Vishay IRF9510S Power mosfet Datasheet

IRF9510S, SiHF9510S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) ()
VGS = - 10 V
1.2
Qg (Max.) (nC)
8.7
Qgs (nC)
2.2
Qgd (nC)
4.1
Configuration
Single
S
DESCRIPTION
D2PAK (TO-263)
G
G D
D
S
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D2PAK (TO-263)
SiHF9510S-GE3
IRF9510SPbF
SiHF9510S-E3
D2PAK (TO-263)
SiHF9510STRL-GE3a
IRF9510STRLPbFa
SiHF9510STL-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
SYMBOL
VDS
VGS
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Currenta
ID
IDM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
EAS
Single Pulse Avalanche Energyb
IAR
Avalanche Currenta
EAR
Repetiitive Avalanche Energya
Maximum Power Dissipation
TC = 25 °C
PD
TA = 25 °C
Maximum Power Dissipation (PCB Mount)e
dV/dt
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 , IAS = - 4.0 A (see fig. 12).
c. ISD  - 4.0 A, dI/dt  75 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 100
± 20
- 4.0
- 2.8
- 16
0.29
0.025
200
- 4.0
4.3
43
3.7
- 5.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91073
S11-1050-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510S, SiHF9510S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
PARAMETER
RthJA
-
62
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
3.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VDS
VGS = 0, ID = - 250 μA
- 100
-
-
V
VDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.091
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 μA
- 2.0
-
- 4.0
V
nA
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
-
-
± 100
VDS = - 100 V, VGS = 0 V
-
-
- 100
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
-
-
1.2

1.0
-
-
S
-
200
-
-
94
-
-
18
-
-
-
8.7
-
-
2.2
ID = - 2.4 Ab
VGS = - 10 V
VDS = - 50 V, ID = - 2.4
Ab
μA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 4.0 A, VDS = - 80 V,
see fig. 6 and 13b
pF
nC
Gate-Drain Charge
Qgd
-
-
4.1
Turn-On Delay Time
td(on)
-
10
-
-
27
-
-
15
-
-
17
-
-
4.5
-
-
7.5
-
-
-
- 4.0
-
-
- 16
-
-
- 5.5
V
-
82
160
ns
-
0.15
0.30
μC
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = - 50 V, ID = - 4.0 A,
Rg = 24 , RD = 11 , see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
ns
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 4.0 A, VGS = 0 Vb
TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Document Number: 91073
S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510S, SiHF9510S
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
101
VGS
- 15 V
- 10 V
1
10
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
- 4.5 V
- ID, Drain Current (A)
- ID, Drain Current (A)
Top
25 °C
175 °C
100
20 µs Pulse Width
TC = 25 °C
100
101
4
- VDS, Drain-to-Source Voltage (V)
91073_01
20 µs Pulse Width
VDS = - 50 V
4.5 V
100
20 µs Pulse Width
TC = 150 °C
100
91071_02
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Document Number: 91073
S11-1050-Rev. C, 30-May-11
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain Current (A)
101
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
6
- VGS, Gate-to-Source Voltage (V)
91073_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
5
91071_04
3.0
2.5
ID = 8.0 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510S, SiHF9510S
350
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
280
Ciss
210
140
Coss
70
Crss
- ISD, Reverse Drain Current (A)
Vishay Siliconix
101
175 °C
0
100
101
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
VDS = 400 V
VDS = 100 V
8
4
For test circuit
see figure 13
0
0
91071_06
15
30
45
60
QG, Total Gate Charge (nC)
10 µs
2
10
100 µs
5
1 ms
2
1
10 ms
5
TC = 25 °C
TJ = 150 °C
Single Pulse
2
0.1
0.1
75
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Operation in this area limited
by RDS(on)
5
VDS = 250 V
5.0
4.0
- VSD, Source-to-Drain Voltage (V)
102
16
3.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 8.0 A
12
2.0
91073_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
VGS = 0 V
10-1
1.0
- VDS, Drain-to-Source Voltage (V)
91073_05
25 °C
100
91071_08
2
5
1
2
5
10
2
5
102
2
5
103
2
5
104
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91073
S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510S, SiHF9510S
Vishay Siliconix
RD
VDS
VGS
- ID, Drain Current (A)
4.0
D.U.T.
Rg
3.0
+VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2.0
Fig. 10a - Switching Time Test Circuit
1.0
td(on)
td(off) tf
tr
VGS
0.0
10 %
25
50
75
100
125
150
175
TC, Case Temperature (°C)
91073_09
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
D = 0.5
1
0.2
0.1
PDM
0.05
0.02
0.01
0.1
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91073_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T.
Rg
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91073
S11-1050-Rev. C, 30-May-11
VDD
tp
- 10 V
tp
+ V DD
VDS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510S, SiHF9510S
Vishay Siliconix
EAS, Single Pulse Energy (mJ)
700
ID
- 1.6 A
- 2.8 A
Bottom - 4.0 A
Top
600
500
400
300
200
100
0
VDD = - 25 V
25
91073_12c
50
75
100
125
175
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Fig. 13b - Gate Charge Test Circuit
Document Number: 91073
S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9510S, SiHF9510S
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91073.
Document Number: 91073
S11-1050-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Similar pages