PHILIPS BYQ28-200 Rectifier diodes ultrafast Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated dual epitaxial
rectifier diodes in a full pack plastic
envelope, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
PINNING - SOT186A
PIN
SYMBOL
PARAMETER
BYQ28XRepetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
VRRM
VF
IO(AV)
trr
PIN CONFIGURATION
MAX.
MAX.
MAX.
UNIT
100
100
150
150
200
200
V
0.895
10
0.895
10
0.895
10
V
A
25
25
25
ns
SYMBOL
DESCRIPTION
case
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
a2
3
a1
1
k2
case isolated
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage1
IO(AV)
Output current (both diodes
conducting)2
IO(RMS)
IFRM
IFSM
I2t
Tstg
Tj
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I2t for fusing
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
square wave
δ = 0.5; Ths ≤ 92 ˚C
sinusoidal
a = 1.57; Ths ≤ 95 ˚C
t = 25 µs; δ = 0.5;
Ths ≤ 92 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
t = 10 ms
MAX.
-100
100
100
100
-150
150
150
150
UNIT
-200
200
200
200
V
V
V
-
10
A
-
9
A
-
14
10
A
A
-
50
55
A
A
-40
-
12.5
150
150
A2s
˚C
˚C
1 Ths ≤ 148˚C for thermal stability.
2 Neglecting switching and reverse current losses
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
5.7
6.7
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.80
0.95
1.10
0.1
2
0.895
1.10
1.25
0.2
10
V
V
V
mA
µA
MIN.
TYP.
MAX.
UNIT
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
with heatsink compound
without heatsink compound
in free air
Rth j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
IF = 5 A; Tj = 150˚C
IF = 5 A
IF = 10 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
Qs
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Reverse recovery time (per
diode)
Forward recovery voltage (per
diode)
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
4
9
nC
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
-
15
25
ns
-
10
20
ns
IF = 1 A; dIF/dt = 10 A/µs
-
1
-
V
trr1
trr2
Vfr
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
I
dI
F
BYQ28X series
0.5A
F
dt
IF
t
0A
rr
time
Q
I
10%
s
I rec = 0.25A
IR
100%
trr2
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
I
Fig.4. Definition of trr2
8
F
PF / W
Ths(max) / C
BYQ28
Vo = 0.748 V
D = 1.0
Rs = 0.0293 Ohms
7
110.1
115.8
6
0.5
5
time
127.2
0.1
3
132.9
fr
tp
I
2
V
121.5
0.2
4
VF
D=
1
0
time
Fig.2. Definition of Vfr
0
1
2
3
4
IF(AV) / A
5
tp
T
138.6
144.3
t
T
VF
104.4
6
150
8
7
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
R
6
PF / W
Ths(max) / C
BYQ28
Vo = 0.748 V
Rs = 0.0293 Ohms
a = 1.57
5
115.8
121.5
1.9
D.U.T.
2.2
4
Voltage Pulse Source
4
3
Current
shunt
to ’scope
Fig.3. Circuit schematic for trr2
132.9
2
138.6
1
144.3
0
August 1996
127.2
2.8
0
1
2
3
IF(AV) / A
4
5
150
6
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
trr / ns
1000
Qs / nC
100
IF=5A
IF=2A
IF=1A
IF=5A
100
10
IF=1A
10
1
1.0
1
0.1
100
10
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
10
-dIF/dt (A/us)
100
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
1.0
10
Zth j-hs (K/W)
without heatsink compound
with heatsink compound
1
1
IF=5A
0.1
IF=1A
0.1
PD
tp
t
0.01
10
-dIF/dt (A/us)
1
0.01
10us
100
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
15
1ms
tp / s
0.1s
10s
Fig.11. Transient thermal impedance; per diode;
Zth j-hs = f(tp).
BYQ28
IF / A
Tj=150C
Tj=25C
10
5
max
typ
0
0
0.5
VF / V
1
1.5
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
August 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
6
Rev 1.000
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