LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance —10% • Complete Typical Design Curves MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2106 MV2108 MV2109 MV2111 MV2115 6.8-100p 30 VOLTS 1 ANODE 3 CATHODE VOLTAGE VARIABLE CAPACITANCE DIODES 3 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF PD Forward power Dissipation @T A = 25°C Derate above 25°C Junction Temperature TJ Storage Temperature Range T stg M V 2 1 X X MMBV21XXLT1 Unit 30 Vdc 200 mAdc 280 225 mW 2.8 1.8 mW/°C +150 °C –55 to +150 °C DEVICE MARKING MMBV2101LT1=M4G MMBV2103LT1=4H MMBV2105LT1=4U MMBV2107LT1=4W MMBV2108LT1=4X MMBV2109LT1=4J ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=1.0µAdc) Reverse Voltage Leakage Current (VR=25Vdc,TA=25°C) Diode Capacitance Temperature Coefficient (VR=4.0Vdc,f=1.0MHz) Symbol Min Typ Max Unit V (BR)R 30 — — Vdc IR — — 0.1 µAdc TCC — 280 — ppm/°C MMBV2101~MMBV2109 –1/3 MV2101~MV2115 LESHAN RADIO COMPANY, LTD. MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115 C V Device R MMBV2101LT1/MV2101 MMBV2103LT1 MV2104 MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1/MV2108 MMBV2109LT1/MV2109 MV2111 MV2115 , Diode Capacitance = 4.0 Vdc, f = 1.0 MHz pF T Min 6.1 9.0 10.8 13.5 19.8 24.3 29.7 42.3 90 Nom 6.8 10 12 15 22 27 33 47 100 Q, Figure of Merit V R = 4.0 Vdc, f = 50 MHz Max 7.5 11 13.2 16.5 24.2 29.7 36.3 51.7 110 Typ 450 400 400 400 350 300 200 150 100 T R, Tuning Ratio C 2 /C 30 f = 1.0 MHz Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.6 Typ 2.7 2.9 2.9 2.9 2.9 3.0 3.0 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3 MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk. PARAMETER TEST METHODS 1. C T , DIODE CAPACITANCE (C T = C C + C J ). C T is measured at 1.0 MHz using a ca-pacitance bridge (Boonton Electronics Model 75A or equivalent). 2. T R, TUNING RATIO T R is the ratio of C T measured at 2.0 Vdc divided by C T measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an 4.T CC,DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz, TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the following equation,which defines TC C: CT(+85°C) – CT(–65°C ) 106 . TC C = 85+65 C T(25°C) Accuracy limited by measurement of CT to±0.1pF. ad-mittance bridge at the specified frequency and substitut-ing in the following equations: Q= 2πfC G (Booton Electronics Model 33As8 or equivalent).Use Lead Length ~1/16”. ~ MMBV2101~MMBV2109 –2/3 MV2101~MV2115 LESHAN RADIO COMPANY, LTD. MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115 TYPICAL DEVICE CHARACTERISTICS 1000 C T , DIODE CAPACITANCE (pF) 500 MV2115 200 100 MMBV2109LT1/MV2109 50 MMBV2105LT1/MV2105 20 MMBV2101LT1/MV2101 10 5.0 2.0 1.0 0.1 0.2 0.5 0.3 1.0 5.0 3.0 2.0 20 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 100 50 VR = 2.0 Vdc 1.030 1.020 VR = 4.0 Vdc 1.010 1.000 VR = 30 Vdc 0.990 NORMALIZED TO CT at TA = 25°C VR = (CURVE) 0.980 0.970 0.960 -75 -50 -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (°C) I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE 1.040 TA = 125°C 20 10 5.0 2.0 1.0 0.50 TA = 75°C 0.20 0.10 TA = 25°C 0.05 +100 0.02 0.01 +125 0 MMBV2109LT1/MV2109 MV2115 100 50 30 20 10 1.0 TA = 25°C f = 50 MHz 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 20 25 30 5000 3000 2000 MMBV2101LT1/MV2101 500 300 200 15 Figure 3. Reverse Current versus Reverse Bias Voltage Q, FIGURE OF MERIT Q, FIGURE OF MERIT 1000 10 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature 5000 3000 2000 5.0 20 Figure 4. Figure of Merit versus Reverse Voltage 30 1000 MMBV2101LT1/MV2101 500 300 200 100 50 30 20 10 10 MV2115 TA = 25°C VR = 4.0 Vdc 20 MMBV2109LT1/MV2109 100 30 50 70 f, FREQUENCY (MHz) 200 250 Figure 5. Figure of Merit versus Frequency MMBV2101~MMBV2109 –3/3 MV2101~MV2115