NTE NTE363 Silicon npn transistor rf power amp, po = 4w Datasheet

NTE363
Silicon NPN Transistor
RF Power Amp, PO = 4W
Description:
The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications.
Features:
D Designed for UHF Military and Commercial Equipment
D 4W (Min) with Greater than 8dB Gain
D Withstands Infinite VSWR Under Operating Conditions
D Low Inductance Stripline Package
D Emitter Stabilized
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6°C/W
Electrical Characteristics:
Parameter
Collector–Emiter Breakdown Voltage
Emitter–Base Breakdown Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 100mA, IB = 0, Note 1
16
–
–
V
V(BR)CES IC = 100mA, IBE = 0, Note 1
36
–
–
V
V(BR)EBO IE = 2mA, IC = 0
4
–
–
V
mA
Collector Cutoff Current
ICBO
VCB = 5V, IE = 0
–
–
1.0
DC Current Gain
hFE
VCE = 5V, IC = 200mA
20
–
–
Note 1. Pulsed throught 25MH inductor.
Electrical Characteristics (Cont’d):
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
RF Characteristics, Small–Signal
Output Capacitance
Cob
VCB = 12.5V, IC = 0
–
–
25
pF
Input Capacitance
Cib
VEB = 500mV, IC = 0
–
60
–
pF
Amplifier Power Out
PO
470MHz/12.5V
4
–
–
W
Amplifier Power Gain
Pg
8
–
–
dB
Input Impedance
Zin
2.0 + J.96
Ω
Output Impedance
Zout
6.0 – J3.4
Ω
RF Characteristics, Large–Signal
B
.225 (5.72)
E
E
.530
(13.46)
C
.063 (1.62)
.282 (7.17)
Dia
.123 (3.12)
.005 (0.15)
Seating
Plane
8–32 NC–3A
Wrench Flat
.250 (6.35) Dia
.630
(16.0)
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