Hitachi HRF502A Silicon schottky barrier diode for rectifying Datasheet

HRF502A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-245C(Z)
Rev 3
Sep. 1997
Features
• Low forward voltage drop and suitable for high effifiency rectifying.
• DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRF502A
502A
DO-214
Outline
Cathode mark
Mark
502A
1
2
Lot No.
1. Cathode
2. Anode
HRF502A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
*1
RRM
Repetitive peak reverse
voltage
V
Average rectified current
I o*1
*2
Value
Unit
20
V
5
A
100
A
Non-Repetitive peak
forward surge current
I FSM
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
Note:
Note:
1. See from Fig.4 to Fig.7
2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
0.40
V
I F = 5A
Reverse current
IR
—
—
1.0
mA
VR = 20V
ESD-Capability
—
250
—
—
V
C=200pF , R=0Ω , Both forward and reverse
direction 1 pulse.
Thermal resistance
Rth(j-a)
—
90
—
°C/W Glass epoxy board
Rth(j-c)
—
42
—
Note:
1. Glass epoxy board
Land size
3.5
6.8
2.0
2
Unit: mm
Tc=25°C
*1
HRF502A
Main Characteristic
2
10
Pulse test
-2
Pulse test
Ta=75°C
10
Ta=75°C
Ta=25°C
1.0
10
10
10
Reverse current IR (A)
Forward current I F (A)
10
-1
-3
Ta=25°C
-4
10
-5
10
-2
-3
-6
0
0.1
0.2
0.3
0.5
0.4
Forward voltage V F (V)
0.6
Fig.1 Forward current Vs. Forward voltage
10
10
10
0
5
10
20
15
Reverse voltage VR (V)
25
Fig.2 Reverse current Vs. Reverse voltage
3
Capacitance C (pF)
f=1MHz
Pulse test
2
10
10
1.0
10
Reverse voltage V R (V)
40
Fig.3 Capacitance Vs. Reverse voltage
3
HRF502A
Main Characteristic
12
5
Forward power dissipation Pd (W)
t
4
t
D= \
T
T
D=1/6
Tj =25°C
3
Sin
D=1/3
D=1/2
2
DC
1
Reverse power dissipation Pd (W)
0V
0A
t
10
T
Tj =125°C
D=1/2
6
Sin
4
2
0
0
1
3
2
4
5
6
0
5
Fig.4 Forward p ower dissipation Vs. Forward current
6
10
Fig.5 Reverse power dissipation Vs. Reverse voltage
6
VR=VRRM/2
Tj =125°C
5
VR=VRRM/2
Tj =125°C
Glass epoxy PCB
5
Average forward current IO (A)
DC
4
Sin
D=1/2
3
D=1/3
2
D=1/6
1
0
-25
DC
4
3
2
1
0
25
50
75
100
20
15
Reverse voltage V R(V)
Forward current I F (A)
Average forward current IO (A)
D=2/3
8
0
125
Case temperature Tc (°C)
Fig.6 Average forward current Vs. Case temperature
4
D=5/6
t
D= \
T
0
-25
Sin
D=1/2
0
25
50
75
100
125
Ambient temperature Ta (°C)
Fig.7 Average forward current Vs. Ambient temperature
HRF502A
Package Dimensions
Unit : mm
7.0 ± 0.2
2
4.0 ± 0.2
502A
Lot No.
8.0 ± 0.3
1 Cathode
2 Anode
1.2 ± 0.3
2.1 ± 0.2
0.25
1
3.0 ± 0.2
Cathode Mark
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
DO-214
DO-214
—
0.16
5
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