Diotec BSS63 Surface mount si-epitaxial planartransistor Datasheet

BSS 63
Switching Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
1.3 ±0.1
2.5 max
3
Type
Code
2
1
250 mW
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
PNP
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BSS 63
Collector-Emitter-voltage
B open
- VCE0
100 V
Collector-Base-voltage
E open
- VCB0
110 V
Emitter-Base-voltage
C open
- VEB0
6V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
100 mA
Peak Base current – Basis-Spitzenstrom
- IBM
100 mA
Junction temp. – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 90 V
- ICB0
–
–
100 nA
IE = 0, - VCB = 90 V, Tj = 150/C
- ICB0
–
–
50 :A
- IEB0
–
–
100 nA
–
–
250 mV
–
–
900 mV
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 6 V
1
Collector saturation volt. – Kollektor-Sättigungsspg. )
- IC = 25 mA, - IB = 2.5 mA
- VCEsat
1
Base saturation voltage – Basis-Sättigungsspannung )
- IC = 25 mA, - IB = 2.5 mA
1
- VBEsat
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
14
01.11.2003
Switching Transistors
BSS 63
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 1 V, - IC = 10 mA
hFE
30
–
–
- VCE = 1 V, - IC = 25 mA
hFE
30
–
–
fT
50 MHz
85 MHz
–
–
3 pF
–
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 25 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
CCB0
420 K/W 2)
RthA
BSS 64
BSS 63 = BM
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
15
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