Features • • • • • • • • • • • Contactless Power Supply Contactless Read/Write Data Transmission Radio Frequency fRF from 100 kHz to 150 kHz 128-bit EEPROM User Memory: 16 Bytes (8 Bits Each) 8-bit Configuration Memory High Q-antenna Tolerance Due to Built-in Options Applications – Access Control • Standard Unique Format (Manchester, RF/64) • 40-bitData Memory • 14-bit Parity Memory • 9-bit Header Memory On-chip Trimmed Antenna Capacitor – 330 pF ±3% – 250 pF ±3% Mega Pads 200 µm × 400 µm Mega Pads 200 µm × 400 µm with 25 µm Gold Bumps for Direct Coil Bonding Other Options: – Direct Access Mode – OTP Functionality 1. Description The ATA5575 is a contactless read/write identification IC (IDIC®) for applications in the 100-kHz to 150-kHz frequency band. A single coil connected to the chip serves as the IC’s power supply and bi-directional communication interface. The antenna and chip together form a transponder or tag. Read/Write LF RFID IDIC 100 kHz to 150 kHz ATA5575M1 Summary Preliminary The on-chip 128-bit user EEPROM (16 bytes with 8 bits each) can be read and written byte-wise from a base station (reader). Data is transmitted from the IDIC (uplink) using load modulation. This is achieved by damping the RF field with a resistive load between the two terminals Coil 1 and Coil 2. The IC receives and decodes serial base station commands (downlink), which are encoded as 100% amplitude modulated (OOK) pulse-interval-encoded bit streams. The ATA5575 is an EEPROM-based circuit. It is optimized for maximum read range. Programming is also possible, but the write range is limited. The chip has to be locked after loading the application-specific data into the device. Until the enable bits are set properly, the ATA5575M1 transmits all digits “0” in unique format. Typical applications run at 125 kHz. NOTE: This is a summary document. The complete document is available. For more information, please contact your local Atmel sales office. 9167AS–RFID–11/09 2. System Block Diagram Figure 2-1. RFID System Using ATA5575 Tag Coil interface Power Reader or Base station Data Controller Transponder Memory ATA5575 3. ATA5575 - Functional Blocks Figure 3-1. Block Diagram POR Mode register Write decoder Coil 1 Analog front end Modulator Memory (136-bit EEPROM) Coil 2 Data-rate generator Controller Input register Test logic 2 HV generator ATA5575M1 [Preliminary] 9167AS–RFID–11/09 ATA5575M1 [Preliminary] 4. Analog Front End (AFE) The AFE includes all circuits which are directly connected to the coil terminals, it generates the IC’s power supply and handles the bi-directional data communication with the reader. The AFE consists of the following blocks: • Rectifier to generate a DC supply voltage from the AC coil voltage • Clock extractor • Switchable load between Coil 1 and Coil 2 for data transmission from tag to the reader • Field-gap detector for data transmission from the base station to the tag • ESD protection circuitry 4.1 Data Rate Generator The data rate is fixed to RF/64. 4.2 Write Decoder The write decoder detects the write gaps and verifies the validity of the data stream according to the Atmel® downlink protocol (pulse interval encoding). 4.3 HV Generator This on-chip charge pump circuit generates the high voltage required for programming the EEPROM. 4.4 DC Supply Power is externally supplied to the IDIC via the two coil connections. The IC rectifies and regulates this RF source and uses it to generate its supply voltage. 4.5 Power-On Reset (POR) The power-on reset circuit blocks the voltage supply to the IDIC until an acceptable voltage threshold has been reached. This, in turn, triggers the default initialization delay sequence. During this configuration period of 98 field clocks, the ATA5575 is initialized with the configuration data stored in EEPROM byte 16. 4.6 Clock Extraction The clock extraction circuit uses the external RF signal as its internal clock source. 4.7 Controller The control logic module executes the following functions: • Load mode register with configuration data from EEPROM byte 16 after power-on and during reading • Controls each EEPROM memory read/write access and handles the data protection • Handle the downlink command decoding, detecting protocol violations and error conditions 3 9167AS–RFID–11/09 4.8 Mode Register The mode register maintains a readable shadow copy of the configuration data held in byte 16 of the EEPROM. It is continually refreshed during read mode and (re-)loaded after every POR event or reset command. Depending on the version, the configuration data is pre-programmed when leaving Atmel’s production. 4.9 Modulator The modulator encodes the serialized EEPROM data for transmission to a tag reader or a base station. Modulation available: Manchester. 4.10 Memory Figure 4-1. Memory Map 1………………....…………….8 Configuration Data Byte 16 User Data Byte 15 User Data Byte 14 User Data Byte 13 User Data Byte 12 User Data Byte 11 User Data Byte 10 User Data Byte 9 User Data Byte 8 User Data Byte 7 User Data Byte 6 User Data Byte 5 User Data Byte 4 User Data Byte 3 User Data Byte 2 User Data Byte 1 User Data Byte 0 8 bits Not transmitted The memory is a 136-bit EEPROM, which is arranged in 17 bytes of 8 bits each. Programming is carried out byte-wise, so a complete byte will be programmed with a single command. Byte 16 contains the mode/configuration data, which is not transmitted during regular read operations. A special bit combination in byte 16 will lock the entire memory. Once locked, the memory (including byte 16 itself) can not be re-programmed once more via the RF field. 4 ATA5575M1 [Preliminary] 9167AS–RFID–11/09 ATA5575M1 [Preliminary] 5. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Maximum DC current into Coil1/Coil2 Icoil TBD mA Maximum AC current into Coil1/Coil2 f = 125 kHz Icoil p TBD mA Power dissipation (dice) (free-air condition, time of application: 1s) Ptot TBD mW Electrostatic discharge maximum to ANSI/ESD-STM5.1-2001 standard (HBM) Vmax TBD V Operating ambient temperature range Tamb –40 to +85 °C Storage temperature range (data retention reduced) Tstg –40 to +150 °C t 6. Electrical Characteristics Tamb = +25°C; fcoil = 125 kHz; unless otherwise specified No. 1 2.1 Parameters Symbol Min. Typ. Max. Unit RF frequency range Test Conditions fRF 100 125 150 kHz Supply current (without current = 25°C(1) T consumed by the external amb LC tank circuit) IDD 1.5 3 µA T 5 µA Q µA Q 2.2 Read – full temperature range 2 2.3 Programming – full temperature range 25 3.1 Read mode and write command(2) Coil voltage (AC supply) Program EEPROM(2) 3.2 4 5.1 5.2 Start-up time Clamp 6.1 Modulation parameters 6.2 6.3 Vcoil pp Vcoil pp = 6V Type* 6 Vclamp V Q 16 Vclamp V Q ms Q tstartup 1.1 3 mA current into Coil1/2 Vpp TBD 17 TBD V T 20 mA current into Coil1/2 Vpp TBD 20 TBD V T 3 mA current into Coil1/2 and modulation ON Vpp TBD 7 TBD V Q 20 mA current into Coil1/2 and modulation ON Vpp TBD 9 TBD V T mV/°C Q Thermal stability Vmod lo /Tamb –1 *) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data Notes: 1. IDD measurement setup: EEPROM programmed to 00 ... 000 (erase all); chip in modulation defeat. 2. Current into Coil1/Coil2 is limited to 10 mA. 3. Since the EEPROM performance is influenced by assembly processes, Atmel can not confirm the parameters for -DDW (tested die on unsawn wafer) delivery. 5 9167AS–RFID–11/09 6. Electrical Characteristics (Continued) Tamb = +25°C; fcoil = 125 kHz; unless otherwise specified No. Parameters Test Conditions Symbol Min. Typ. Max. Unit Type* 7.1 Clock detection level Vcoil pp = 8V Vclkdet TBD 550 TBD mV T 7.2 Gap detection level Vcoil pp = 8V Vgapdet med TBD 550 TBD mV T 8 Programming time From last command gap to re-enter read mode (64 + 648 internal clocks) Tprog 5 5.7 6 ms T 9 Endurance Erase all / write all(3) Cycles Q 20 50 Years Q 10.2 Data retention 10.3 11.1 11.2 ncycle 100000 tretention 10 (3) tretention 96 hrs T (3) tretention 24 hrs Q pF T Top = 55°C(3) 10.1 Top = 150°C Top = 250°C (4) Resonance capacitor Mask option Vcoil pp = 1V Cr TBD 330 TBD TBD 250 TBD *) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data Notes: 1. IDD measurement setup: EEPROM programmed to 00 ... 000 (erase all); chip in modulation defeat. 2. Current into Coil1/Coil2 is limited to 10 mA. 3. Since the EEPROM performance is influenced by assembly processes, Atmel can not confirm the parameters for -DDW (tested die on unsawn wafer) delivery. 6 ATA5575M1 [Preliminary] 9167AS–RFID–11/09 Headquarters International Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Asia Unit 1-5 & 16, 19/F BEA Tower, Millennium City 5 418 Kwun Tong Road Kwun Tong, Kowloon Hong Kong Tel: (852) 2245-6100 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-en-Yvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Technical Support [email protected] Sales Contact www.atmel.com/contacts Product Contact Web Site www.atmel.com Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. 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