, L/nc. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 N-Channel JFETs J/SST/U308 Series J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number Vosfoto (V) V,BR,GSS Min (V) gfsMin (mS) loss Mi" (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to^l -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10 24 FEATURES BENEFITS APPLICATIONS • Excellent High Frequency Gain: Gps 11.5 dB@ 450 MHz • Very Low Noise: 2.7 dB @ 450 MHz • Very Low Distortion • High ac/dc Switch Off-Isolation • • • • • • • • • Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilities TO-226AA (TO-92) TO-236 (SOT-23) Top View SST308 (Z8)" SST309 (Z9)* SST310 (ZO)* and is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.) For similar dual products packaged in the TO-78, see the U430/431 data sheet. TO-206AC (TO-52) G and Case "Marking Code for TO-236 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage -25 V Operating Junction Temperature Gate Current : 10 mA 20 mA Power Dissipation : (J/SST Prefixes) .................... (U Prefix) .......................... Lead Temperature (V^" from case for 10 sec.) ................... 300°C Storage Temperature : (J/SST Prefixes) .............. -55 to 150°C (U Prefix) .................... -65 to 175°C -55 to 150"C (J/SST Prefixes)3 (U Prefix)" 350 mW 500 mW Notes a. Derate 2.8 mW/°C above 25°C b. Derate 4 mW/°C above 25° C SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25 C UNLESS NOTED) Limits J/SST308 Parameter Symbol Test Conditions Typa V(BR)GSS IG = -1 MA ,VDS = 0 V -35 J/SST309 Min Max Min -25 -25 Max J/SST310 Min Max Unit Static Gate-Source Breakdown Voltage -25 V VGS(off) VDS = 10V ID = 1 nA -1 -6.5 -1 -4 -2 -6.5 V Saturation Drain Current bss VDS = 10V, VGS = 0 v 12 60 12 30 24 60 mA Gate Reverse Current IGSS Gate-Source Cutoff Voltage VGS = -15V , VDS = 0 V Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage IG T A =125°C VDG = 9V, ID = 10mA rDS(on) VGS = 0 V, VoS(F) IG = 10mA VDS = 0 V D = 1 mA J -0.002 -1 -1 -1 nA -0.001 -1 -1 -1 uA -15 PA 35 Q 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance Qfs Common-Source Output Conductance 9os Common-Source Input Capacitance ciss Common-Source Reverse Transfer Capacitance Crss 14 V D S =10 V, ID = 10mA f = 1 kHz VDS =10 \t = 1 MHz J Equivalent Input Noise Voltage en 8 mS 110 250 250 250 5 5 5 2.5 2.5 2.5 J 4 SST 4 J 1.9 SST 1.9 VDS = 10 V, b = 10mA f = 100 Hz 10 8 6 uS pF nV/ VHZ High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance f = 105 MHz 9fg 9og Common-Gate Power Gainc Gpg Noise Figure NF 14 f = 450 MHz 13 f = 105MHz 0.16 VDS =10 V f = 450 MHz 0.55 ID = 10 mA f = 105 MHz 16 f = 450 MHz 11.5 f = 105 MHz 1.5 f = 450 MHz 2.7 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW < 300 us duty cycle < 3%. c. Gain (Gpg) measured at optimum input noise match. mS dB SPECIFICATIONS FOR U309 AND U31O (TA = 25 C UNLESS NOTED) Limits U310 U309 Parameter Symbol Max Min , 4 -A 12 30 Test Conditions Typa Min V(BR)GSS IG = -1 MA , VDS = 0 V -35 -25 VcS(off) VDS = 10V, ID = 1 nA Max Unit -2.5 -6 V 24 60 mA -0.15 nA Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current bss Gate Reverse Current 'GSS VDS = iov, vos = o v VGS = -15V,V DS = O V Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage T A =125°C VDG = 9V, ID = 10mA -0.002 -0.15 -0.001 V -25 0.15 -0.15 uA -15 PA TDS(on) VGS = 0 V, D = 1 mA 35 H VGS(F) IG = 10mA, VDS = 0 V 0.7 IG I I V Dynamic Common-Source Forward Transconductance 9f> Common-Source Output Conductance 9os Common-Source Input Capacitance 14 10 mS 10 VDS= 10 V, ID = 10mA f = 1 kHz Ciss Crss Equivalent Input Noise Voltage en 250 250 4 5 5 1.9 2.5 2.5 VDS = 10 v, VGS = -iov f=1 MHz Common-Source Reverse Transfer Capacitance 110 VDS =10 V, ID = 10mA f = 100 Hz uS pF nV/ VHz 6 High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance f= 105 MHz 9fg Sog Vn<= = 10 V ID = 10mA Common-Gate Power Gain0 GW 14 f = 450 MHz 13 f= 105 MHz 0.16 f = 450 MHz 0.55 f = 105 MHz 16 14 14 f = 450 MHz 11.5 10 10 f = 105MHz 1.5 2 2 f = 450 MHz 2.7 3.5 3.5 mS dB Noise Figure NF Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW < 300 us duty cycle < 3%. c. Gain (Gpg) measured at optimum input noise match.