdet
TBD
550
TBD
mV
T
7.2
Gap detection level
Vcoil pp = 8V
Vgapdet med
TBD
550
TBD
mV
T
8
Programming time
From last command gap
to re-enter read mode
(64 + 648 internal clocks)
Tprog
5
5.7
6
ms
T
9
Endurance
Erase all / write all(3)
Cycles
Q
20
50
Years
Q
10.2
Data retention
10.3
11.1
11.2
ncycle
100000
tretention
10
(3)
tretention
96
hrs
T
(3)
tretention
24
hrs
Q
pF
T
Top = 55°C(3)
10.1
Top = 150°C
Top = 250°C
(4)
Resonance capacitor
Mask option
Vcoil pp = 1V
Cr
TBD
330
TBD
TBD
250
TBD
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
1. IDD measurement setup: EEPROM programmed to 00 ... 000 (erase all); chip in modulation defeat.
2. Current into Coil1/Coil2 is limited to 10 mA.
3. Since the EEPROM performance is influenced by assembly processes, Atmel can not confirm the parameters for -DDW
(tested die on unsawn wafer) delivery.
6
ATA5575M1 [Preliminary]
9167AS–RFID–11/09
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9167AS–RFID–11/09