NSC CD4011BC Quad 2-input nor(nand) buffered b series gate Datasheet

CD4001BM/CD4001BC Quad 2-Input
NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input
NAND Buffered B Series Gate
General Description
Features
These quad gates are monolithic complementary MOS
(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source
and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs
which improve transfer characteristics by providing very
high gain.
All inputs are protected against static discharge with diodes
to VDD and VSS.
Y
Y
Y
Y
Low power TTL
Fan out of 2 driving 74L
compatibility
or 1 driving 74LS
5V – 10V – 15V parametric ratings
Symmetrical output characteristics
Maximum input leakage 1 mA at 15V over full temperature range
Schematic Diagrams
CD4001BC/BM
(/4 of device shown
JeAaB
Logical ‘‘1’’ e High
Logical ‘‘0’’ e Low
TL/F/5939 – 2
*All inputs protected by standard
CMOS protection circuit.
TL/F/5939 – 1
CD4011BC/BM
(/4 of device shown
JeA#B
Logical ‘‘1’’ e High
Logical ‘‘0’’ e Low
TL/F/5939 – 6
*All inputs protected by standard
CMOS protection circuit.
TL/F/5939 – 5
C1995 National Semiconductor Corporation
TL/F/5939
RRD-B30M105/Printed in U. S. A.
CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
March 1988
Absolute Maximum Ratings (Notes 1 and 2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Operating Range (VDD)
Voltage at any Pin
b 0.5V to VDD a 0.5V
Power Dissipation (PD)
Dual-In-Line
Small Outline
VDD Range
3 VDC to 15 VDC
Operating Temperature Range
CD4001BM, CD4011BM
CD4001BC, CD4011BC
b 55§ C to a 125§ C
b 40§ C to a 85§ C
700 mW
500 mW
b 0.5 VDC to a 18 VDC
b 65§ C to a 150§ C
Storage Temperature (TS)
Lead Temperature (TL)
(Soldering, 10 seconds)
260§ C
DC Electrical Characteristics CD4001BM, CD4011BM (Note 2)
Symbol
Parameter
b 55§ C
Conditions
Min
Max
a 25§ C
Min
a 125§ C
Typ
Max
Min
Units
Max
IDD
Quiescent Device
Current
VDD e 5V, VIN e VDD or VSS
VDD e 10V, VIN e VDD or VSS
VDD e 15V, VIN e VDD or VSS
0.25
0.50
1.0
0.004
0.005
0.006
0.25
0.50
1.0
7.5
15
30
mA
mA
mA
VOL
Low Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
V
V
V
VOH
High Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
VIL
Low Level
Input Voltage
VDD e 5V, VO e 4.5V
VDD e 10V, VO e 9.0V
VDD e 15V, VO e 13.5V
VIH
High Level
Input Voltage
VDD e 5V, VO e 0.5V
VDD e 10V, VO e 1.0V
VDD e 15V, VO e 1.5V
3.5
7.0
11.0
3.5
7.0
11.0
3
6
9
3.5
7.0
11.0
V
V
V
IOL
Low Level Output
Current
(Note 3)
VDD e 5V, VO e 0.4V
VDD e 10V, VO e 0.5V
VDD e 15V, VO e 1.5V
0.64
1.6
4.2
0.51
1.3
3.4
0.88
2.25
8.8
0.36
0.9
2.4
mA
mA
mA
IOH
High Level Output
Current
(Note 3)
VDD e 5V, VO e 4.6V
VDD e 10V, VO e 9.5V
VDD e 15V, VO e 13.5V
b 0.64
b 1.6
b 4.2
b 0.51
b 1.3
b 3.4
b 0.88
b 2.25
b 8.8
b 0.36
b 0.9
b 2.4
mA
mA
mA
IIN
Input Current
VDD e 15V, VIN e 0V
VDD e 15V, VIN e 15V
(
(
lIOl k 1 mA
lIOl k 1 mA
4.95
9.95
14.95
4.95
9.95
14.95
1.5
3.0
4.0
5
10
15
2
4
6
4.95
9.95
14.95
V
V
V
1.5
3.0
4.0
1.5
3.0
4.0
b 0.10
b 10 b 5
b 0.10
b 1.0
0.10
10b5
0.10
1.0
V
V
V
mA
mA
Connection Diagrams
CD4011BC/CD4011BM
Dual-In-Line Package
CD4001BC/CD4001BM
Dual-In-Line Package
TL/F/5939 – 4
Top View
Order Number CD4001B or CD4011B
TL/F/5939–3
Top View
2
DC Electrical Characteristics CD4001BC, CD4011BC (Note 2)
Symbol
Parameter
b 40§ C
Conditions
Min
a 25§ C
Max
Min
a 85§ C
Min
Units
Typ
Max
Max
1
2
4
0.004
0.005
0.006
1
2
4
7.5
15
30
mA
mA
mA
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
V
V
V
IDD
Quiescent Device
Current
VDD e 5V, VIN e VDD or VSS
VDD e 10V, VIN e VDD or VSS
VDD e 15V, VIN e VDD or VSS
VOL
Low Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
High Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
VIL
Low Level
Input Voltage
VDD e 5V, VO e 4.5V
VDD e 10V, VO e 9.0V
VDD e 15V, VO e 13.5V
VIH
High Level
Input Voltage
VDD e 5V, VO e 0.5V
VDD e 10V, VO e 1.0V
VDD e 15V, VO e 1.5V
3.5
7.0
11.0
3.5
7.0
11.0
3
6
9
3.5
7.0
11.0
V
V
V
IOL
Low Level Output
Current
(Note 3)
VDD e 5V, VO e 0.4V
VDD e 10V, VO e 0.5V
VDD e 15V, VO e 1.5V
0.52
1.3
3.6
0.44
1.1
3.0
0.88
2.25
8.8
0.36
0.9
2.4
mA
mA
mA
IOH
High Level Output
Current
(Note 3)
VDD e 5V, VO e 4.6V
VDD e 10V, VO e 9.5V
VDD e 15V, VO e 13.5V
b 0.52
b 1.3
b 3.6
b 0.44
b 1.1
b 3.0
b 0.88
b 2.25
b 8.8
b 0.36
b 0.9
b 2.4
mA
mA
mA
IIN
Input Current
VDD e 15V, VIN e 0V
VDD e 15V, VIN e 15V
VOH
(
(ll
lIOl k 1 mA
4.95
9.95
14.95
IO k 1 mA
4.95
9.95
14.95
5
10
15
1.5
3.0
4.0
2
4
6
4.95
9.95
14.95
1.5
3.0
4.0
V
V
V
1.5
3.0
4.0
V
V
V
b 0.30
b 10 b 5
b 0.30
b 1.0
0.30
10b5
0.30
1.0
mA
mA
AC Electrical Characteristics* CD4001BC, CD4001BM
TA e 25§ C, Input tr; tf e 20 ns. CL e 50 pF, RL e 200k. Typical temperature coefficient is 0.3%/§ C.
Conditions
Typ
Max
Units
tPHL
Symbol
Propagation Delay Time,
High-to-Low Level
Parameter
VDD e 5V
VDD e 10V
VDD e 15V
120
50
35
250
100
70
ns
ns
ns
tPLH
Propagation Delay Time,
Low-to-High Level
VDD e 5V
VDD e 10V
VDD e 15V
110
50
35
250
100
70
ns
ns
ns
tTHL, tTLH
Transition Time
VDD e 5V
VDD e 10V
VDD e 15V
90
50
40
200
100
80
ns
ns
ns
CIN
Average Input Capacitance
Any Input
5
7.5
pF
CPD
Power Dissipation Capacity
Any Gate
14
pF
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: All voltages measured with respect to VSS unless otherwise specified.
Note 3: IOL and IOH are tested one output at a time.
3
AC Electrical Characteristics* CD4011BC, CD4011BM
TA e 25§ C, Input tr; tf e 20 ns. CL e 50 pF, RL e 200k. Typical Temperature Coefficient is 0.3%/§ C.
Parameter
Conditions
Typ
Max
Units
tPHL
Symbol
Propagation Delay,
High-to-Low Level
VDD e 5V
VDD e 10V
VDD e 15V
120
50
35
250
100
70
ns
ns
ns
tPLH
Propagation Delay,
Low-to-High Level
VDD e 5V
VDD e 10V
VDD e 15V
85
40
30
250
100
70
ns
ns
ns
tTHL, tTLH
Transition Time
VDD e 5V
VDD e 10V
VDD e 15V
90
50
40
200
100
80
ns
ns
ns
CIN
Average Input Capacitance
Any Input
5
7.5
CPD
Power Dissipation Capacity
Any Gate
14
pF
pF
*AC Parameters are guaranteed by DC correlated testing.
Typical Performance Characteristics
Typical
Transfer Characteristics
Typical
Transfer Characteristics
TL/F/5939–7
Typical
Transfer Characteristics
TL/F/5939 – 8
TL/F/5939 – 9
Typical
Transfer Characteristics
TL/F/5939 – 11
TL/F/5939–10
FIGURE 5
4
TL/F/5939 – 12
FIGURE 6
Typical Performance Characteristics (Continued)
TL/F/5939–13
FIGURE 7
TL/F/5939 – 14
FIGURE 8
TL/F/5939 – 15
FIGURE 9
TL/F/5939–16
TL/F/5939 – 18
FIGURE 10
TL/F/5939 – 17
FIGURE 11
FIGURE 12
TL/F/5939 – 19
TL/F/5939 – 20
FIGURE 13
FIGURE 14
5
CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number CD4001BMJ, CD4001BCJ, CD40011BMJ or CD4011BCJ
NS Package Number J14A
Molded Dual-In-Line Package (N)
Order Number CD4001BMN, CD4001BCN, CD4011BMN or CD4011BCN
NS Package Number N14A
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