MP6X2 Transistors Medium Power Transistor (32V, 2A) MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor zPackaging specifications Package Type (6) (5) (4) (1) (2) (3) zInner circuit Taping (6) Code (5) (4) TR Basic ordering unit (pieces) 1000 MP6X2 <Tr2> <Tr1> (1) (2) (1) EMITTER<Tr1> (2) BASE<Tr1> (3) COLLECTOR<Tr2> (4) EMITTER<Tr2> (5) BASE<Tr2> (6) COLLECTOR<Tr1> (3) zAbsolute maximum ratings (Ta=25°C) <Tr1, Tr2> Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage Parameter VEBO 5 V Continuous IC 2.0 A Pulsed ICP ∗1 2.5 A ∗2 2.0 W / TOTAL PD 1.4 W / ELEMENT Tj 150 °C Tstg −55 to +150 °C Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Rev.A 1/3 MP6X2 Transistors zElectrical characteristics (Ta=25°C) <Tr1, Tr2> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Collector-base breakdown voltage BVCBO 40 − − V IC=50µA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA ICBO − − 1.0 µA VCB=20V Parameter Collector cutoff current Conditions − − 1.0 µA VEB=4V VCE(sat) − 500 800 mV IC/IB=2.0A/200mA DC current gain hFE 120 − 390 − Transition frequency fT − 100 − MHz − 30 − pF IEBO Emitter cutoff current Collector-emitter saturation voltage ∗ ∗ Cob Collector output capacitance VCE=3V, IC=500mA VCE=5V, IE=−500mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ Pulsed zElectrical characteristics curves 0.35 1 500 1.8mA 0.3 1.6mA 0.25 1.4mA 1.2mA 0.2 0.1 1.0mA 0.15 0.8mA 0.1 0.01 Ta=25°C 2.0mA Ta=25℃ VCE=3V Ta=100℃ 25℃ -40℃ 0.6mA 0.4mA 0.05 DC CURRENT GAIN : hFE COLLECTOR CURRENT：Ic(A) 10 200 VCE=3V 1V 100 50 0.2mA 0 0.001 0 0.5 1 0 1.5 20 IB=0mA 0.5 1 1.5 2 5 10 20 50 100 200 500 1A 2A COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE：VCE(V） DC CURRENT GAIN：hFE VCE=3V 100 Ta=100℃ 25℃ -40℃ 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT：Ic(A) Fig.4 DC Current Gain vs. Collector Current (Ⅱ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 Fig.3 DC current gain vs. collector current ( Ι ) Fig.2 Ground Emitter Output Caracteristics Fig.1 Grounded Emitter Propagation Characteristics Ta=25°C 500 200 100 IC/IB=50 50 20 20 5 10 10 20 50 100 200 500 1A 2A COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current (Ι) COLLECTOR SATURATION VOLTAGE ：VCE(sat)(V) BASE TO EMITTER VOLTAGE：VBE(V) 1 IC/IB=10 Ta=100℃ 25℃ -40℃ 0.1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT：Ic(A) Fig.6 Collector-Enitter Saturation Voltage vs. Collector Current (Ⅱ) Rev.A 2/3 MP6X2 Ta=25°C 1 IC/IB=10 0.5 0.2 0.1 5 10 20 50 100 200 500 1A 2A 1000 Ta=25°C VCE=5V 500 200 100 50 20 −1 −2 COLLECTOR CURRENT : IC (mA) −5 −10 −20 −50 −100−200 −500 −1A EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current Fig.8 Transition frequency vs. emitter current 10 Ta=25°C f=1MHz IE=0A IC=0A 500 Cib 200 100 Cob 50 20 10 0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 10 Ta=25℃ COLLECTOR CURRENT : IC (A) Normalized Transient Thermal Resistance : r(t) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 2 TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat) (V) Transistors 1 0.1 0.01 0.001 100ms 10ms 1ms 1 DC 0.1 Ta=25℃ Single Pulse 0.01 0.1 10 1000 Pulse width : Pw(s) Fig.10 Normalized thermal resistance (Element) 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Safe operating area Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0