BCD AZ386P Low voltage audio power amplifier Datasheet

Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
General Description
Features
The AZ386 is a power amplifier designed for use in
low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the
addition of an external resistor and capacitor between
pin 1 and pin 8 will increase the gain to any value from
20 to 200.
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The inputs are ground referenced while the output
automatically biases to one-half the supply voltage.
The quiescent power drain is only 24mW when operating from a 5V supply, making the AZ386 ideal for
battery operation.
Wide Supply Voltage Range: 4V to 16V
Low Quiescent Current Drain: 6mA
Voltage Gains from 20 to 200
Battery Operation
Minimum External Parts
Low Power Dissipation
Low Distortion
Applications
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This IC is available in SOIC-8 and DIP-8 packages.
SOIC-8
AM-FM Radio Amplifier
Cordless Phone
TV Sound Systems
Portable Tape Player Amplifier
Intercoms
Line Drivers
Ultrasonic Drivers
Small Servo Drivers
Power Converters
DIP-8
Figure 1. Package Types of AZ386
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
1
Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Pin Configuration
M Package/P Package
(SOIC-8/DIP-8)
GAIN
1
8
GAIN
INPUT -
2
7
BYPASS
INPUT +
3
6
VCC
GND
4
5
VOUT
Top View
Figure 2. Pin Configuration of AZ386
Functional Block Diagram
GAIN
GAIN
8
1
6
VCC
15KΩ
7
BYPASS
15KΩ
5
150Ω
VOUT
15KΩ
1.35KΩ
2
INPUT -
50KΩ
50KΩ
4
GND
3
INPUT +
Figure 3. Functional Block Diagram of AZ386
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Ordering Information
AZ386
-
Circuit Type
E1: Lead Free
Blank: Tin Lead
Package
TR: Tape and Reel
Blank: Tube
M: SOIC-8
P: DIP-8
Package
Temperature
Range
SOIC-8
0 to 70oC
DIP-8
o
0 to 70 C
Part Number
Tin Lead
Marking ID
Lead Free
Tin Lead
Lead Free
Packing Type
AZ386M
AZ386M-E1
386M
386M-E1
Tube
AZ386MTR
AZ386MTR-E1
386M
386M-E1
Tape & Reel
AZ386P
AZ386P-E1
AZ386P
AZ386P-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Symbol
Value
Unit
VCC
18
V
AZ386P
1.25
W
AZ386M
0.73
W
Package Dissipation (Note 2)
PD
Input Voltage
VIN
-0.4 to 0.4
V
TJ
150
o
TSTG
-55 to 150
o
C
o
C
Junction Temperature
Storage Temperature Range
Soldering Information
Thermal Resistance
θJA
DIP-8 Soldering
(10 sec.)
260
SOIC-8 (15 sec.)
215
DIP-8
107
SOIC-8
172
C
oC/W
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings" for extended periods may affect device reliability.
Note 2: For operation in ambient temperatures (TA) above 25oC, the device must be derated based on a 150oC
maximum junction temperature and 1) a thermal resistance of 107oC/W junction to ambient for the Dual-in-Line
package and 2) a thermal resistance of 172oC/W for the small outline package.
Recommended Operating Conditions
Parameter
Operating Temperature Range
Min
Max
0
70
Unit
o
C
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Electrical Characteristics (Note 3)
Operating Conditions: TA=25oC unless otherwise specified.
Parameter
Supply Voltage
Quiescent Current
Output Power
Symbol
Test Conditions
Min
VCC
IQ
POUT
Typ
4
VCC=6V, VIN=0
6
Max
Unit
16
V
8
mA
VCC=6V, RL=8Ω, THD=10%
250
300
mW
VCC=9V, RL=8Ω, THD=10%
500
800
mW
VCC=16V, RL=32Ω, THD=10%
700
1000
mW
Voltage Gain
GV
VCC=6V, f=1KHz
10µF from Pin 1 to 8
26
dB
45
dB
Bandwidth
BW
VCC=6V, Pins 1 and 8 open
500
KHz
Total Harmonic Distortion
THD
VCC=6V, RL=8Ω, POUT=125mW
f=1KHz, Pins 1 and 8 open
0.27
Power Supply Rejection Ratio
PSRR
VCC=6V, f=1KHz, CBYPASS=10µF,
Pins 1 and 8 open, Referred to Output
Input Resistance
Input Bias Current
RIN
IBIAS
VCC=6V, Pins 2 and 3 open
45
%
dB
70
KΩ
10
nA
Note 3: All voltages are measured with respect to the ground pin, unless otherwise specified.
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Typical Performance Characteristics
16
Output Voltage (V) (peak to peak)
8
Supply Current (mA)
7
6
5
AZ386
4
3
2
14
12
10
8
6
AZ386 RL=4Ω
AZ386 RL=8Ω
AZ386 RL=16Ω
AZ386 RL=32Ω
4
2
0
1
4
6
8
10
12
14
16
4
18
5
6
7
8
Supply Voltage (V)
60
1.2
50
1.0
40
0.8
30
20
11
12
13
14
15
16
AZ386
VCC=6V RL=8Ω POUT=125mW C1,8=0
0.6
0.4
AZ386 C1,8=0
AZ386 C1,8=10u
0.2
10
0
100
1k
10k
100k
0.0
10
1M
100
Frequency (Hz)
Figure 6. Voltage Gain vs. Frequency
2.0
9
1.8
Device Dissipation (W)
AZ386
VCC=6V RL=8Ω f=1KHz
7
6
5
4
1.6
1.4
0.4
1
0.2
0.0
0.0
0
100
1,000
AZ386 VCC=12V
AZ386 VCC=9V
AZ386 VCC=6V
RL=4Ω
0.8
2
Power Out (mW)
10k
1.0
0.6
10
1k
1.2
3
1
Frequency (Hz)
Figure 7. Distortion vs. Frequency
10
8
THD (%)
10
Figure 5. Peak-to-Peak Output Voltage
Swing vs. Supply Voltage
THD (%)
Voltage Gain (dB)
Figure 4. Quiescent Supply Current vs.
Supply Voltage
9
Supply Voltage (V)
0.1
0.2
0.3
0.4
0.5
Output Power (W)
Figure 9. Device Dissipation vs. Output Power
(4Ω Load)
Figure 8. Distortion vs. Output Power
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Typical Performance Characteristics (Continued)
2.0
0.8
Device Dissipation (W)
Device Dissipation (W)
1.6
1.4
1.0
AZ386 VCC=16V
AZ386 VCC=12V
AZ386 VCC=9V
AZ386 VCC=6V
1.8
RL=8Ω
1.2
1.0
0.8
0.6
0.4
0.6
0.4
AZ386 VCC=16V
AZ386 VCC=12V
AZ386 VCC=9V
AZ386 VCC=6V
RL=16Ω
0.2
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0
0.0
1.0
0.2
0.4
0.6
0.8
Output Power (W)
1.0
1.2
1.4
1.6
1.8
2.0
Output Power (W)
Figure 10. Device Dissipation vs. Output Power
(8Ω Load)
Figure 11. Device Dissipation vs. Output Power
(16Ω Load)
Typical Applications
VCC
10µF
VCC
+
6
6
2 -
2
8
250µF
8
VIN
10KΩ
AZ386
3
1
-
1
+
5
10KΩ
0.05µF
+
AZ386
VIN
3
4
10Ω
Figure 12. Amplifier With Gain=20
+
5
0.05µF
7
+
7
4
250µF
BYPASS
10Ω
Figure 13. Amplifier With Gain=200
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Typical Applications (Continued)
VCC
VCC
1.2KΩ
10µF
2 -
1
VIN
AZ386
7
3
0.01µF
+
0.05µF
47KΩ
BYPASS
10Ω
10Ω
Figure 14. Amplifier With Gain=50
0.01µF
Figure 15. Low Distortion Power Wienbridge Oscillator
VCC
VCC
6
2
6
AZ386
10KΩ
3
+
8
50µF
+
AZ386
250µF V
O
VO
5
+
3
5
0.05µF
+
7
RL
4
7
4
1
0.1µF
1
VIN
30KΩ
-
0.033µF
10KΩ
8
-
RL
7
4.7KΩ
2
VO
5
0.05µF
BYPASS
4
+
+
AZ386
3V - 15mA
5
+
50µF
8
250µF
8
10KΩ
10µF
1
-
3
6
ELDEMA
CF-S-2158
6
2
390Ω
+
+
10Ω
RL
10KΩ
1KΩ
f = 1KHz
Figure 16. Amplifier With Bass Boost
Figure 17. Square Wave Oscillator
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Mechanical Dimensions
SOIC-8
4.700(0.185)
5.100(0.201)
7°
Unit: mm(inch)
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
φ 0.800(0.031)
0.300(0.012)
R0.150(0.006)
0.100(0.004)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.330(0.013)
0.190(0.007)
0.250(0.010)
1°
5°
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.450(0.017)
0.800(0.031)
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
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Data Sheet
AZ386
LOW VOLTAGE AUDIO POWER AMPLIFIER
Mechanical Dimensions (Continued)
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
6°
5°
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
0.254(0.010)TYP
2.540(0.100) TYP
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
BCD Semiconductor Manufacturing Limited
Oct. 2006 Rev. 1. 3
10
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