Low frequency transistor Complex (2-elements) Bipolar Transistor EMX28 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package. Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA (6) (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.22 0.13 Each lead has same dimensions Abbreviated symbol : X28 zApplications General purpose small signal amplifier zPackaging specifications Package Type zInner circuit Taping (6) Code T2R Basic ordering unit (pieces) 8000 (5) (4) EMX28 zAbsolute maximum ratings (Ta=25°C) <Tr1, Tr2> Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP ∗1 ∗2 PD Tj Tstg Limits Unit V 30 V 30 6 V 400 mA 800 mA 150 mW / TOTAL 120 mW / ELEMENT °C 150 °C −55 to +150 (1) (2) (3) ∗1 Pw=10ms, Single pulse ∗2 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) <Tr1, Tr2> Parameter Symbol Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance BVCEO BVCBO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. 30 30 6 − − − 270 − − www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Typ. − − − − − 120 − 400 3.0 Max. − − − 100 100 300 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB= 30V VEB= 6V IC=100mA, IB= 2mA VCE=2V, IC=100mA VCE=2V, IE= −100mA, f=100MHz VCB=10V, IE= 0A, f=1MHz 1/3 2009.05 - Rev.B EMX28 Data Sheet zElectrical characteristics curves COLLECTOR CURRENT : I C [mA] Ta=25°C pulsed 1.2mA 2mA 1.6mA 300 COLLECTOR CURRENT : I C [mA] 1000 400 1mA 0.8mA 200 0.6mA 0.4mA 100 VCE=2V pulsed Ta=125°C 85°C 100 25°C -40°C 10 IB=0.2mA 1 0.2 0 0 1 2 3 4 5 0.4 0.6 0.8 1 BASE TO EMITTER VOLTAGE : VBE [V] COLLECTOR - EMITTER VOLTAGE : VCE [V] Fig.2 Grounded Emitter Propagation Characteristics Fig.1 Typical Output Characteristics 1000 1000 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE VCE=5V VCE=2V 100 Ta=25°C pulsed 10 1 Ta=125°C 85°C 100 25°C -40°C VCE=2V pulsed 10 10 100 1 1000 10 Collector Current （Ⅰ） COLLECTOR SATURATION VOLTAGE : VCE(s at) [V] COLLECTOR SATURATION VOLTAGE : VCE(sat) [V] 1 Ta=25°C pulsed IC /IB=50/1 20/1 10/1 0.1 0.01 1 10 100 1000 Fig.4 DC Current Gain vs Collector Current （Ⅱ） Fig.3 DC Current Gain vs 1 100 COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA] 25°C -40°C 1 COLLECTOR CURRENT : IC [mA] 10 100 1000 COLLECTOR CURRENT : IC [mA] Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Voltage vs Collector Current (Ⅱ) Voltage vs Collector Current (Ⅰ) www.rohm.com Ta= 125°C 85°C 0.1 0.01 1000 c 2009 ROHM Co., Ltd. All rights reserved. ○ IC /IB=10/1 pulsed 2/3 2009.05 - Rev.B EMX28 Data Sheet 1 IC /IB=20/1 pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) [V] COLLECTOR SATURATION VOLTAGE : VCE(s at) [V] 1 Ta=125℃ 85℃ 25℃ 0.1 -40℃ 0.01 1 10 100 COLLECTOR CURRNT : IC [mA] Ta=125°C 85°C 25°C -40°C 0.1 IC /IB=50/1 pulsed 0.01 1000 1 Fig.8 Collector-Emitter Saturation Fig.7 Collector-Emitter Saturation Voltage vs Collector Current (Ⅳ) Voltage vs Collector Current (Ⅲ) 100 10 1 10 100 1000 EMITTER CURRENT : IE [mA] Fig.9 Transion frequency vs Emitter Collector www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ EMITTER INPUT CAPACITANCE : Cib(pF) 100 Ta=25°C VCE= 2V pulsed COLLECTOR OUTPUT CAPACITANCE : Cob(pF) TRANSITION FREQUENCY : fT [MHz] 1000 10 100 1000 COLLECTOR CURRENT : IC [mA] Ta=25°C f=1MHz IE=0A IC =0A Cib 10 Cob 1 0.1 1 10 100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) Fig.10 Emitter input capacitance vs. EmitterBase Voltage Collector output capacitance vs. CollectorBase Voltage 3/3 2009.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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