Infineon ESD5V3S1U-02LRH Silicon tvs diode Datasheet

ESD5V3S1U-02LRH
Silicon TVS Diode
• ESD / transient protection of data and power lines
in low voltage applications according to:
IEC61000-4-2 (ESD): ± 25 kV (air) 20 kV (contact)
IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns)
IEC61000-4-5 (surge): 5.5 A / 66 W (8/20 µs)
• Small form factor (0402 inch):
1.0 x 0.6 x 0.4 mm3
• Uni-directional, working voltage up to 5.3 V
• Ultralow clamping voltage,
protects against both positive and
negative ESD strikes
• Ultralow dynamic resistance 0.27Ω
• Very fast response time
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Applications
• Digital interfaces (medium speed)
• Vcc protection
• Keypad, trackball protection, camera, displays in:
mobile communications (smartphone,
camera phone & added functions e.g. mobile TV)
• Digital consumer & computer electronics:
laptops, PC, laserjet printer, photo printer, scanner,
input devices (mouse, keyboard, remote control ...)
• Industrial: security systems, sensors, white goods.
ESD5V3S1U-02LRH
1
2
Type
ESD5V3S1U-02LRH
Package
TSLP-2-17
Configuration
1 line, uni-directional
1
Marking
E2
2009-12-07
ESD5V3S1U-02LRH
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
ESD air / contact discharge 1)
VESD
25 / 20
kV
Peak pulse current (tp = 8 / 20 µs)2)
I pp
5.5
A
Peak pulse power (tp = 8 / 20 µs2)
Ppk
66
W
Operating temperature range
T op
-55...125
°C
Storage temperature
T stg
-65...150
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Reverse working voltage
VRWM
-
-
5.3
Breakdown voltage
V(BR)
5.7
-
-
-
-
0.1
V
I(BR) = 1 mA
Reverse current
IR
µA
VR = 3.3 V
Clamping voltage
V
VCL
IPP = 1 A, tp = 8/20 µs2)
-
7
9
IPP = 3.5 A, tp = 8/20 µs 2)
-
8
10
IPP = 5.5 A, tp = 8/20 µs 2)
-
9
11
IPP = 1 A, tp = 8/20 µs2)
-
1.2
2
IPP = 3.5 A, tp = 8/20 µs 2)
-
2
3
IPP = 5.5 A, tp = 8/20 µs 2)
-
2.5
3.5
Forward clamping voltage
VFC
Diode capacitance
pF
CT
VR = 0 V, f = 1 MHz
-
35
40
VR = 2.5 V, f = 1 MHz
-
20
-
-
0.27
-
Dynamic resistance3) (tp = 30 ns)
RD
Ω
1V
ESD according to IEC61000-4-2
2I
pp according to IEC61000-4-5
3
according to TLP tests
2
2009-12-07
ESD5V3S1U-02LRH
Power derating curve Ppk = ƒ (TA)
Clamping voltage, V cl = ƒ(Ipp)
tp = 8 / 20 µs
11
110
%
V
80
9
70
V cl
Ppk or Ipp
90
60
8
50
40
7
30
20
6
10
0
0
25
50
75
°C
100
5
0
150
1
2
3
4
TA
A
6
I pp
Forward clamping voltage VFC = ƒ(IPP)
Reverse current IR = ƒ (TA)
tp = 8 / 20 µs
VR = 3.3 V
4
10 -6
V
A
10 -7
2.5
IR
VFC
3
2
1.5
10 -8
1
0.5
0
0
1
2
3
4
5
6
7
A
10 -9
-75
9
Ipp
-50
-25
0
25
50
75
100 °C
150
TA
3
2009-12-07
ESD5V3S1U-02LRH
Breakdown voltage V BR = ƒ(TA)
IR = 1 mA
Diode capacitance CT = ƒ (VR)
f = 1MHz
7.5
40
V
pF
30
CT
V BR
7
6.75
25
6.5
20
6.25
15
6
10
5.75
5
5.5
-75
-50
-25
0
25
50
75
100 °C
0
0
150
TA
1
2
3
4
V
6
VR
4
2009-12-07
ESD5V3S1U-02LRH
Application example
single channel, uni-directional
Connector
Protected signal line
I/O
1
2
The protection diode
should be placed very
close to the location
where the ESD can
occur to keep loops and
inductances as small as
possible.
5
ESD
sensitive
device
2009-12-07
TSLP-2-17 (mm)
ESD5V3S1U-02LRH
Package Outline
Top view
Bottom view
0.39 +0.01
-0.03
0.6 ±0.05
0.05 MAX.
1
1
0.25 ±0.035 1)
2
1±0.05
0.65 ±0.05
2
0.5 ±0.035 1)
Cathode
marking
1) Dimension applies to plated terminal
Foot Print
0.45
Copper
Solder mask
0.375
0.35
0.275
1
0.925
0.3
0.35
0.6
0.275
For board assembly information please refer to Infineon website "Packages"
Stencil apertures
Marking Layout (Example)
BAR90-02LRH
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
0.5
Cathode
marking
8
1.16
4
0.76
6
2009-12-07
ESD5V3S1U-02LRH
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
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Life support devices or systems are intended to be implanted in the human body or
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endangered.
7
2009-12-07
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