DIGITRON SEMICONDUCTORS MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage (TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open) MCR12LD MCR12LM MCR12LN Value Unit 400 600 800 V 12 A (1) VDRM VRRM On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C) Forward average gate power (t = 8.3ms, TC = 80°C) A 100 41 A2s PGM 5.0 W PG(AV) 0.5 W Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C) IGM 2.0 A Operating temperature range TJ -40 to +125 °C Tstg -40 to +150 °C Storage temperature range Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 2.2 °C/W Thermal resistance, junction to ambient RӨJA 62.5 °C/W Maximum lead temperature for soldering purposes 1/8” from case for 10s TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max - - 0.01 2.0 - - 2.2 2.0 4.0 8.0 4.0 10 20 6.0 12 30 0.5 0.65 0.8 100 250 - - - 50 Unit OFF CHARACTERISTICS Peak forward or reverse blocking current (VD = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak on-state voltage* (ITM = 24A) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT Holding current (VD = 12V, gate open, initiating current = 200mA) IH Latch current (VD = 12V, Ig = 20mA) IL Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT V mA mA mA V DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt Critical rate of rise of on-state current (IPK = 50A, Pw = 40µsec, diG/dt = 1A/µs, Igt = 50mA) di/dt * Pulse width ≤ 1.0ms, duty cycle ≤ 2%. 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130108 V/µs A/µs DIGITRON SEMICONDUCTORS MCR12LD, MCR12LM, MCR12LN SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case TO-220AB Marking Alpha-numeric Pin out See below 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130108 DIGITRON SEMICONDUCTORS MCR12LD, MCR12LM, MCR12LN 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 SILICON CONTROLLED RECTIFIERS [email protected] www.digitroncorp.com Rev. 20130108 DIGITRON SEMICONDUCTORS MCR12LD, MCR12LM, MCR12LN 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 SILICON CONTROLLED RECTIFIERS [email protected] www.digitroncorp.com Rev. 20130108