ON MJE210 Power transistors complementary silicon Datasheet

 Order this document
by MJE200/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for low voltage, low–power, high–gain audio amplifier applications.
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc
High DC Current Gain — hFE = 45 (Min) @ IC = 2.0 Adc
High DC Current Gain — hFE = 10 (Min) @ IC = 5.0 Adc
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current–Gain — Bandwidth Product —
fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage —
ICBO = 100 nAdc @ Rated VCB
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*Motorola Preferred Device
5 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
25 VOLTS
15 WATTS
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
Symbol
Value
Unit
VCB
VCEO
40
Vdc
25
Vdc
VEB
IC
8.0
Vdc
5.0
10
Adc
IB
PD
1.0
Adc
15
0.12
Watts
W/_C
PD
1.5
0.012
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
θJC
θJA
8.34
_C/W
83.4
_C/W
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
CASE 77–08
TO–225AA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
80
100
120
140
TA
PD, POWER DISSIPATION (WATTS)
TC
PD, POWER DISSIPATION (WATTS)
Thermal Resistance, Junction to Ambient
0
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
25
—
Vdc
—
—
100
100
nAdc
µAdc
—
100
70
45
10
—
180
—
—
—
—
0.3
0.75
1.8
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125_C)
ICBO
Emitter Cutoff Current
(VBE = 8.0 Vdc, IC = 0)
IEBO
nAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 5.0 Adc, VCE = 2.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage (1)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
—
2.5
Vdc
Base–Emitter On Voltage (1)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
VBE(on)
—
1.6
Vdc
fT
65
—
MHz
—
—
80
120
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
(2) fT = hfe• ftest.
2.0%.
VCC
+ 30 V
1K
SCOPE
RB
–4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
2
t, TIME (ns)
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
td
100
0
– 9.0 V
500
300
200
RC
25 µs
+11 V
pF
MJE200
MJE210
50
30
20
tr
10
5
3
2
VCC = 30 V
IC/IB = 10
TJ = 25°C
MJE200
MJE210
1
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
IC, COLLECTOR CURRENT (AMPS)
3
5
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
10
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.01
0.03
P(pk)
θJC(t) = r(t) θJC
θJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.05
0 (SINGLE PULSE)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
IC, COLLECTOR CURRENT (AMP)
Figure 4. Thermal Response
10
7.0
5.0
1.0 ms
3.0
dc
500 µs
100 µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150 _ C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0 ms
2.0
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
1.0
0.7
0.5
0.3
0.2
0.1
1.0
v
2.0
3.0
5.0
7.0
10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
30
Figure 5. Active Region Safe Operating Area
10K
200
ts
t, TIME (ns)
1K
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
TJ = 25°C
C, CAPACITANCE (pF)
5K
3K
2K
500
300
200
100
tf
50
30
20
MJE200
MJE210
10
0.01
Cib
100
70
50
Cob
MJE200 (NPN)
MJE210 (PNP)
30
0.2 0.3 0.5
1
2 3
0.02 0.03 0.05 0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
5
10
20
0.4 0.6
1.0
2.0
4.0 6.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 7. Capacitance
3
NPN
MJE200
400
TJ = 150°C
25°C
200
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
400
PNP
MJE210
– 55°C
100
80
60
40
VCE = 1.0 V
VCE = 2.0 V
20
0.05 0.07 0.1
TJ = 150°C
200
25°C
100
80
– 55°C
60
40
VCE = 1.0 V
VCE = 2.0 V
0.5 0.7 1.0
2.0
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
3.0
20
0.05 0.07 0.1
5.0
0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
3.0
5.0
Figure 8. DC Current Gain
2.0
2.0
TJ = 25°C
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0
VCE(sat) @ IC/IB = 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
5.0
2.0 3.0
5.0
+ 2.5
+ 2.0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
Figure 9. “On” Voltage
*APPLIES FOR IC/IB ≤ hFE/3
+ 1.5
+ 1.0
+ 0.5
25°C to 150°C
θVC for VCE(sat)
0
– 55°C to 25°C
– 0.5
– 1.0
– 1.5
– 2.0
25°C to 150°C
θVB for VBE
– 2.5
0.05 0.07 0.1
– 55°C to 25°C
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
+ 2.5
+ 2.0
*APPLIES FOR IC/IB ≤ hFE/3
+ 1.5
+ 1.0
+ 0.5
25°C to 150°C
*θVC for VCE(sat)
0
– 55°C to 25°C
– 0.5
25°C to 150°C
– 1.0
– 1.5
θVB for VBE
– 55°C to 25°C
– 2.0
– 2.5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
4
Motorola Bipolar Power Transistor Device Data
5.0
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA
ISSUE V
Motorola Bipolar Power Transistor Device Data
5
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJE200/D*
MJE200/D
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