TGS MJE13009 Switchmode series npn silicon power transistor Datasheet

TIGER ELECTRONIC CO.,LTD
Product specification
MJE13009
SWITCHMODE Series NPN Silicon Power Transistors
DESCRIPTION
These devices are designed for high–voltage, high–speed power switching inductive circuits
where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such
as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and
Deflection circuits.
O
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
l
Value
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
IC
12.0
A
Base Current
IB
6.0
A
Ptot
110
W
Tj
150
o
Tstg
-55~150
o
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
C
C
TO-3PN
O
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICEO
VCB=400V, IE=0
—
—
1.0
mA
Emitter Cut-off Current
IEBO
VEB=9V, IC=0
—
—
1.0
mA
Collector-Emitter Sustaining Voltage
VCEO
IC=10mA, IB=0
400
—
—
V
hFE(1)
VCE=5V, IC=5.0A
8
—
40
hFE(2)
VCE=5V, IC=8.0A
6
—
30
IC=8.0A,IB=1.6A
—
—
1.5
IC=12.0A,IB=3.0A
—
—
3.0
—
—
1.6
V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat) IC=8.0A,IB=1.6A
V
Current Gain Bandwidth Product
fT
VCE=10V,IC=500mA
4
—
—
MHz
Storage Time
TS
IB1=IB2=1.6A tp=25us
—
3.5
4
us
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