Vishay BAS85 Small signal schottky diode Datasheet

BAS85
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage
• The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• This diode is also available in a DO-35
case with type designation BAT85
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
94 9371
Applications
Mechanical Data
• Applications where a very low forward voltage is
required
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
BAS85
Ordering code
Type Marking
Remarks
BAS85-GS18 or BAS85-GS08
-
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Continuous reverse voltage
VR
30
V
Forward continuous current
IF
2001)
mA
IFM
3001)
mA
IFSM
6001)
mA
Ptot
2001)
mW
Symbol
Value
Unit
RthJA
4301)
K/W
Peak forward current
tp < 1 s
Surge forward current
Tamb = 65 °C
Power dissipation
1)
Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Tj
125
°C
Tstg
- 55 to +150
°C
Valid provided that electrodes are kept at ambient temperature.
Document Number 85510
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS85
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Test condition
Symbol
Min.
IR = 10 µA (pulsed)
V(BR)
30
VR = 25 V
IR
Pulse test tp < 300 µs,
IF = 0.1 mA
Leakage current
Typ.
Max.
Unit
V
2
µA
VF
240
mV
Pulse test tp < 300 µs, IF = 1 mA
VF
320
mV
Pulse test tp < 300 µs,
IF = 10 mA
VF
400
mV
Pulse test tp < 300 µs,
IF = 30 mA
VF
Pulse test tp < 300 µs,
IF = 100 mA
VF
800
mV
VR = 1 V, f = 1 MHz
CD
10
pF
IF = 10 mA, IR = 10 mA,
Irr = 1 mA,
trr
5
ns
Forward voltage
Diode capacitance
Reverse recovery time
0.2
500
mV
Typical Characteristics
1000
200
VR = 30 V
180
160
140
RthJA = 540 kW
120
PR - Limit
at 100 % VR
100
80
PR - Limit
at 80 % VR
60
40
VR = VRRM
100
10
20
1
0
25
15822
50
75
100
125
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
www.vishay.com
2
IR - Reverse Current (µA)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
25
150
15823
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
For technical questions within your region, please contact one of the following: Document Number 85510
[email protected], [email protected], [email protected]
Rev. 1.9, 05-Aug-10
BAS85
Vishay Semiconductors
10
Tj = 125 °C
CD - Diode Capacitance (pF)
IF - Forward Current (mA)
1000
100
Tj = 25 °C
10
1
f = 1 MHz
9
8
7
6
5
4
3
2
1
0
0.1
0
15824
0.5
1.0
0.1
1.5
VF - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
15825
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): MiniMELF SOD-80
1.6 (0.063)
1.4 (0.055)
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.49) min.
2 (0.079) min.
2.5 (0.098) max.
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Document Number 85510
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Revision: 12-Mar-12
1
Document Number: 91000
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