ROHM RB530S-30

Schottky barrier Diode
RB530S-30
Applications
General rectification
Land size figure (Unit : mm)
Dimensions (Unit : mm)
0.6
0.8
1.7
Features
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
EMD2
Construction
Silicon epitaxial planer
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (DC)
VR
Average rectified forward current
Io
Forward current surge peak (60Hz/1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electical characteristics (Ta=25C)
Parameter
Forward voltage
Reverse current
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Symbol
VF
IR
Limits
30
100
500
125
-40 to +125
Min.
-
1/3
Typ.
-
Unit
V
mA
mA
C
C
Max.
0.45
0.5
Unit
V
μA
Conditions
IF=10mA
VR=10V
2010.02 - Rev.A
RB530S-30
Data Sheet
Electical characteristics curves
100
1000000
1000
10
Ta=75C
1
Ta=-25C
0.1
Ta=25C
0.01
Ta=75C
10000
1000
Ta=25C
100
10
Ta=-25C
1
200
300
400
500
0
600
370
Ta=25C
VF=10mA
n=30pcs
1
30
0
5
350
340
AVE : 347.5mV
330
800
700
600
500
400
300
AVE : 108.3nA
200
19
17
16
15
AVE : 16.28pF
14
13
12
11
0
10
IR DISPERSION MAP
Ct DISPERSION MAP
8.3ms
10
AVE : 4.20A
5
10
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1cyc
Ifsm
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
15
Ifsm
8.3ms
8.3ms
1cyc
5
0
0
Ifsm
t
5
0
1
10
100
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
1000
0.02
DC
0.08
FORWARD POWER
DISSIPATION : Pf(W)
Rth(j-a)
100
Rth(j-c)
10
D=1/2
0.06
Sin(=180)
0.04
0.02
0.015
0.01
DC
0.005
Sin(=180)
1
0.001
20
Ta=25C
f=1MHz
VR=0V
n=10pcs
18
100
VF DISPERSION MAP
20
15
20
Ta=25C
VR=10V
n=30pcs
900
320
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
1000
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
VF-IF CHARACTERISTICS
360
10
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
100
REVERSE POWER
DISSIPATION : PR (W)
0
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
0.1
0.001
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
f=1MHz
100000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
100
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=125
Ta=125C
D=1/2
0
0.01
0.1
1
10
100
1000
0
0.05
0.1
0.15
0.2
0
0
TIME : t(s)
Rth-t CHARACTERISTICS
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AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2/3
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
2010.02 - Rev.A
RB530S-30
0.3
Io
0A
0V
VR
t
DC
0.2
T
D=t/T
VR=15V
Tj=125C
D=1/2
0.1
Sin(=180)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0.3
Data Sheet
Io
0A
0V
VR
t
0.2
T
D=t/T
VR=15V
Tj=125C
100
125
DC
D=1/2
0.1
Sin(=180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
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©2010 ROHM Co., Ltd. All rights reserved.
0
25
50
75
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
3/3
2010.02 - Rev.A
Notice
Notes
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R1010A