ROHM MP6X2

MP6X2
Transistors
Medium Power Transistor (32V, 2A)
MP6X2
zDimensions (Unit : mm)
zApplication
Low frequency amplifier
MPT6
zFeatures
1) Low VCE(sat), VCE(sat) = 0.5V(Typ.)
(IC / IB = 2A / 0.2A)
2) Contain two 2SD1766-dies in a package.
zStructure
NPN silicon epitaxial planar transistor
zPackaging specifications
Package
Type
(6)
(5)
(4)
(1)
(2)
(3)
zInner circuit
Taping
(6)
Code
(5)
(4)
TR
Basic ordering unit (pieces)
1000
MP6X2
<Tr2>
<Tr1>
(1)
(2)
(1) EMITTER<Tr1>
(2) BASE<Tr1>
(3) COLLECTOR<Tr2>
(4) EMITTER<Tr2>
(5) BASE<Tr2>
(6) COLLECTOR<Tr1>
(3)
zAbsolute maximum ratings (Ta=25°C)
<Tr1, Tr2>
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
Parameter
VEBO
5
V
Continuous
IC
2.0
A
Pulsed
ICP
∗1
2.5
A
∗2
2.0
W / TOTAL
PD
1.4
W / ELEMENT
Tj
150
°C
Tstg
−55 to +150
°C
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms 1Pulse
∗2 Mounted on a ceramic board
Rev.A
1/3
MP6X2
Transistors
zElectrical characteristics (Ta=25°C)
<Tr1, Tr2>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
32
−
−
V
IC=1mA
Collector-base breakdown voltage
BVCBO
40
−
−
V
IC=50µA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50µA
ICBO
−
−
1.0
µA
VCB=20V
Parameter
Collector cutoff current
Conditions
−
−
1.0
µA
VEB=4V
VCE(sat)
−
500
800
mV
IC/IB=2.0A/200mA
DC current gain
hFE
120
−
390
−
Transition frequency
fT
−
100
−
MHz
−
30
−
pF
IEBO
Emitter cutoff current
Collector-emitter saturation voltage
∗
∗
Cob
Collector output capacitance
VCE=3V, IC=500mA
VCE=5V, IE=−500mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
∗ Pulsed
zElectrical characteristics curves
0.35
1
500
1.8mA
0.3
1.6mA
0.25
1.4mA
1.2mA
0.2
0.1
1.0mA
0.15
0.8mA
0.1
0.01
Ta=25°C
2.0mA
Ta=25℃
VCE=3V
Ta=100℃
25℃
-40℃
0.6mA
0.4mA
0.05
DC CURRENT GAIN : hFE
COLLECTOR CURRENT:Ic(A)
10
200
VCE=3V
1V
100
50
0.2mA
0
0.001
0
0.5
1
0
1.5
20
IB=0mA
0.5
1
1.5
2
5
10 20
50 100 200
500 1A 2A
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE:VCE(V)
DC CURRENT GAIN:hFE
VCE=3V
100
Ta=100℃
25℃
-40℃
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT:Ic(A)
Fig.4 DC Current Gain vs. Collector Current (Ⅱ)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000
Fig.3 DC current gain vs. collector
current ( Ι )
Fig.2 Ground Emitter Output Caracteristics
Fig.1 Grounded Emitter Propagation Characteristics
Ta=25°C
500
200
100
IC/IB=50
50
20
20
5
10
10 20
50 100 200 500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current (Ι)
COLLECTOR SATURATION VOLTAGE
:VCE(sat)(V)
BASE TO EMITTER VOLTAGE:VBE(V)
1
IC/IB=10
Ta=100℃
25℃
-40℃
0.1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT:Ic(A)
Fig.6 Collector-Enitter Saturation
Voltage vs. Collector Current (Ⅱ)
Rev.A
2/3
MP6X2
Ta=25°C
1
IC/IB=10
0.5
0.2
0.1
5
10 20
50 100 200
500 1A 2A
1000
Ta=25°C
VCE=5V
500
200
100
50
20
−1
−2
COLLECTOR CURRENT : IC (mA)
−5 −10 −20
−50 −100−200 −500 −1A
EMITTER CURRENT : IE (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Fig.8 Transition frequency vs. emitter
current
10
Ta=25°C
f=1MHz
IE=0A
IC=0A
500
Cib
200
100
Cob
50
20
10
0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
10
Ta=25℃
COLLECTOR CURRENT : IC (A)
Normalized Transient Thermal Resistance : r(t)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
1000
2
TRANSITION FREQUENCY : fT (MHz)
BASE SATURATION VOLTAGE : VBE(sat) (V)
Transistors
1
0.1
0.01
0.001
100ms 10ms
1ms
1
DC
0.1
Ta=25℃
Single Pulse
0.01
0.1
10
1000
Pulse width : Pw(s)
Fig.10 Normalized thermal resistance
(Element)
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE
: VCE (V)
Fig.11 Safe operating area
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0