INCHANGE Semiconductor MBRB20200CT Schottky Barrier Rectifier FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 20 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 150 A Junction Temperature -65~150 ℃ Storage Temperature Range -65~175 ℃ TJ Tstg isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier MBRB20200CT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W ELECTRICAL CHARACTERISTICS SYMBOL VF IR PARAMETER Maximum Voltage Maximum Current Instantaneous Instantaneous CONDITIONS Forward Reverse isc website：www.iscsemi.com TYP MAX UNIT IF=10A ; Tj=25℃ 0.9 IF=10A ; Tj= 125℃ 0.8 IF=20A ; Tj= 25℃ 1.0 IF=20A ; Tj= 125℃ 0.9 VR= VRWM;Tj= 25℃ 1 mA VR= VRWM;Tj= 125℃ 50 mA 2 V isc & iscsemi is registered trademark