Mitsubishi M54563FP 8-unit 500ma source type darlington transistor array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54563FP is an eight-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.
PIN CONFIGURATION








INPUT 








FEATURES
Á High breakdown voltage (BV CEO ≥ 50V)
Á High-current driving (Io(max) = –500mA)
Á With clamping diodes
Á Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Á Wide operating temperature range (Ta = –20 to +75°C)
Á Output current-sourcing type
IN1→ 1
18 →O1 
IN2→ 2
17 →O2 

IN3→ 3
16 →O3 
IN4→ 4
15 →O4 
IN5→ 5
14 →O5 
IN6→ 6
13 →O6 
IN7→ 7
12 →O7 
IN8→ 8
11 →O8 
VS


 OUTPUT




10 GND
Package type 18P4G(P)
NC








INPUT 








APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
FUNCTION
The M54563P and M54563FP each have eight circuits,
which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A clamping diode is provided between each output
and GND. V S and GND are used commonly among the eight
circuits.
The inputs have resistance of 3kΩ, and voltage of up to 10V
is applicable. Output current is 500 mA maximum. Supply
voltage V S is 50V maximum.
The M54563FP is enclosed in a molded small flat package,
enabling space-saving design.
9

1
20
NC
IN1→ 2
19 →O1 
IN2→ 3
18 →O2 
IN3→ 4
17 →O3 
IN4→ 5
16 →O4 
IN5→ 6
15 →O5 
IN6→ 7
14 →O6 
IN7→ 8
13 →O7 
IN8→ 9
12 →O8 
VS
10




 OUTPUT




11 GND
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
VS
20K
3K
INPUT
7.2K
1.5K
3K
OUTPUT
GND
The eight circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
#
VS
VI
Parameter
Conditions
Collector-emitter voltage
Supply voltage
Output, L
Input voltage
IO
IF
VR
Pd
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Output current
Clamping diode forward current
#
Topr
Unit
V
50
V
V
–0.5 ~ +10
–500
Current per circuit output, H
mA
mA
–500
50
Clamping diode reverse voltage
Power dissipation
Ta = 25°C, when mounted on board
Operating temperature
Storage temperature
Tstg
Ratings
–0.5 ~ +50
V
W
1.79(P)/1.10(FP)
–20 ~ +75
°C
–55 ~ +125
°C
# : Unused I/O pins must be connected to GND.
RECOMMENDED OPERATING CONDITIONS
Symbol
VS
Parameter
Supply voltage
Output current
(Current per 1 circuit when 8 circuits
are coming on simultaneously)
IO
(Unless otherwise noted, Ta = –20 ~ +75°C)
min
Duty Cycle
P : no more than 8%
FP : no more than 5%
Duty Cycle
P : no more than 55%
FP : no more than 30%
Limits
typ
max
0
—
50
0
—
–350
0
—
–100
—
—
10
V
0.2
V
“H” input voltage
2.4
VIL
“L” input voltage
0
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Test conditions
Unit
typ+
—
max
100
—
1.6
2.4
VI = 3V
—
—
1.45
0.6
2.0
1.0
—
—
2.9
5.6
5.0
15.0
mA
—
—
–1.2
—
–2.4
100
V
µA
Supply leak current
VCE (sat)
VS = 10V, VI = 2.4V, IO = –350mA
Collector-emitter saturation voltage
VS = 10V, VI = 2.4V, IO = –100mA
II
Input current
IS
VF
Supply current
VI = 10V
VS = 50V, VI = 3V (all input)
Clamping diode forward voltage
Clamping diode reverse current
IF = –350mA
VR = 50V
#
Limits
min
—
IS (leak) #
IR
V
mA
VIH
Symbol
Unit
VS = 50V, VI = 0.2V
µA
V
mA
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
ton
toff
Parameter
Turn-on time
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
typ
max
—
100
—
—
4800
—
min
Unit
ns
ns
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
VS
50%
Measured device
50%
INPUT
OUTPUT
PG
50Ω
RL
CL
50%
50%
OUTPUT
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0 to 2.4V
(2) Input-output conditions : RL = 30Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Output Current Characteristics
Thermal Derating Factor Characteristics
–500
M54563P
Output current IO (mA)
Power dissipation Pd (W)
2.0
1.5
M54563FP
1.0
0.5
0
0
25
50
75
–300
–200
–100
0
100
VS = 10V
VI = 2.4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
–400
0
0.5
1.0
1.5
2.0
2.5
Output saturation voltage VCE (sat) (V)
Ambient temperature Ta (°C)
Duty-Cycle-Output Current Characteristics
(M54563P)
–500
➀
Duty-Cycle-Output Current Characteristics
(M54563P)
–500
–400
–400
–300
➂
–200
–100
0
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
20
40
60
Duty cycle (%)
80
➃
➄
➅
➆
➇
100
Output current IO (mA)
Output current IO (mA)
➀
➁
–300
➁
–200
➂
–100
0
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
0
20
40
60
➃
➄
➅
➆
➇
80
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Output Current Characteristics
(M54563FP)
–500
Duty-Cycle-Output Current Characteristics
(M54563FP)
–500
–300
➁
–200
–100
0
➂
➃
➄
➅
➆
➇
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
20
40
60
80
Output current IO (mA)
Output current IO (mA)
➀
–400
–400
–300
–200
➁
–100
0
100
➀
•The output current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
0
20
40
Duty cycle (%)
Grounded Emitter Transfer Characteristics
Clamping Diode Characteristics
Forward bias current IF (mA)
Output current IO (mA)
VS = 20V
VS-VO = 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
–300
–200
–100
0
0.2
0.4
0.6
0.8
400
300
200
100
0
1.0
Ta = 75°C
Ta = 25°C
Ta = –20°C
0
Input voltage VI (V)
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Input Characteristics
Input Characteristics
1.0
5
VS = 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
VS = 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
4
Input current II (mA)
0.8
Input current II (mA)
100
500
–400
0.6
0.4
0.2
0
80
Duty cycle (%)
–500
0
•Ta = 75°C
60
➂
➃
➄
➅
➆
➇
3
2
1
0
1
2
3
Input voltage VI (V)
4
5
0
0
2
4
6
8
10
Input voltage VI (V)
Aug. 1999
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