Fairchild MMPQ3467 Pnp switching transistor Datasheet

TN3467A
MMPQ3467
E
C
B
E
B
E
E
B
TO-226
B
E
C
SOIC-16
B
C
C
C
C
C
C
C
PNP Switching Transistor
This device is designed for high speed saturated switching applications
at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
1.2
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJC
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
 1997 Fairchild Semiconductor Corporation
Max
TN3467A
1.0
8.0
50
Units
MMPQ3467
1.0
8.0
125
125
240
W
mW/°C
°C/W
°C/W
°C/W
°C/W
TN3467A / MMPQ3467
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
I C = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
I C = 10 µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I E = 10 µA, I C = 0
5.0
IBEV
Base-Cutoff Current
VCE = 30 V, VBE = 3.0 V
ICEX
Collector-Cutoff Current
VCE = 30 V, VBE = 3.0 V
100
nA
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150°C
0.01
15
µA
µA
V
120
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat )
Collector-Emitter Saturation Voltage
VBE( sat)
Base-Emitter Saturation Voltage
I C = 150 mA, VCE = 1.0 V
I C = 500 mA, VCE = 1.0 V
I C = 1.0 A, VCE = 5.0 V
I C = 150 mA, IB = 15 mA
I C = 500 mA, IB = 50 mA
I C = 1.0 A, IB = 100 mA
I C = 150 mA, IB = 15 mA
I C = 500 mA, IB = 50 mA
I C = 1.0 A, IB = 100 mA
40
40
40
0.8
120
0.3
0.5
1.0
1.0
1.2
1.6
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
Cobo
Output Capacitance
I C = 50 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 KHz
Cibo
Input Capacitance
VBE = 0.5 V, IC = 0, f = 1.0 KHz
175
MHz
25
pF
100
pF
SWITCHING CHARACTERISTICS (except for MMPQ3467)
td
Delay Time
VCC = 30 V, VBE = 2.0 V,
10
ns
tr
Rise Time
I C = 500 mA, IB1 = 50 mA
30
ns
ts
Storage Time
VCC = 30 V, IC = 500 mA,
60
ns
tf
Fall Time
I B1 = IB2 = 50 mA
30
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
Typical Pulsed Current Gain
vs Collector Current
140
VCE = 1V
120
125 ºC
100
80
25 °C
60
- 40 ºC
40
20
0
0.01
IC
0.1
- COLLECTOR CURRENT (A)
1
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
DC Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
25 °C
0.2
125 ºC
- 40 ºC
0.1
0
10
100
300
I C - COLLECTOR CURRENT (mA)
P 0
1
- 40 ºC
25 °C
0.6
125 ºC
0.4
β = 10
0.2
10
IC
100
- COLLECTOR CURRENT (mA)
1000
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
V CE = 5V
- 40 ºC
0.8
25 °C
0.6
125 ºC
0.4
10
100
I C - COLLECTOR CURRENT (mA)
P 0
P 0
Collector-Cutoff Current
vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA)
VBESAT- BASE-EMITTER VOLTAGE (V)
P 0
0.8
500
6000
V CB = 30V
1000
100
10
1
25
50
75
100
125
T A - AMBIENT TEMPERATURE (ºC)
150
300
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
AC Typical Characteristics
Input / Output Capacitance
vs. Reverse Bias Voltage
Switching Times vs.
Collector Current
Switching Times vs.
Ambient Temperature
Delay Time vs. Turn On Base
Current and Reverse Bias
Emitter Voltage
Rise Time vs. Collector Current
and Turn On Base Current
Turn On / Turn Off Times
vs. Collector Current
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
AC Typical Characteristics
(continued)
Fall Time vs. Turn On
and Turn Off Base Currents
Fall Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On and
Turn Off Base Currents
Storage Time vs. Turn On and
Turn Off Base Currents
TN3467A / MMPQ3467
PNP Switching Transistor
(continued)
(continued)
Gain Bandwidth Product
vs Collector Current
POWER DISSIPATION vs
AMBIENT TEMPERATURE
1
350
PD - POWER DISSIPATION (W)
f T - GAIN BANDWIDTH PRODUCT (MHz)
AC Typical Characteristics
Vce = 5V
300
250
200
150
100
50
0.75
SOT-223
0.5
0.25
0
0
1
10
20
50
100
200
500
TO-226
0
25
50
75
100
o
TEMPERATURE ( C)
IC - COLLECTOR CURRENT (mA)
P 70
Test Circuits
- 30 V
PW = 200 ns
Rise Time ≤ 2.0 ns
Duty Cycle = 2 %
59 Ω
Scope
200 Ω
2.0 V
0
- 10.8 V
FIGURE 1: tON Equivalent Test Circuit
2.0 < t1 < 500 µs
- 30 V
8.8 V
t < 5 ns
2
t3 > 1.0 µs
59 Ω
Duty Cycle = 2%
0
Scope
200 Ω
- 11.2 V
t1
1N916
t2
t3
3.0 V
FIGURE 2: tOFF Equivalent Test Circuit
125
150
TN3467A / MMPQ3467
PNP Switching Transistor
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