MCC BC556B Pnp silicon amplifier transistor 625mw Datasheet

MCC
BC556,B
BC557,A,B,C
BC558,B
omponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
150oC Junction Temperature
Through Hole Package
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking:Type Number
PNP Silicon
Amplifier Transistor
625mW
TO-92
A
Mechanical Data
E
Case: TO-92, Molded Plastic
Polarity: indicated as below.
B
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
BC556
BC557
BC558
BC556
BC557
BC558
Collector-Base Voltage
Emitter-Base Voltage
Symbol Value
-65
VCEO
-45
-30
-80
VCBO
-50
-30
VEBO
-5.0
Collector Current(DC)
IC
Power Dissipation@TA=25oC
Pd
o
Pd
Power Dissipation@TC=25 C
C
V
V
D
V
mA
mW
mW/oC
W
mW/oC
12
G
3
1-Collector
2-Base
3-Emitter
DIMENSIONS
Thermal Resistance, Junction to
Ambient Air
R JA
Thermal Resistance, Junction to
Case
R JC
Operating & Storage Temperature
-100
625
5.0
1.5
12
Unit
200
83.3
Tj, TSTG -55~150
o
C/W
o
C/W
o
C
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.096
MM
MAX
.190
.190
.590
.020
.160
.104
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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Revision: A
1 of 5
2011/01/01
MCC
BC556 thru BC558B
TM
Micro Commercial Components
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
I CBO
—
—
-100
nA
–65
–45
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
—
120
120
120
120
180
420
—
—
—
90
150
270
—
—
—
170
290
500
120
180
300
—
—
—
500
800
800
220
460
800
—
—
—
—
---
–0.3
—
—
–1.0
–0.55
—
–0.62
–0.7
–0.7
–0.82
150
150
150
280
320
360
—
—
—
—
3.0
6.0
OFF CHARACTERISTICS
Collector Cut-off Current
(VCB = –70 V, IE = 0)
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 µAdc)
Emitter – Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)CEO
BC556
BC557
BC558
V
V(BR)CBO
BC556
BC557
BC558
V
V(BR)EBO
BC556
BC557
BC558
V
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 V)
(IC = –2.0 mAdc, VCE = –5.0 V)
(IC = –100 mAdc, VCE = –5.0 V)
hFE
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C
Collector – Emitter Saturation Voltage
(IC = –100mAdc, IB = –5.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0mAdc)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz)
Cob
MHz
pF
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Revision: A
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2011/01/01
MCC
BC556 thru BC558B
TM
Micro Commercial Components
BC557/BC558
–1.0
TA = 25°C
–0.9
VCE = –10 V
TA = 25°C
1.5
VBE(sat) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
VCE(sat) @ IC/IB = 10
–0.1
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
0
–0.1 –0.2
–100 –200
Figure 1. Normalized DC Current Gain
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
–1.6
–1.2
IC =
–10 mA
IC = –50 mA
IC = –200 mA
IC = –100 mA
IC = –20 mA
–0.4
–0.02
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–10 –20
–0.1
–1.0
IB, BASE CURRENT (mA)
–0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 4. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
–100
1.0
TA = 25°C
0
–50
Figure 2. “Saturation” and “On” Voltages
–2.0
–0.8
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
400
300
200
150
VCE = –10 V
TA = 25°C
100
80
60
40
30
20
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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Revision: A
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2011/01/01
MCC
BC556 thru BC558B
TM
Micro Commercial Components
BC556
TJ = 25°C
VCE = –5.0 V
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
–1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
VCE(sat) @ IC/IB = 10
0
–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.1 –0.2
–0.5
–50 –100 –200
–1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–2.0
–1.0
–1.6
–1.2
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–0.8
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
–20
–1.4
–1.8
–2.6
–3.0
–0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 10. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
–55°C to 125°C
–2.2
Figure 9. Collector Saturation Region
40
θVB for VBE
–50 –100
500
VCE = –5.0 V
200
100
50
20
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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Revision: A
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2011/01/01
MCC
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-AP
Ammo Packing: 2Kpcs/Ammo Box
Part Number-BP
Bulk: 100Kpcs/Carton
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