Rohm DTC114WKA 100ma / 50v digital transistors (with built-in resistors) Datasheet

100mA / 50V Digital transistors
(with built-in resistors)
DTC114WE / DTC114WUA / DTC114WKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
 Features
1)Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2)The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic
effects are almost completely eliminated.
3)Only the on / off conditions need to be set for operation,
making the device design easy.
4)Higher mounting densities can be achieved.
0.7
1.6
0.55
0.3
(2)
1.6
0.8
(3)
0.2
0.15
0.5 0.5
1.0
(1) GND
0.1Min.
(1)
0.2
Each lead has same dimensions
(2) IN
(3) OUT
UMT3
 Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Abbreviated symbol : 84
2.0
<SC-70>
0.9
0.7
0.2
0.3
0.1Min.
(1)
(2)
 Packaging specifications
2.1
1.25
(3)
0.65 0.65
Package
Packaging type
EMT3 UMT3 SMT3
Taping Taping Taping
Code
Basic ordering unit (pieces)
TL
3000
DTC114WE
−
−
DTC114WUA
T146
3000
−
Abbreviated symbol : 84
2.9
SMT3
−
0.4
<SC-59>
−
1.1
0.8
(3)
1.6
2.8
DTC114WKA
T106
3000
−
Each lead has same dimensions
 Inner circuit
(2)
(1)
0.95 0.95
0.15
1.9
R1
IN
OUT
(1) GND
(2) IN
(3) OUT
R2
0.3Min.
Part No.
0.15
1.3
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : 84
GND(+)
IN
OUT
GND(+)
R1=10kΩ / R2=4.7kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.C
DTC114WE / DTC114WUA / DTC114WKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
VCC
VI
50
−10 to +30
100
100
150 ∗
V
V
Supply voltage
Input voltage
IO
Output current
IC(Max.)
DTC114WE
DTC114WUA / DTC114WKA
Junction temperature
Storage temperature
Power
dissipation
PD
Tj
200 ∗
150
Tstg
−55 to +150
mA
mW
°C
°C
∗ When mounted on the recommended land
 Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Input voltage
VI(off)
VI(on)
−
−
0.8
3
−
−
Output voltage
VO(on)
−
0.1
0.3
V
II
−
−
0.88
0.5
mA
GI
−
−
24
R1
R2/R1
7
0.37
−
10
0.47
−
250
−
13
0.57
−
Input current
IO(off)
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
fT
∗
Unit
Conditions
VCC=5V, IO=100μA
V
VO=0.3V, IO=2mA
IO=10mA, II=0.5mA
μA
VI=5V
VCC=50V, VI=0V
−
IO=10mA, VO=5V
kΩ
−
MHz
−
−
VCE=10V, IE= −5mA, f=100MHz
 Electrical characteristic curves
1k
VCC=5V
5m
Ta=100°C
5
Ta= −40°C
Ta= 25°C
2
Ta=100°C
1
500m
Ta=100°C
1m
500μ
Ta=25°C
200μ
100μ
50μ
Ta= −40°C
20μ
10μ
5μ
5m 10m 20m 50m 100m
Fig.1 Input voltage vs. Output current
(ON characteristics)
1
1μ
0
500m
1
1.5
2
2.5
3
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
200
Ta= 25°C
100
Ta= −40°C
50
20
10
5
2
2μ
100m
100μ 200μ 500μ 1m 2m
DC CURRENT GAIN : GI
2m
20
10
VO=5V
500
200m
OUTPUT VOLTAGE : VO(on) (V)
10m
VO=0.3V
50
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on) (V)
100
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1
100μ 200μ 500μ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
IO / II= 20
500m
Ta= 25°C
200m
Ta=100°C
100m
Ta= −40°C
50m
20m
10m
1m
2m
5m
10m
20m
50m
100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.C
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