MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 650VCoolMOS™CEPowerTransistor IPS65R1K5CE DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 1Description IPAKSL CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. tab Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications Drain Pin 2, Tab Gate Pin 1 Applications Source Pin 3 PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandLighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 1500 mΩ Qg.typ 10.5 nC ID,pulse 8.3 A Eoss@400V 1.15 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPS65R1K5CE PG-TO 251 65CE1K5 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 3.1 2.0 A TC=25°C TC=100°C - 8.3 A TC=25°C - - 26 mJ ID=0.6A; VDD=50V; see table 10 EAR - - 0.10 mJ ID=0.6A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 0.6 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 28 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 2.7 A TC=25°C Diode pulse current IS,pulse - - 8.3 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 4.4 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 5 1.6mm (0.063 in.) from case for 10s Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.5 V VDS=VGS,ID=0.1mA - 10 1 - µA VDS=650,VGS=0V,Tj=25°C VDS=650,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.26 3.28 1.50 - Ω VGS=10V,ID=1A,Tj=25°C VGS=10V,ID=1A,Tj=150°C Gate resistance RG - 6.5 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 650 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 225 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 18 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 10 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 42 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 7.7 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω;seetable9 Rise time tr - 5.9 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω;seetable9 Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω;seetable9 Fall time tf - 18.2 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.3 - nC VDD=480V,ID=1.5A,VGS=0to10V Gate to drain charge Qgd - 5.8 - nC VDD=480V,ID=1.5A,VGS=0to10V Gate charge total Qg - 10.5 - nC VDD=480V,ID=1.5A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 2) Final Data Sheet 6 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.5A,Tj=25°C 200 - ns VR=400V,IF=1.5A,diF/dt=100A/µs; see table 8 - 0.9 - µC VR=400V,IF=1.5A,diF/dt=100A/µs; see table 8 - 8 - A VR=400V,IF=1.5A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram2:Safeoperatingarea(NonFullPAK) 101 30 1 µs 10 µs 25 100 µs 1 ms 100 10 ms 20 ID[A] Ptot[W] DC 15 10-1 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(NonFullPAK) Diagram4:Max.transientthermalimpedance(NonFullPAK) 1 101 10 1 µs 10 µs 0.5 100 µs 0 10 1 ms 100 10 ms 0.1 ZthJC[K/W] DC ID[A] 0.2 10-1 0.05 0.02 10-1 0.01 single pulse 10-2 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 10 6 20 V 9 20 V 10 V 10 V 5 8 8V 8V 7 4 7V 3 6V 7V 5 ID[A] ID[A] 6 4 3 6V 2 5.5 V 5V 1 4.5 V 5V 1 0 5.5 V 2 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 7.0 4.0 6.5 3.5 6.0 5.5 3.0 5.0 4.0 5 V 5.5 V 6V 6.5 V RDS(on)[Ω] RDS(on)[Ω] 2.5 4.5 7V 3.5 3.0 98% 2.0 typ 1.5 10 V 2.5 1.0 2.0 0.5 1.5 1.0 0 1 2 3 4 5 6 0.0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1.0A;VGS=10V 9 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 10 10 9 9 25 °C 7 7 6 6 VGS[V] 8 ID[A] 8 5 150 °C 4 3 3 2 2 1 1 0 2 4 6 8 10 0 12 480 V 5 4 0 120 V 0 1 2 3 4 VGS[V] 5 6 7 8 9 10 11 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 30 25 °C 125 °C 25 101 IF[A] EAS[mJ] 20 100 15 10 5 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.6A;VDD=50V 10 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 750 730 710 103 690 Ciss C[pF] VBR(DSS)[V] 670 650 102 630 Coss 610 101 590 570 Crss 550 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1.0mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 1.5 Eoss[µJ] 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 7PackageOutlines Figure1OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE 8AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2014-09-25 650VCoolMOS™CEPowerTransistor IPS65R1K5CE RevisionHistory IPS65R1K5CE Revision:2014-09-25,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-09-25 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2014-09-25