ROHM RF601B2D

RF601B2D
Diodes
Fast recovery diodes
RF601B2D
zApplications
General rectification
zExternal dimensions (Unit : mm)
zLand size figure (Unit : mm)
6.0
0.5±0.1
C0.5
1.5±0.3
zFeatures
1) Power mold type. (CPD)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
6.0
2.3±0.2
0.1
1.6
9.5±0.6
5.5±0.3
0.1
1.6
1.5
0.75
2.3 2.3
CPD
2.5
①
3.0 2.0
6.5±0.2
5.1±0.2
0.1
0.9
(2)
(1)
(3)
0.65±0.1
0.5±0.1
zConstruction
Silicon epitaxial planer
zStructure
1.0±0.2
2.3±0.2 2.3±0.2
ROHM : CPD
JEITA : SC-63
①
Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
φ1.55±0.1
0
8.0±0.1
0.4±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
200
200
6
40
150
-55~+150
10.1±0.1
10.1±0.1
φ3.0±0.1
8.0±0.1
0~0.5
6.8±0.1
13.5±0.2
TL
16.0±0.2
7.5±0.05
2.5±0.1
4.0±0.1
2.7±0.2
Unit
V
V
A
A
℃
℃
(*1) Rating of per diode : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Reverse recovery time
Thermal impedance
trr
θjc
Min.
-
Typ.
0.87
0.01
14
-
Max.
0.93
10
25
6.0
Unit
V
µA
ns
℃/W
Conditions
IF=3A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*IR
JUNCTION TO CASE
Rev.B
1/3
RF601B2D
Diodes
zElectrical characteristic curves
10
100
10000
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
0.1
Ta=-25℃
0.01
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0
1
0
100 200 300 400 500 600 700 800 900 1000
50
100
150
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
200
100
Ta=25℃
Ta=25℃
IF=3A
IF=3A
n=30pcs
n=30pcs
REVERSE CURRENT:IR(nA)
880
870
860
AVE:859.4mV
850
AVE:859.4mV
840
Ta=25℃
VR=200V
n=30pcs
80
60
50
40
AVE:4.60nA
AVE:4.60nA
30
20
110
100
90
AVE:99.4pF
80
70
60
50
Ct DISPERSION MAP
IR DISPERSION MAP
1000
8.3ms
150
100
AVE:126.0A
0
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:13.7ns
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
RESERVE RECOVERY TIME:trr(ns)
1cyc
Ifsm
50
120
0
30
200
130
10
300
Ifsm
8.3ms 8.3ms
1cyc
100
10
1
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
1000
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
140
70
VF DISPERSION MAP
250
10
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
150
90
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
890
FORWARD VOLTAGE:VF(mV)
10
0.1
0.001
PEAK SURGE
FORWARD CURRENT:IFSM(A)
f=1MHz
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Ta=150℃
Ta=125℃
100
10
100
Ifsm
t
100
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
Rth(j-a)
8
DC
D=1/2
10
Rth(j-c)
IM=100mA
1
1ms
IF=3A
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Mounted on epoxy board
Sin(θ=180)
6
4
2
time
300us
0.1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3
RF601B2D
Diodes
15
D=1/2
DC
5
Sin(θ=180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
10
VR
D=t/T
VR=100V
T Tj=150℃
t
DC
10
T
VR
D=t/T
VR=100V
Tj=150℃
D=1/2
5
Sin(θ=180)
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
150
No break at 30kV No break at 30kV
25
20
15
10
5
0
0
0
30
Io
0A
0V
Io
0A
0V
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
15
0
25
50
75
100
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
125
150
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1