Panasonic AN22011A 3-beam md system pre-amplifier Datasheet

ICs for MD System
AN22011A
3-beam MD system pre-amplifier
■ Overview
■ Features
Unit: mm
9.00±0.20
7.00±0.10
25
36
24
7.00±0.10
9.00±0.20
(0.75)
37
0.50
12
0.20±0.05
(1.00)
0.10
0.10 M
0.10+0.10
-0.05
1
(0.75)
(1.00)
1.20 max.
13
48
0.15±0.05
The AN22011A incorporates such functions as RF
signal processing, servo signal processing, ADIP signal
processing and laser control. This is an RF IC that can
constitute the MD system using 3-beam pick-up in combination with the digital signal processing LSI MN66621.
The IC allows us to achieve a considerable low power
dissipation as well as its low supply voltage operation
(VCC = 2.1 V to 3.6 V) due to our introduction of digital
matrix (PD = 11 mW at VCC = 2.1 V). The IC can be used
in a wide range of applications from a stand-alone system
to a portable system.
Seating plane
0° to 8°
0.50±0.10
• 3-beam system pick-up
• RF signal processing
• Servo signal processing
• Laser power control function
• Low supply voltage operation (2.1 V to 3.6 V)
• Ultra low power consumption (min. 11 mW)
• Thin package adopted (Mold thickness: 1 mm)
TQFP048-P-0707B (Lead-free package)
■ Applications
• MD player/recorder
• Home audio systems/mini systems
• Portable audio
• Car audio
Publication date: June 2002
SDD00024AEB
1
2
SDD00024AEB
Pickup
PD
PD
Laser
IV
PD
PD
IV
PD
PD
PD
PD
PD
Pickup
42
VREF
47
48
F
E
46
45
44
1
2
VREF
LDON
VCC
VREF
VREF
VREF
35
34
33
32
3
4
LPF
3 tap
3 tap
SW
3 tap
3 tap
3 tap
3 tap
5
LDON
MONIOFF
NRFSTBY
CLV2
36
VREF
VREF
41
D
RF1
40
C
43
39
B
RF2
38 VREF
37
A
Thermistor
resistance
7
28
8
AGC
9
NRFSTBY
VREF
VREF
EQ
VREF
6
29
Switch
30
Switching signal
31
GND2
26
CLV2
25
10
12
GND1
11
Peak detector
Bottom detector
3Tenv
MONIOFF
Band gap
× 2 BPF
× 1 BPF
27
13
14
15
16
17
18
19
20
21
22
23
24
VCC
VCC
VREF
Servo LSI
Microcomputer
AN22011A
■ Block Diagram
AN22011A
■ Pin Descriptions
Pin No. Symbol
Description
1
LDO
LD amplifier output pin
2
LDIN
LD amplifier reverse input pin
Pin No. Symbol
26
Description
OFSON Te stray light canceling operation
setting pin
3
APCPD Photo diode light quantity detector pin
27
4
APCREF APC amplifier reference voltage input pin
28
NREC
Rec/playback switching signal input pin
RFSWHL Reflection ratio H/L switching signal
input pin
5
ARFO
RF amplifier output pin
6
N.C.

29
7
EQIN
EQ input pin
30
GND2
N.C.
8
CRFAGC RFAGC capacitor pin
31
9
OUTRF EFM output pin
32
RFSWPG Pit/Grv switching signal input pin
GND pin 2

MONIOFF 3TMON circuit control signal input pin

33
CLV2
ADIP BPF switching signal input pin
PEAK
EFM bright level detection output pin
34
LDON
APC circuit control signal input pin
12
GND1
GND pin 1
35
13
BOTM
EFM dark level detection output pin
36
14
CEA
3T envelope detection capacitor pin
37
10
N.C.
11
15
MON3T 3T envelope output pin
NRFSTBY Standby control signal input pin
TEMP
Temperature sensor amplifier output pin
TEMPIN Temperature sensor amplifier input pin
38
A
A signal input pin
16
EE
E signal I-V converting output pin
39
B
B signal input pin
17
FF
F signal I-V converting output pin
40
C
C signal input pin
18
VCC
VCC pin
41
D
D signal input pin
19
OFSIN
Te stray light canceling pin
42
VREF
Reference signal output pin
20
N.C.

43
RF2
RF2 signal input pin
21
FF2
(A + C) signal I-V converting output pin
44
RF1
RF1 signal input pin
22
FF1
(B + D) signal I-V converting output pin
45
N.C.

23
N.C.

46
N.C.

24
N.C.

47
F
F signal input pin
25
ADIP
ADIP signal output pin
48
E
E signal input pin
■ Absolute Maximum Ratings
Parameter
Supply voltage
Supply current
Setting pin upper limit
Power dissipation
*2
*1
Operating ambient temperature
Storage temperature
*1
*1
Symbol
Rating
Unit
VCC
4.0
V
ICC
7.5
mA
VINH
3.6
V
PD
30
mW
Topr
−30 to +85
°C
Tstg
−55 to +125
°C
Note) *1: Except for power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: Setting pin refers to OFSON (pin 26), NREC (pin 27), RFSWHL (pin 28), RFSWPG (pin 29), MONIOFF (pin 32),
CLV2 (pin 33), LDON (pin 34), NRFSTBY (pin 35).
SDD00024AEB
3
AN22011A
■ Recommended Operating Range
Parameter
Supply voltage
Symbol
Range
Unit
VCC
2.1 to 3.6
V
■ Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
No load consumption current 1
ITOTAL1
Normal mode
4.5
5.5
6.5
mA
No load consumption current 2
ITOTAL2
Sleep mode
200
300
400
µA
VREF offset
∆VOVB
Normal mode
−50
0
50
mV
ZVB
I42 = ±1.5 mA


5
Ω
VLDOFF
APC OFF mode


0.2
V
LD amplifier gain playback mode
GLDP
APC ON mode
−23
−20
−17
dB
LD amplifier gain recording mode
GLDR
APC ON mode
−5.5
−2.5
0.5
dB
Temperature amplifier gain
GTM
V37 = VREF ± 0.75 V
−2
0
2
dB
FF1 offset
∆VF1
Pit high reflection ratio mode
−100
0
100
mV
FF2 offset
∆VF2
Pit high reflection ratio mode
−100
0
100
mV
FF1 gain
pit high reflection ratio mode
ZFIRO
Pit high reflection ratio mode
46.2
57.7
69.2
kΩ
FF1 gain
pit low reflection ratio mode
ZFIRA
Pit low reflection ratio mode
197
250
303
kΩ
FF1 gain record mode
ZFIRE
Record mode
17.5
21.9
26.3
kΩ
VREF output impedance
LD amplifier OFF operation
FF2 relative gain
pit high reflection ratio mode
∆ZF2RO
Pit high reflection ratio mode
−2
0
2
dB
FF2 relative gain
pit low reflection ratio mode
∆ZF2RA
Pit low reflection ratio mode
−2
0
2
dB
FF2 relative gain record mode
∆ZF2RE
Record mode
−2
0
2
dB
FF1 frequency characteristic
∆GF1
Pit high reflection ratio mode
V38: 3 kHz, 30 kHz Sine wave
−9
−6
−3
dB
FF2 frequency characteristic
∆GF2
Pit high reflection ratio mode
V39: 3 kHz, 30 kHz Sine wave
−9
−6
−3
dB
EE offset
∆VEE
Pit high reflection ratio mode
−750
−600
−450
mV
FF offset
∆VFF
Pit high reflection ratio mode
−750
−600
−450
mV
EE gain
pit high reflection ratio mode
ZEERO
Pit high reflection ratio mode
148
185
222
kΩ
EE gain
pit low reflection ratio mode
ZEERA
Pit low reflection ratio mode
776
970
1 164
kΩ
EE gain record mode
ZEERE
Record mode
88
110
132
kΩ
FF relative gain
pit high reflection ratio mode
∆ZFFRO
Pit high reflection ratio mode
−2
0
2
dB
FF relative gain
pit low reflection ratio mode
∆ZFFRA
Pit low reflection ratio mode
−2
0
2
dB
4
SDD00024AEB
AN22011A
■ Electrical Characteristics at Ta = 25°C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Record mode
−2
0
2
dB
FF relative gain record mode
∆ZFFRE
EE frequency characteristics
∆GEE
Pit high reflection ratio mode
V48: 1.5 kHz, 15 kHz Sine wave
−6
−3
− 0.5
dB
FF frequency characteristics
∆GFF
Pit high reflection ratio mode
V47: 1.5 kHz, 15 kHz Sine wave
−6
−3
− 0.5
dB
Ram mode
Stray light canceling mode
0.4
0.5
0.6

Te stray light canceling operation
∆TOFS
ADIP gain
GAD1
Record mode
Line double speed mode
24.0
27.0
30.0
dB
ADIP center frequency
FAD1
Record mode
Line double speed mode
35.2
44.0
52.8
kHz
ADIP band width
∆FAD1
Record mode
Line double speed mode
23.7
29.6
35.5
kHz
ADIP relative gain typical
speed mode
∆GAD2
Record mode
Typical speed mode
−3
0
3
dB
RF amplifier gain
groove mode
GRFG
V43: 100 kHz Sine wave
Groove mode
19
22
25
dB
RF amplifier gain
pit low reflection ratio mode
GRFPL
V43: 100 kHz Sine wave
Pit low reflection ratio mode
3
6
9
dB
RF amplifier gain
pit high reflection ratio mode
GRFPH
V43: 100 kHz Sine wave
Pit high reflection ratio mode
−11.5
−8.5
−5.5
dB
RF amplifier frequency characteristics ∆GRFG
groove mode
V43: 5 MHz Sine wave
Groove mode
−3


dB
RF amplifier frequency characteristics ∆GRFPL
pit low reflection ratio mode
V43: 5 MHz Sine wave
Pit low reflection ratio mode
−3


dB
RF amplifier frequency characteristics ∆GRFPH
pit high reflection ratio mode
V43: 5 MHz Sine wave
Pit high reflection ratio mode
−3


dB
V7: 400 kHz, 1.44 MHz Sine wave
V8 = VREF
2.5
3.5
4.5
dB
V7: 500 kHz Sine wave
0.4
0.5
0.6
V[p-p]
−140
−110
−80
µA
0.1
0.4
0.7
µA
−200
0
200
mV
80
110
−200
0
200
mV
EFM bottom detecting relative level ∆VBOTM V7: 720 kHz AM modulation
Sine wave (1 kHz, 30%)
−20
0
20
mV[p-p]
3T element envelope
extracting level
125
185
EQ boost gain
∆GEQ
AGC operation
VOMRFV
AGC discharge current
IAGC1
V7: sin 500 mV[p-p], 720 kHz
V8 = VREF
AGC charging current
IAGC2
V7 = VREF, V8 = VREF
EFM Peak peak detecting offset
∆VPE
V7 = VREF
EFM Peak peak detecting level
VPEAK
V7: 720 kHz AM modulation
Sine wave (1 kHz, 30%)
EFM bottom detecting offset
∆VBO
V7 = VREF
V3TMON
V7: 720 kHz AM modulation
Sine wave (5 kHz, 5%)
SDD00024AEB
140 mV[p-p]
245 mV[p-p]
5
AN22011A
■ Usage Notes
1. Operation mode setting
• Gain switch setting
NREC (Pin27)
RFSWHL (Pin28) RFSWPG (Pin29)
Operation mode
H
H
H
Pit high reflection ratio mode
H
L
H
Pit low reflection ratio mode
H
L
L
Groove mode
L
L
L
Record mode
• 3T detection circuit mode switch setting
MONIOFF (Pin32)
Operation mode
H
3T detection circuit off
L
3T detection circuit on
• ADIP BPF mode switch setting
CLV2 (Pin33)
Operation mode
BPF center frequency
H
Typical speed mode
fO = 22.0 kHz
L
Line double speed mode
fO = 44.0 kHz
Note) The values shown on the list are for design purpose.
• APC mode setting
LDON (Pin34)
Operation mode
H
APC circuit on
L
APC circuit off
• Power saving mode setting
NRFSTBY (Pin35)
Operation mode
H
Normal operation
L
Power saving operation
• Te stray light cancellation setting
OFSON (Pin26)
Operation mode
H
Cancellation circuit on
L
Cancellation circuit off
Note) This function is valid only for reading on the writable disk.
6
SDD00024AEB
AN22011A
■ Usage Notes (continued)
2. Setting pin input voltage
Set the input voltages for OFSON (Pin26), NREC (Pin27), RFSWHL (Pin28), RFSWPG (Pin29), MONIOFF
(Pin32), CLV2 (Pin33), LDON (Pin34) and NRFSTBY (Pin35). As listed below.
Setting
Input voltage
H
1.4 V to 3.6 V
L
0.7 V or less
The related equivalent circuits are as follows.
OFSON
160 kΩ
33 kΩ
NREC
RFSWHL
RFSWPG
CLV2
MONIOFF
22.8 kΩ
100 kΩ
NRFSTBY
200 kΩ
LDON
60 kΩ
60 kΩ
33 kΩ
1 kΩ
140 kΩ
140 kΩ
100 kΩ
Note) The resistance values are for designing.
SDD00024AEB
7
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY
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