ASI MRF466 Npn silicon rf power transistor Datasheet

MRF466
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .380 4L FLG
The ASI MRF466 is Designed for
power amplifier applications from 2.0
to 30MHz.
B
.112 x 45°
A
E
C
FEATURES:
Ø.125 NOM.
FULL R
J
.125
B
• PG = 15 dB min. at 40 W/30 MHz
• IMD3 = -30 dBc max. at 40 W (PEP)
• Omnigold™ Metalization System
E
C
D
E
F
G
H I
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
65 V
B
.785 / 19.94
C
.720 / 18.29
.730 / 18.54
35 V
D
.970 / 24.64
.980 / 24.89
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
IC
6.0 A
VCBO
VCEO
PDISS
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.0 °C/W
.385 / 9.78
E
175 W @ TC = 25 °C
TJ
SYMBOL
.180 / 4.57
.280 / 7.11
I
.240 / 6.10
J
CHARACTERISTICS
MAXIMUM
.255 / 6.48
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 100 mA
35
V
BVCES
IC = 100 mA
65
V
BVEBO
IE = 1.0 mA
4.0
V
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
GPE
VCE = 28 V
η
POUT = 40 W (PEP)
IC = 0.5 A
10
f = 1.0 MHz
ICQ = 20 mA
f = 30 MHz
125
15
5
mA
80
---
200
pF
19
dB
40
%
-40
IMD3
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
-30
dBc
REV. A
1/1
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