Fairchild FOD817B 4-pin phototransistor optocoupler Datasheet

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
DESCRIPTION
The FOD817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
4
• Applicable to Pb-free IR reflow soldering
• Compact 4-pin package
• Current transfer ratio in selected groups:
FOD817:
50-600%
FOD817A:
80-160%
FOD817B:
130-260%
FOD817C:
200-400%
FOD817D:
300-600%
1
FUNCTIONAL BLOCK DIAGRAM
• C-UL, UL and VDE approved
• High input-output isolation voltage of 5000 Vrms
ANODE 1
4 COLLECTOR
APPLICATIONS
CATHODE 2
FOD817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
3 EMITTER
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified.)
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
EMITTER
Continuous Forward Current
Reverse Voltage
LED Power Dissipation
Derate above 25°C
Value
Units
TSTG
TOPR
TSOL
PD
-55 to +125
-30 to +100
260 for 10 sec
200
°C
°C
°C
mW
IF
VR
50
6
70
0.93
mA
V
mW
mW/°C
70
6
50
150
2.0
V
V
mA
mW
mW/°C
PD
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
VCEO
VECO
IC
Detector Power Dissipation
Derate above 25°C
© 2004 Fairchild Semiconductor Corporation
Symbol
PD
Page 1 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
EMITTER
Input Forward Voltage
Reverse Leakage Current
Terminal Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Symbol
Min
Typ*
Max
Unit
(IF = 20 mA)
VF
—
1.2
1.4
V
(VR = 4.0 V)
(V = 0, f = 1 kHz)
IR
Ct
—
–
—
30
10
250
µA
pF
(IC = 0.1 mA, IF = 0)
(IE = 10 µA, IF = 0)
(VCE = 20 V, IF = 0)
BVCEO
BVECO
ICEO
70
6
—
—
–
–
—
–
100
V
V
nA
*Typical values at TA = 25°C.
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Current Transfer Ratio
Symbol
(IF = 5 mA, VCE = 5 V) (note 1)
Collector-Emitter
Saturation Voltage
CTR
Device
Min
Typ*
Max
Unit
FOD817
50
—
600
%
FOD817A
80
—
160
%
FOD817B
130
—
260
%
FOD817C
200
—
400
%
FOD817D
300
—
600
%
(IF = 20 mA, IC = 1 mA)
VCE (SAT)
—
0.1
0.2
V
Rise Time
(IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2)
tr
—
4
18
µs
Fall Time
(IC = 2 mA, VCE = 2 V, RL = 100Ω) (note 2)
tf
—
3
18
µs
AC Characteristic
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
Test Conditions
Symbol
Min
f = 60Hz, t = 1 min
VISO
5000
(VI-O = 500 VDC)
RISO
(VI-O = 0, f = 1 MHz)
CISO
5x
1010
Typ*
Max
Units
Vac(rms)
1011
0.6
Ω
1.0
pf
*Typical values at TA = 25°C.
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
© 2004 Fairchild Semiconductor Corporation
Page 2 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Typical Electrical/Optical Characteristic Curves (TA = 25°C Unless otherwise specified.)
COLLECTOR POWER DISSIPATION PC (mW)
Fig. 1 Forward Current
vs. Ambient Temperature
FORWARD CURRENT IF (mA)
60
50
40
30
20
10
0
-30
0
25
50
70
100 125
AMBIENT TEMPERATURE TA (°C)
Fig. 3 Collector-Emitted Saturation Voltage
vs. Forward Current
150
100
50
0
-30
0
25
50
70
100 125
AMBIENT TEMPERATURE TA (°C)
Ta = 25°C
FORWARD CURRENT IF (mA)
5m A
5
7m A
1m A
500
3m A
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
200
Fig. 4 Forward Current vs. Forward Voltage
6
4
3
2
1
Ta =75°C
50°C
200
25°C
0°C
-25°C
100
50
20
10
5
2
1
0
0
5
10
0
15
1.0
1.5
2.0
2.5
3.0
FORWARD VOLTAGE VF (V)
Fig. 5 Current Transfer Ratio
vs. Forward Current
Fig. 6 Collector Current
vs. Collector-Emitter Voltage
200
30
VCE = 5V
Ta = 25°C
180
160
140
120
100
80
60
40
20
0
0.5
FORWARD CURRENT IF (mA)
COLLECTOR CURRENT IC (mA)
CURRENT TRANSFER RATIO CTR ( %)
Fig. 2 Collector Power Dissipation
vs. Ambient Temperature
1
2
5
10
20
Ta = 25°C
20mA
Pc(MAX.)
20
15
10mA
10
5m A
5
0
50
FORWARD CURRENT IF (mA)
© 2004 Fairchild Semiconductor Corporation
I IF = 30mA
25
0
1
2
3
4
5
6
7
8
9
COLLECTOR-EMITTER VOLTAGE VCE (V)
Page 3 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Typical Electrical/Optical Characteristic Curves (TA = 25°C Unless otherwise specified.)
Fig. 8 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 7. Relative Current Transfer Ratio
vs. Ambient Temperature
IF = 5mA
VCE = 5V
100
50
0
-30
0.16
IF = 20mA
IC = 1mA
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-25
0
25
50
75
100
AMBIENT TEMPERATURE TA (°C)
0
25
50
75
100
AMBIENT TEMPERATURE TA (°C)
Fig. 9 Collector Dark Current
vs. Ambient Temperature
Fig. 10. Response Time
vs. Load Resistance
10-5
500
VCE = 20V
10-6
RESPONSE TIME (µs)
COLLECTOR DARK CURRENT ICEO (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
RELATIVE CURRENT TRANSFER
RATIO (%)
150
10-7
10-8
10-9
10-10
VCE = 2V
200 IC = 2mA
Ta = 25°C
100
50
tr
20
tf
10
td
5
ts
2
1
0.5
10-11
-25
0.1 0.2
0.5
1
2
5
10
LOAD RESISTANCE RL (kΩ)
Test Circuit for Response Time
Fig. 11. Frequency Response
VOLTAGE GAIN AV (dB)
0.2
0.05
0
25
50
75
100
AMBIENT TEMPERATURE TA (°C)
VCE = 2V
IC = 2mA
Ta = 25°C
0
10
RL=10kΩ 1kΩ 100Ω
20
0.5 1
Test Circuit for Frequency Response
2
5 10 20
50 100
500
FREQUENCY f (kHz)
© 2004 Fairchild Semiconductor Corporation
Page 4 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Package Dimensions (Through Hole)
Package Dimensions (Surface Mount)
SEATING PLANE
0.312 (7.92)
0.288 (7.32)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
0.200 (5.10)
0.161 (4.10)
SEATING PLANE
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.157 (4.00)
0.118 (3.00)
0.010 (0.26)
0.130 (3.30)
0.091 (2.30)
0.051 (1.30)
0.043 (1.10)
0.020 (0.51)
TYP
0.010 (0.26)
0.150 (3.80)
0.110 (2.80)
0.300 (7.62)
typ
0.110 (2.79)
0.090 (2.29)
SEATING PLANE
0.412 (10.46)
0.388 (9.86)
0.110 (2.79)
0.090 (2.29)
Lead Coplanarity 0.004 (0.10) MAX
Footprint Dimensions (Surface Mount)
0.312 (7.92)
0.288 (7.32)
0.157 (4.00)
0.118 (3.00)
1.5
0.276 (7.00)
0.236 (6.00)
1.3
0.291 (7.40)
0.252 (6.40)
0.130 (3.30)
0.091 (2.30)
0.110 (2.80)
0.011 (1.80)
0.150 (3.80)
0.110 (2.80)
0.024 (0.60)
0.016 (0.40)
0.024 (0.60)
0.004 (0.10)
0.024 (0.60)
0.016 (0.40)
Package Dimensions (0.4” Lead Spacing)
0.200 (5.10)
0.161 (4.10)
0.049 (1.25)
0.030 (0.76)
9
0.010 (0.26)
0.110 (2.79)
0.090 (2.29)
2.54
NOTE
All dimensions are in inches (millimeters)
© 2004 Fairchild Semiconductor Corporation
Page 5 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
ORDERING INFORMATION
Option
Order Entry Identifier
Description
S
.S
Surface Mount Lead Bend
SD
.SD
Surface Mount; Tape and reel
W
.W
0.4" Lead Spacing
300
.300
VDE 0884
300W
.300W
VDE 0884, 0.4" Lead Spacing
3S
.3S
VDE 0884, Surface Mount
3SD
.3SD
VDE 0884, Surface Mount, Tape & Reel
MARKING INFORMATION
4
5
V X ZZ Y
3
817
6
2
1
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
© 2004 Fairchild Semiconductor Corporation
Page 6 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Carrier Tape Specifications
P2
Ø1.55±0.05
P0
1.75±0.1
F
W
P1
0.3±0.05
NOTE
All dimensions are in millimeters
Description
Symbol
Dimensions in mm (inches)
Tape wide
W
16 ± 0.3 (.63)
Pitch of sprocket holes
P0
4 ± 0.1 (.15)
Distance of compartment
F
P2
7.5 ± 0.1 (.295)
2 ± 0.1 (.079)
Distance of compartment to compartment
P1
12 ± 0.1 (.472)
© 2004 Fairchild Semiconductor Corporation
Page 7 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
Lead Free recommended IR Reflow condition
Temperature (°C)
Tp
Tsmax
Ramp-down
Tsmin
25°C
Soldering zon
ts (Preheat)
Time (sec)
Profile Feature
Pb-Sn solder assembly
Lead Free assembly
Preheat condition
(Tsmin-Tsmax / ts)
100°C ~ 150°C
60 ~ 120 sec
150°C ~ 200°C
60 ~120 sec
Melt soldering zone
183°C
60 ~ 120 sec
217°C
30 ~ 90 sec
Peak temperature (Tp)
240 +0/-5°C
250 +0/-5°C
Ramp-down rate
6°C/sec max.
6°C/sec max.
Recommended Wave Soldering condition
Profile Feature
For all solder assembly
Peak temperature (Tp)
© 2004 Fairchild Semiconductor Corporation
Max 260°C for 10 sec
Page 8 of 9
8/19/04
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817 Series
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
© 2004 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Page 9 of 9
8/19/04
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