Renesas H7N0307LD Silicon n channel mos fet high speed power switching Datasheet

H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1121-0700
(Previous: ADE-208-1516E)
Rev.7.00
Apr 07, 2006
Features
• Low on-resistance
RDS (on) = 4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
4
1
1
2
1. Gate
2. Drain
3. Source
4. Drain
2
3
3
H7N0307LD
H7N0307LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
D
4
G
1
2
3
H7N0307LM
Rev.7.00 Apr 07, 2006 page 1 of 7
S
H7N0307LD, H7N0307LS, H7N0307LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
60
V
A
240
60
A
A
Pch
θ ch-c
90
1.39
W
°C/W
Channel to ambient thermal impedance
Channel temperature
θ ch-a
Tch
89
150
°C/W
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel to case thermal impedance
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
30
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
—
1.0
—
—
10
2.5
µA
V
VDS = 30 V, VGS = 0
Note 3
ID = 1 mA, VDS = 10 V
RDS (on)
—
—
4.6
8.0
5.8
11.5
mΩ
mΩ
ID = 30 A, VGS = 10 V
Note 3
ID = 30 A, VGS = 4.5 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
40
—
65
2500
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
650
350
—
—
pF
pF
ID = 30 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Gate to source charge
Qg
Qgs
—
—
40
7
—
—
nC
nC
Gate to drain charge
Turn-on delay time
Qgd
td (on)
—
—
8
20
—
—
nC
ns
Rise time
Turn-off delay time
tr
td (off)
—
—
300
70
—
—
ns
ns
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
20
0.92
—
—
ns
V
trr
—
60
—
ns
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Body to drain diode reverse recovery
time
Note:
3. Pulse test
Rev.7.00 Apr 07, 2006 page 2 of 7
VGS (off)
Note 3
VDD = 10 V
VGS = 10 V
ID = 60 A
VGS = 10 V, ID = 30 A
RL = 0.33 Ω
Rg = 4.7 Ω
IF = 60 A, VGS = 0
IF = 60 A, VGS = 0
diF/dt = 50 A/µs
Note 3
H7N0307LD, H7N0307LS, H7N0307LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
(A)
500
ID
120
Drain Current
Channel Dissipation
Pch (W)
160
80
40
10
1m
100
DC
0
50
100
150
Case Temperature
on
=
10
ms
Operation in
this area is
limited by RDS (on)
1
0.1
0.01
0.1
200
Tc (°C)
3
10
30
100
VDS (V)
50
10 V
VDS = 10 V
Pulse Test
3.5 V
Pulse Test
4.5 V
40
1
Typical Transfer Characteristics
ID (A)
50
0.3
Drain to Source Voltage
Typical Output Characteristics
ID (A)
PW
ati
µs
Tc = 25°C
1 shot Pulse
0
30
40
30
20
Drain Current
Drain Current
Op
er
10
s 100
µs
3V
10
25°C
20
Tc = 75°C
–25°C
10
VGS = 2.5 V
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
VDS (V)
0.16
0.12
0.08
ID = 10 A
0.04
5A
2A
0
0
4
8
12
Gate to Source Voltage
Rev.7.00 Apr 07, 2006 page 3 of 7
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (V)
Pulse Test
2
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
1
100
Pulse Test
50
20
VGS = 4.5 V
10
5
10 V
2
1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
H7N0307LD, H7N0307LS, H7N0307LM
20
Pulse Test
16
ID = 2 A, 5 A, 10 A
12
VGS = 4.5 V
8
2 A, 5 A, 10 A
4
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
100
Tc = –25°C
30
75°C
10
25°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
500
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10000
200
100
50
Coss
300
Crss
100
1
3
10
30
100
0
8
10
4
VDD = 25 V
10 V
5V
0
20
40
Gate Charge
Rev.7.00 Apr 07, 2006 page 4 of 7
60
80
Qg (nc)
30
40
50
0
100
VGS (V)
500
Switching Time t (ns)
VDD = 25 V
10 V 12
5V
Gate to Source Voltage
(V)
VDS
Drain to Source Voltage
16
20
20
Switching Characteristics
VGS
VDS
10
Drain to Source Voltage VDS (V)
IDR (A)
20
0
VGS = 0
f = 1 MHz
10
0.3
ID = 60 A
30
100
1000
Dynamic Input Characteristics
40
30
Ciss
30
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Reverse Drain Current
50
10
Typical Capacitance vs.
Drain to Source Voltage
1000
10
0.1
3
Drain Current ID (A)
(°C)
Body to Drain Diode Reverse
Recovery Time
20
1
0.3
200
100
tr
td(off)
50
td(on)
20
tf
10
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
5
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
H7N0307LD, H7N0307LS, H7N0307LM
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current IDR (A)
100
80
10 V
60
VGS = 0
5V
40
20
Pulse Test
0
0
0.4
0.8
1.2
2.0
1.6
Source to Drain Voltage
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 1.38°C/W, Tc = 25°C
0.1
0.05
0.02
0.03
PDM
1
e
0.0 puls
t
ho
1s
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
Rev.7.00 Apr 07, 2006 page 5 of 7
10%
RL
tr
90%
td(off)
tf
H7N0307LD, H7N0307LS, H7N0307LM
Package Dimensions
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
(1.5)
10.0
Rev.7.00 Apr 07, 2006 page 6 of 7
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
H7N0307LD, H7N0307LS, H7N0307LM
JEITA Package Code

RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
7.8
6.6
(2.3)
10.0
2.49 ± 0.2
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
0.2
0.1 +– 0.1
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
H7N0307LD-E
H7N0307LSTL-E
Quantity
500 pcs
1000 pcs
Shipping Container
Box (Conductive Sack)
Taping
H7N0307LMTL-E
1000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.7.00 Apr 07, 2006 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
Similar pages